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SIGC185T170R2C [INFINEON]

IGBT Chip in NPT-technology; IGBT芯片在NPT技术
SIGC185T170R2C
型号: SIGC185T170R2C
厂家: Infineon    Infineon
描述:

IGBT Chip in NPT-technology
IGBT芯片在NPT技术

双极性晶体管
文件: 总4页 (文件大小:71K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

SIGC185T170R2CX1SA3

Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel, 13.56 X 13.56 MM, DIE-10

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SIGC185T350R2CH

Insulated Gate Bipolar Transistor, 50A I(C), 3500V V(BR)CES, N-Channel, DIE

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SIGC186T170R3

IGBT3 Chip

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SIGC186T170R3E

Insulated Gate Bipolar Transistor

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SIGC186T170R3EX1SA4

Insulated Gate Bipolar Transistor,

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SIGC18T60NC

IGBT Chip in NPT-technology

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SIGC18T60SN

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, DIE-2

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SIGC18T60SNC

IGBT Chip in NPT-technology

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SIGC18T60UN

High Speed IGBT Chip in NPT-technology positive temperature coefficient

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SIGC20T120

IGBT3 Chip

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SIGC20T120E

Insulated Gate Bipolar Transistor

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SIGC20T120L

IGBT3 Chip

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SIGC20T120LE

TRENCHSTOPTM IGBT3 Chip

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SIGC20T120LE_15

TRENCHSTOPTM IGBT3 Chip

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SIGC223T120R2CL

IGBT Chip in NPT-technology

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SIGC223T120R2CS

IGBT Chip in NPT-technology

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SIGC25T120C

IGBT Chip in NPT-technology

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SIGC25T120CL

IGBT Chip in NPT-technology

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SIGC25T120CLUNSAWNX6SA1

Insulated Gate Bipolar Transistor,

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SIGC25T120CS

IGBT Chip in NPT-technology

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