SIGC121T120R2CX1SA5 [INFINEON]

Insulated Gate Bipolar Transistor, 103A I(C), 1200V V(BR)CES, N-Channel, 11.08 X 11.08 MM, DIE-10;


型号：	SIGC121T120R2CX1SA5
厂家：	Infineon
描述：	Insulated Gate Bipolar Transistor, 103A I(C), 1200V V(BR)CES, N-Channel, 11.08 X 11.08 MM, DIE-10 栅功率控制晶体管
文件：	总5页 (文件大小：64K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SIGC121T120R2C

IGBT Chip in NPT-technology

Features:

This chip is used for:

power module

BSM 75GD120DN2



1200V NPT technology

low turn-off losses

short tail current

positive temperature coefficient

easy paralleling

integrated gate resistor



Applications:



drives

Chip Type

V_CE

I_C

Die Size

Package

SIGC121T120R2C 1200V 75A 11.08 X 11.08 mm²

sawn on foil

Mechanical Parameter

Raster size

11.08 X 11.08

8 x ( 2.99 x 1.97 )

1.46 x 0.8

122.8

Emitter pad size

Gate pad size

Area total

mm²

Thickness

200

µm

Wafer size

150

Max.possible chips per wafer

Passivation frontside

Pad metal

106

Photoimide

3200 nm AlSiCu

Ni Ag –system

suitable for epoxy and soft solder die bonding

Backside metal

Die bond

Electrically conductive glue or solder

Wire bond

Al, <500µm

Reject ink dot size

 0.65mm ; max 1.2mm

Store in original container, in dry nitrogen, in dark

environment, < 6 month at an ambient temperature of 23°C

Recommended storage environment

Edited by INFINEON Technologies, AIM PMD D CID CLS, L7171MM, Edition 2.1, 14.10.2008

SIGC121T120R2C

Maximum Ratings

Parameter

Symbol

V_{C E}

Value

Unit

1200

Collector-Emitter voltage, T_vj=25 C

DC collector current, limited by T_{vj max}

Pulsed collector current, t_plimited by T_{vj max}

Gate emitter voltage

1 )

I_C

I_{c, p ul s}

V_{G E}

225

20

Junction temperature range

T_vj

t_SC

-55 ... +175

-55...+150

°C

C

µs

Operating junction temperature

Short circuit data ^{2 )}V_GE= 15V, V_CC= 900V, T_vj= 150°C

I_{C, ma x}= 150A, V_{CE , m a x}= 1200V

T_vj 150°C

Reverse bias safe operating area ^{2 )}(RBSOA)

^{1 )}depending on thermal properties of assembly

^{2 )}not subject to production test - verified by design/characterization

Static Characteristic (tested on wafer), T_vj=25 C

Value

Parameter

Symbol

Conditions

Unit

min.

1200

2.0

typ.

max.

Collector-Emitter breakdown voltage

Collector-Emitter saturation voltage

Gate-Emitter threshold voltage

Zero gate voltage collector current

Gate-Emitter leakage current

Integrated gate resistor

V_(BR)CES

V_CEsat

V_GE(th)

I_CES

V_GE=0V , I_C= 4mA

V_GE=15V, I_C=75A

I_C=3mA , V_GE=V_CE

V_CE=1200V , V_GE=0V

V_CE=0V , V_GE=20V

2.5

5.5

3.0

6.5

9.2

480

4.5

µA



I_GES

r_G

Dynamic Characteristic (not subject to production test - verified by design / characterization),

T_vj=25 C

Value

Parameter

Symbol

Conditions

Unit

min. typ.

5100

max.

Input capacitance

C_{i es}

C_{oe s}

C_{re s}

V_{C E}=25V,

V_{G E}=0V,

f=1MHz

Output capacitance

720

380

Reverse transfer capacitance

Edited by INFINEON Technologies, AIM PMD D CID CLS, L7171MM, Edition 2.1, 14.10.2008

SIGC121T120R2C

Further Electrical Characteristic

Switching characteristics and thermal properties are depending strongly on module design and mounting

technology and can therefore not be specified for a bare die.

Edited by INFINEON Technologies, AIM PMD D CID CLS, L7171MM, Edition 2.1, 14.10.2008

SIGC121T120R2C

Chip Drawing

E = Emitter pad

G = Gate pad

T = Test pad do not contact

Edited by INFINEON Technologies, AIM PMD D CID CLS, L7171MM, Edition 2.1, 14.10.2008

SIGC121T120R2C

Description

AQL 0,65 for visual inspection according to failure catalogue

Electrostatic Discharge Sensitive Device according to MIL-STD 883

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the

types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies

components may be used in life-support devices or systems only with the express written approval of

Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body or to support and/or maintain and

sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other

persons may be endangered.

Edited by INFINEON Technologies, AIM PMD D CID CLS, L7171MM, Edition 2.1, 14.10.2008

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