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SIDC06D60C8F1SA1 [INFINEON]

Rectifier Diode, 1 Phase, 1 Element, 20A, 600V V(RRM), Silicon, DIE-1;
SIDC06D60C8F1SA1
型号： SIDC06D60C8F1SA1
厂家： Infineon    Infineon
描述：

Rectifier Diode, 1 Phase, 1 Element, 20A, 600V V(RRM), Silicon, DIE-1

软恢复二极管 快速软恢复二极管
文件： 总4页 (文件大小：44K)
中文：  中文翻译
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SIDC06D60C8  
Fast switching diode chip in Emitter Controlled 3 -Technology  
A
This chip is used for:  
Features:  
•
•
Power module  
Discrete components  
•
600V Emitter Controlled 3 technology  
70 µm chip  
C
•
•
•
soft, fast switching  
low reverse recovery charge  
small temperature coefficient  
Applications:  
•
•
•
Drives  
White goods  
Resonant applications  
Chip Type  
VR  
IF  
Die Size  
Package  
2.34 x 2.42 mm2  
sawn on foil  
SIDC06D60C8  
600V 20A  
Mechanical Parameters  
Raster size  
2.34 x 2.42  
5.66  
mm2  
Area total  
Anode pad size  
Thickness  
1.91 x 1.99  
70  
µm  
Wafer size  
200  
mm  
Max. possible chips per wafer  
Passivation frontside  
Pad metal  
4923  
Photoimide  
3200 nm AlSiCu  
Ni Ag –system  
Backside metal  
Die bond  
suitable for epoxy and soft solder die bonding  
Electrically conductive glue or solder  
Wire bond  
Al, ≤500µm  
Reject ink dot size  
0.65mm; max 1.2mm  
Store in original container, in dry nitrogen, in dark  
environment, < 6 month at an ambient temperature of 23°C  
Recommended storage environment  
Edited by INFINEON Technologies, IMM PSD, L4017M, Edition 1.2, 08.07.10  
SIDC06D60C8  
Maximum Ratings  
Parameter  
Symbol  
Condition  
Value  
Unit  
Repetitive peak reverse voltage  
Continuous forward current  
VR RM  
IF  
IFR M  
Tvj  
Tvj = 25 °C  
Tvj < 150°C  
Tvj < 150°C  
600  
1 )  
V
A
Maximum repetitive forward current  
Junction temperature range  
40  
-40...+175  
-40...+150  
°C  
°C  
Operating junction temperature  
Tvj  
IFm ax = 40A, VR max = 600V,  
Tvj ≤ 150°C  
)
Dynamic ruggedness²  
Pm ax  
tbd  
kW  
1 ) depending on thermal properties of assembly  
2 ) not subject to production test - verified by design/characterisation  
Static Characteristics (tested on wafer), Tvj = 25 °C  
Value  
Parameter  
Symbol  
IR  
Conditions  
Unit  
min.  
typ.  
max.  
27  
Reverse leakage current  
VR =600V  
IR =0.25mA  
IF =20A  
µA  
V
Cathode-Anode  
breakdown Voltage  
VBR  
VF  
600  
Diode forward voltage  
1.25  
1.6  
1.95  
V
Further Electrical Characteristics  
Switching characteristics and thermal properties are depending strongly on module design and mounting  
technology and can therefore not be specified for a bare die.  
Edited by INFINEON Technologies, IMM PSD, L4017M, Edition 1.2, 08.07.10  
SIDC06D60C8  
Chip Drawing  
A
A: Anode pad  
Edited by INFINEON Technologies, IMM PSD, L4017M, Edition 1.2, 08.07.10  
SIDC06D60C8  
Description  
AQL 0,65 for visual inspection according to failure catalogue  
Electrostatic Discharge Sensitive Device according to MIL-STD 883  
Revision History  
Version  
Subjects (major changes since last revision)  
Date  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© 2010 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or  
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or  
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all  
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual  
property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the  
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies  
components may be used in life-support devices or systems only with the express written approval of  
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of  
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the human body or to support and/or maintain and  
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other  
persons may be endangered.  
Edited by INFINEON Technologies, IMM PSD, L4017M, Edition 1.2, 08.07.10  

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