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SIGC06T60GSX1SA2 [INFINEON]

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 2.44 X 2.42 MM, DIE-2;

SIGC06T60GSX1SA2


元器件型号：	SIGC06T60GSX1SA2
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 2.44 X 2.42 MM, DIE-2 栅功率控制晶体管
PDF文件：	总4页 (文件大小：72K)
下载文档：	下载PDF数据表文档文件
型号参数：SIGC06T60GSX1SA2参数

SIGC06T65E

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC06T65GE

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC07T60NC

IGBT Chip in NPT-technology

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15 INFINEON

SIGC07T60SN

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, DIE-2

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0 INFINEON

SIGC07T60SNC

IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient

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6 INFINEON

SIGC07T60UN

High Speed IGBT Chip in NPT-technology positive temperature coefficient

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7 INFINEON

SIGC08T60

IGBT3 Chip

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10 INFINEON

SIGC08T60E

暂无描述

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0 INFINEON

SIGC08T60S

IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient

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4 INFINEON

SIGC08T60SE

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC08T65E

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC100T60R3

600V Trench & Field Stop technology positive temperature coefficient

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17 INFINEON

SIGC100T60R3

IGBT3 Chip

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21 INFINEON

SIGC100T60R3_10

600V Trench & Field Stop technology positive temperature coefficient

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12 INFINEON

SIGC101T170R3

IGBT3 Chip

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11 INFINEON

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