SIDC81D120H8X1SA3 [INFINEON]

Rectifier Diode, 1 Phase, 1 Element, 150A, 1200V V(RRM), Silicon, DIE-1;


型号：	SIDC81D120H8X1SA3
厂家：	Infineon
描述：	Rectifier Diode, 1 Phase, 1 Element, 150A, 1200V V(RRM), Silicon, DIE-1
文件：	总4页 (文件大小：40K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SIDC81D120H8

Fast switching diode chip in Emitter Controlled -Technology

This chip is used for:

Features:

•

EUPEC power modules and

discrete devices

•

1200V Emitter Controlled technology

120 µm chip

soft, fast switching

low reverse recovery charge

small temperature coefficient

•

Applications:

SMPS, resonant applications,

•

drives

Chip Type

V_R

I_F

Die Size

Package

9 x 9 mm²

sawn on foil

SIDC81D120H8

1200V 150A

Mechanical Parameters

Raster size

9 x 9

mm²

Area total

8.046 x 8.046

120

Anode pad size

Thickness

µm

Wafer size

200

Max. possible chips per wafer

Passivation frontside

Pad metal

315

Photoimide

3200 nm AlSiCu

Ni Ag –system

Backside metal

Die bond

suitable for epoxy and soft solder die bonding

Electrically conductive glue or solder

Wire bond

Al, ≤500µm

Reject ink dot size

0.65mm ; max 1.2mm

Store in original container, in dry nitrogen, in dark

environment, < 6 month at an ambient temperature of 23°C

Recommended storage environment

Edited by INFINEON Technologies, IMM PSD, L4061C, Edition 1.2, 08.07.10

SIDC81D120H8

Maximum Ratings

Parameter

Symbol

Condition

Value

Unit

Repetitive peak reverse voltage

Continuous forward current

V_{R RM}

I_F

I_{FR M}

T_vj

T_vj= 25 °C

T_vj< 150°C

1200

1 )

Maximum repetitive forward current

Junction temperature range

300

-40...+175

-40...+150

°C

Operating junction temperature

T_vj

I_{Fm ax}= 300A, V_Rmax

1200V, T_vj≤ 150°C

)

Dynamic ruggedness²

P_{m ax}

tbd

^{1 )}depending on thermal properties of assembly

^{2 )}not subject to production test - verified by design/characterisation

Static Characteristics (tested on wafer), T_vj= 25 °C

Value

Parameter

Symbol

I_R

Conditions

Unit

min.

typ.

max.

Reverse leakage current

V_R=1200V

I_R=4mA

µA

Cathode-Anode

breakdown Voltage

V_BR

V_F

1200

1.3

Diode forward voltage

I_F=150A

1.6

2.0

Further Electrical Characteristics

Switching characteristics and thermal properties are depending strongly on module design and mounting

technology and can therefore not be specified for a bare die.

Edited by INFINEON Technologies, IMM PSD, L4061C, Edition 1.2, 08.07.10

SIDC81D120H8

Chip Drawing

A: Anode pad

Edited by INFINEON Technologies, IMM PSD, L4061C, Edition 1.2, 08.07.10

SIDC81D120H8

Description

AQL 0,65 for visual inspection according to failure catalogue

Electrostatic Discharge Sensitive Device according to MIL-STD 883

Revision History

Version

Subjects (major changes since last revision)

Date

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the

types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies

components may be used in life-support devices or systems only with the express written approval of

Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body or to support and/or maintain and

sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other

persons may be endangered.

Edited by INFINEON Technologies, IMM PSD, L4061C, Edition 1.2, 08.07.10

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