SIGC84T120R3E [INFINEON]
TRENCHSTOP™ IGBT 结合独特 TRENCHSTOP™ 和场终止技术，为行业树立新标准。;
| 型号： | SIGC84T120R3E |
| 厂家： | 
Infineon |
| 描述： | TRENCHSTOP™ IGBT 结合独特 TRENCHSTOP™ 和场终止技术，为行业树立新标准。 双极性晶体管 |
| 文件： | 总9页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
TRENCHSTOPTM IGBT3 Chip
SIGC84T120R3E
Data Sheet
Industrial Power Control
SIGC84T120R3E
Table of Contents
Features and Applications...............................................................................................................................3
Mechanical Parameters....................................................................................................................................3
Maximum Ratings.............................................................................................................................................4
Static and Electrical Characteristics ..............................................................................................................4
Further Electrical Characteristics...................................................................................................................5
Chip Drawing.....................................................................................................................................................6
Revision History ...............................................................................................................................................7
Relevant Application Notes .............................................................................................................................7
Legal Disclaimer ...............................................................................................................................................8
L7677M, L7677T, L7677E
2
Rev. 2.5, 19.08.2015
SIGC84T120R3E
TRENCHSTOPTM IGBT3 Chip
Features:
Recommended for:
Power modules
1200V trench & field stop technology
Low turn-off losses
Short tail current
Positive temperature coefficient
Easy paralleling
Applications:
Drives
1
Chip Type
VCE
ICn
Die Size
9.13mm x 9.15mm
Package
SIGC84T120R3E
1200V
75A
Sawn on foil
Mechanical Parameters
Die size
9.13 x 9.15
Emitter pad size
Gate pad size
Area total
See chip drawing
1.319 x 0.820
83.54
mm2
Thickness
140
µm
Wafer size
200
mm
Maximum possible chips per wafer
Passivation frontside
Pad metal
306
Photoimide
3200nm AlSiCu
Ni Ag – system
To achieve a reliable solder connection it is strongly
recommended not to consume the Ni layer completely during
production process
Backside metal
Die bond
Electrically conductive epoxy glue and soft solder
Al, ≤500µm
Wire bond
Reject ink dot size
for original and
0.65mm; max. 1.2mm
Ambient atmosphere air, temperature 17°C – 25°C,
sealed MBB bags
<6 months
Storage environment
Acc. to IEC62258-3: atmosphere >99% Nitrogen or inert gas,
humidity <25%RH, temperature 17°C – 25°C, <6 months
for open MBB bags
1 Nominal collector current at TC=100°C for chip packaged in power modules, see application example cited on page 5.
L7677M, L7677T, L7677E
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Rev. 2.5, 19.08.2015
SIGC84T120R3E
Maximum Ratings
Parameter
Symbol
Value
Unit
VCE
IC
1200
V
A
Collector-emitter voltage, Tvj=25C
DC collector current, limited by Tvj max
2
-
225
3
Pulsed collector current, tp limited by Tvj max
Gate-emitter voltage
IC,puls
VGE
Tvj
A
V
20
Junction temperature range
-55 ... +175
-55 ... +150
10
°C
°C
µs
Operating junction temperature
Tvj
Short circuit data 3 / VGE=15V, VCC=900V, Tvj=125°C
tsc
4
Reverse bias safe operating area 3 (RBSOA)
IC,max=150A, VCE,max=1200V, Tvj125°C
Static Characteristics (tested on wafer), Tvj=25C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
V(BR)CES
VCEsat
VGE(th)
ICES
VGE=0V, IC=3mA
VGE=15V, IC=75A
IC=3mA, VGE=VCE
VCE=1200V, VGE=0V
VCE=0V, VGE=20V
1200
-
-
1.4
5.0
-
1.7
5.8
-
2.1
6.5
V
10.1
600
µA
nA
IGES
-
-
rG
10
Electrical Characteristics 3
Parameter
Value
typ.
Symbol
Conditions
Unit
min.
max.
VGE=15V, IC=75A,
Tvj=125C
Collector-emitter saturation voltage
VCEsat
-
2.0
-
V
VCE=25V,
VGE=0V, f=1MHz
Tvj=25C
Input capacitance
Cies
Cres
-
-
5345
242
-
-
pF
Reverse transfer capacitance
2 Depending on thermal properties of assembly.
3 Not subject to production test - verified by design/characterization.
4 Allowed number of short circuits: <1000; time between short circuits: >1s.
L7677M, L7677T, L7677E
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Rev. 2.5, 19.08.2015
SIGC84T120R3E
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
Application example
FP75R12KE3
Rev. 3.1
L7677M, L7677T, L7677E
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Rev. 2.5, 19.08.2015
SIGC84T120R3E
Chip Drawing
E
E
E
E
G
T
E
E
E
E
E = Emitter
G = Gate
T = Test pad do not contact
L7677M, L7677T, L7677E
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Rev. 2.5, 19.08.2015
SIGC84T120R3E
Bare Die Product Specifics
Test coverage at wafer level cannot cover all application conditions. Therefore it is recommended to test all
characteristics which are relevant for the application at package level, including RBSOA and SCSOA.
Description
AQL 0.65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Revision
Subjects (major changes since last revision)
Change wafer size to 200mm
Date
2.2
2.3
2.4
2.5
30.04.2010
02.07.2014
06.02.2015
19.08.2015
Additional basic types L7677M, L7677T, L7677E; new gate pad design
Minor changes, chip drawing
Update disclaimer
Relevant Application Notes
L7677M, L7677T, L7677E
7
Rev. 2.5, 19.08.2015
SIGC84T120R3E
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015.
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated
herein and/or any information regarding the application of the product, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-
infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations
stated in this document and any applicable legal requirements, norms and standards concerning customer’s
products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility
of customer’s technical departments to evaluate the suitability of the product for the intended application and
the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact
your nearest Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the
Automotive Electronics Council.
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any
applications where a failure of the product or any consequences of the use thereof can reasonably be
expected to result in personal injury.
L7677M, L7677T, L7677E
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Rev. 2.5, 19.08.2015
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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