SIPC05N60S5 [INFINEON]
Power Field-Effect Transistor, 3A I(D), 600V, 1.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3;
| 型号： | SIPC05N60S5 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 3A I(D), 600V, 1.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
SIPC05N60S5
Fast CoolMOSTM Power Transistor
FEATURES:
Applications:
·
·
·
·
·
New revolutionary high voltage technology
Ultra low gate charge
Worlbest RDS(on) per chip area
Ultra low effective capacitances
Improved noise immunity
·
SMPS, resonant applications
Chip Type
SIPC05N60S5
VDS
ID
Die Size
Package
Ordering Code
600V
3A
2.22 x 2.21 mm2
sawn on foil
tbd
MECHANICAL PARAMETER:
mm
Raster size
2.22 x 2.21
Source pad size
Gate pad size
1.40 x 1.79
0.48 x 0.51
4.91 / 2.82
175
Area total / active
Thickness
mm2
µm
Wafer size
150
mm
grd
Flat position
0
Max.possible chips per wafer
Passivation frontside
Emitter metallization
3069
Nitride
3200 nm Al Si 1%
1400 nm Ni Ag –system
Collector metallization
Die bond
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Wire bond (proposed)
Reject Ink Dot Size
Source: Al, £ 500µm; Gate: Al, £ 125µm
Æ 0.30mm
store in original container, in dry nitrogen,
< 6 month
Recommended Storage Environment
Edited by INFINEON technologies AI IP DD HV2, L 5313N, Edition 1, 09.10.00 12:42
Preliminary
SIPC05N60S5
MAXIMUM RATINGS:
Parameter
Symbol
VDS
Value
Unit
Drain-Source voltage
600
V
A
ID
DC drain current, limited by T
3
jmax
IDpuls
VGS
Pulsed drain current, tp limited by T
Gate source voltage
6
A
jmax
±20
V
Tj, Ts t g
Operating junction and storage temperature
-55 ... +150
°C
Reverse diode dv/dt
dv/ dt
6
KV/µs
ID=3A, VDS<VDSS, di/dt=100 A/µs, Tjmax=150°C
STATIC CHARACTERISTICS (tested on chip), T =25 °C, unless otherwise specified:
j
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Drain-source breakdown voltage
Gate-source on-state resistance
V(BR)DSS
RDS(on)
VGS=0V , ID = 0.25mA
VGS=10V, ID=2A
600
V
W
V
1.4
4.5
0.1
1.741)
Gate threshold voltage
VGS(th)
IDSS
ID=134µA , VGS=VDS
VDS=600V , VGS=0V
VDS=0V , VGS=25V
3.5
5.5
25
Zero gate voltage drain current
µA
nA
Gate-source leakage current
IGSS
100
1) this correlates to a max. RDS(on) -value of 1.4W at VGS=10V, ID=2A of this chip packaged in a TO220-package
ELECTRICAL CHARACTERISTICS (tested at component):
Value
Parameter
Symbol
Unit
Conditions
min. typ.
max.
Input capacitance
Ciss
Coss
Crss
VD S=25V,
VGS=0V,
f=1MHz
-
-
-
420
-
-
-
pF
Output capacitance
150
3.6
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Value
Parameter
Symbol Conditions
Unit
min. typ.
max.
Turn-on delay time
Rise time
td(on)
-
-
ns
35
Tj=25 ° C
tr
-
-
-
-
VD D =350V,
ID =3.2 A,
VGS=10V,
25
Turn-off delay time
Fall time
td( o f f )
tf
-
40
RG= 20 W
-
15
Edited by INFINEON technologies AI IP DD HV2, L 5313N, Edition 1, 09.10.00 12:42
Preliminary
SIPC05N60S5
CHIP DRAWING:
Edited by INFINEON technologies AI IP DD HV2, L 5313N, Edition 1, 09.10.00 12:42
Preliminary
SIPC05N60S5
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG i Gr.,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
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address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Edited by INFINEON technologies AI IP DD HV2, L 5313N, Edition 1, 09.10.00 12:42
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