SIGC12T60N [INFINEON]

Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, DIE-3;
SIGC12T60N
元器件型号: SIGC12T60N
生产厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用:

Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, DIE-3

晶体 晶体管 功率控制 双极性晶体管 栅
PDF文件: 总4页 (文件大小:69K)
下载文档:  下载PDF数据表文档文件
型号参数:SIGC12T60N参数

SIGC12T60NC

IGBT Chip in NPT-technology

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15 INFINEON

SIGC12T60SNC

IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient

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4 INFINEON

SIGC12T60SNCX1SA1

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 3.50 X 3.50 MM, DIE-2

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0 INFINEON

SIGC144T170C

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC144T170R2C

IGBT Chip in NPT-technology 1700V NPT technology 280 μm chip

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7 INFINEON

SIGC144T170R2C

IGBT Chip in NPT-technology

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9 INFINEON

SIGC144T170R2C_09

IGBT Chip in NPT-technology 1700V NPT technology 280 μm chip

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7 INFINEON

SIGC14T60N

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, DIE-2

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0 INFINEON

SIGC14T60NC

IGBT Chip in NPT-technology

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12 INFINEON

SIGC14T60SN

Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, DIE-2

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0 INFINEON

SIGC14T60SNC

IGBT Chip in NPT-technology 600V NPT technology 100μm chip short circuit prove

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10 INFINEON

SIGC14T60SNCX1SA4

Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, 3.80 X 3.80 MM, DIE-2

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0 INFINEON

SIGC156T120R2C

IGBT Chip in NPT-technology

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5 INFINEON

SIGC156T120R2C

IGBT Chip in NPT-technology

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8 INFINEON

SIGC156T120R2CL

IGBT Chip in NPT-technology

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6 INFINEON