SIGC39T60E [INFINEON]

Insulated Gate Bipolar Transistor,;
SIGC39T60E
元器件型号: SIGC39T60E
生产厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用:

Insulated Gate Bipolar Transistor,

晶体 晶体管 功率控制 双极性晶体管 栅
PDF文件: 总4页 (文件大小:79K)
下载文档:  下载PDF数据表文档文件
型号参数:SIGC39T60E参数

SIGC39T60S

IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient

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5 INFINEON

SIGC39T60X1SA1

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, 6.59 X 5.91 MM, DIE-3

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0 INFINEON

SIGC39T65E

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC40T60R3

IGBT3 Chip

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6 INFINEON

SIGC40T65R3E

Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel

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0 INFINEON

SIGC41T120R3

IGBT3 Chip

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5 INFINEON

SIGC41T120R3E

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC41T120R3L

IGBT3 Chip

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12 INFINEON

SIGC41T120R3LE

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC42T120C

IGBT Chip in NPT-technology

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20 INFINEON

SIGC42T120CL

IGBT Chip in NPT-technology

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16 INFINEON

SIGC42T120CLUNSAWNX6SA1

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC42T120CLX1SA6

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, 6.59 X 6.49 MM2, DIE-3

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0 INFINEON

SIGC42T120CQ

IGBT Chip in Fieldstop -technology

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2 INFINEON

SIGC42T120CS

IGBT Chip in NPT-technology

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8 INFINEON