SI3443DVPBF [INFINEON]
Ultra Low On-Resistance; 超低导通电阻
| 型号： | SI3443DVPBF |
| 厂家： | 
Infineon |
| 描述： | Ultra Low On-Resistance |
| 文件： | 总7页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95240
Si3443DVPbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
A
1
2
6
D
D
D
VDSS = -20V
5
D
l Available in Tape & Reel
l -2.5V Rated
l Lead-Free
3
4
G
S
RDS(on) = 0.065Ω
Top View
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It'suniquethermaldesignandRDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
TSOP-6
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-20
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-4.4
-3.5
A
-20
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
2.0
W
Power Dissipation
1.3
Linear Derating Factor
0.016
31
W/°C
mJ
V
EAS
Single Pulse Avalanche Energy
Gate-to-Source Voltage
VGS
± 12
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
RθJA
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1
08/31/05
Si3443DVPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-20 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.005 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.034 0.065
––– 0.053 0.090
––– 0.060 0.100
-0.60 ––– -1.2
VGS = -4.5V, ID = -4.4A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS = -2.7V, ID = -3.7A
VGS = -2.5V, ID = -3.5A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -4.4 A
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
–––
12 –––
––– ––– -1.0
––– ––– -5.0
––– ––– -100
––– ––– 100
V
DS = -20V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 70°C
GS = -12V
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
IGSS
VGS = 12V
ID = -4.4A
Qg
–––
–––
–––
–––
–––
–––
–––
11
15
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.2 –––
2.9 –––
nC VDS = -10V
VGS = -4.5V
12
33
50
60
VDD = -10V, VGS = -4.5V
ID = -1.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
70 100
72 100
RG = 6.0 Ω
RD = 10 Ω,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1079 –––
––– 220 –––
––– 152 –––
Output Capacitance
VDS = -10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
-2.0
-20
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -1.7A, VGS = 0V
TJ = 25°C, IF = -1.7A
––– 51
––– 30
77
44
ns
nC
Qrr
di/dt = -100A/µs
Notes:
Surface mounted on FR-4 board, t ≤ 5sec.
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 6.8mH
RG = 25Ω, IAS = -3.0A.
2
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Si3443DVPbF
100
10
1
100
10
1
VGS
VGS
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
BOTTOM-1.50V
-1.50V
-1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
-5.6A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
10
J
1
V
= -15V
DS
V
=-4.5V
20µs PULSE WIDTH
GS
0.1
1.5
2.0
2.5
3.0 3.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
Si3443DVPbF
15
12
9
1600
I
D
=
-4.5A
V
= 0V,
f = 1MHz
gd , ds
GS
C
= C + C
C
SHORTED
iss
gs
C
= C
gd
rss
C
= C + C
ds
oss
gd
1200
800
400
0
V
=-10V
DS
C
iss
6
3
C
C
oss
rss
0
1
10
100
0
4
8
12
16
20
24
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
10us
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
1
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
2.0
0.1
0.0
0.1
0.1
0.4
0.8
1.2
1.6
2.4
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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Si3443DVPbF
5.0
4.0
3.0
2.0
1.0
0.0
80
60
40
20
0
I
D
TOP
-1.3A
-2.4A
BOTTOM -3.0A
25
50
75
100
125
150
25
50
75
100
125
150
°
°
Starting T , Junction Temperature ( C)
T , Case Temperature ( C)
J
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
Case Temperature
Vs. Drain Current
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
Si3443DVPbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
WE E K
YEAR
Y
W
DAT E CODE
Y = YEAR
W = WE E K
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
PART NUMBER
LOT
CODE
TOP
24
25
26
X
Y
Z
PART NUMBER CODE REFERENCE:
A = S I3443DV
B = IRF5800
C = IR F 5850
D = IRF5851
E = IRF5852
F = IRF5801
I = IRF5805
J = IRF5806
K = IRF5810
L = IRF5804
M = IRF5803
N = IRF5802
W = (27-52) IF PRECEDED BY A LETTER
WORK
YEAR
Y
WE E K
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
K
50
51
X
Y
Note: A li ne above the work week
(as shown here) indicates Lead-Free.
6
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Si3443DVPbF
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/05
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7
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