SIGC57T170C [INFINEON]

Insulated Gate Bipolar Transistor;
SIGC57T170C
型号: SIGC57T170C
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Insulated Gate Bipolar Transistor

文件: 总5页 (文件大小:65K)
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SIGC61T60NC

IGBT Chip in NPT-technology

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16 INFINEON

SIGC68T170R3

IGBT3 Chip

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8 INFINEON

SIGC68T170R3E

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC68T170R3EX1SA3

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC6T120CS

Insulated Gate Bipolar Transistor, 2A I(C), 1200V V(BR)CES, N-Channel, DIE-2

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0 INFINEON

SIGC76T60R3

IGBT3 Chip

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17 INFINEON

SIGC81T120R2C

IGBT Chip in NPT-technology

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15 INFINEON

SIGC81T120R2CL

IGBT Chip in NPT-technology

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6 INFINEON

SIGC81T120R2CS

IGBT Chip in NPT-technology

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6 INFINEON

SIGC81T60NC

IGBT Chip in NPT-technology

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11 INFINEON

SIGC81T60NCX1SA4

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, 8.99 X 8.99 MM, DIE-10

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0 INFINEON

SIGC81T60SNC

IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient

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8 INFINEON

SIGC81T60SNC

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, 8.99 X 8.99 MM. DIE-10

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0 INFINEON

SIGC84T120R3

IGBT3 Chip

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13 INFINEON

SIGC84T120R3L

IGBT3 Chip

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16 INFINEON