SKB04N60_07 [INFINEON]
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode; 在NPT技术的快速IGBT具有柔软，快速恢复反并联二极管EMCON
| 型号： | SKB04N60_07 |
| 厂家： | 
Infineon |
| 描述： | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| 文件： | 总13页 (文件大小：1148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKB04N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
G
E
• Designed for frequency inverters for washing machines,
fans, pumps and vacuum cleaners
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-263-3-2
• Very soft, fast recovery anti-parallel EmCon diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat)
Tj
Marking Package
SKB04N60
600V
4A
2.3V
K04N60 PG-TO-263-3-2
150°C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
VCE
IC
600
V
A
9.4
4.9
19
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C
Diode forward current
ICpul s
-
IF
19
TC = 25°C
TC = 100°C
10
4
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
IFpul s
VG E
tSC
19
±20
10
V
Short circuit withstand time2
µs
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Pt ot
W
50
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
Tj , Tstg
Ts
-55...+150
245
°C
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 Oct. 07
SKB04N60
Thermal Resistance
Parameter
Symbol Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Rt hJC
Rt hJCD
Rt hJA
2.5
4.5
40
K/W
Diode thermal resistance,
junction – case
SMD version, device on PCB1)
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V( BR)CES
600
-
-
V
V
G E=0V, IC =500µA
Collector-emitter saturation voltage
VC E( sat ) VG E = 15V, IC =4A
Tj =25°C
1.7
-
2.0
2.3
2.4
2.8
Tj =150°C
Diode forward voltage
VF
VG E=0V, IF =4A
1.2
-
1.4
1.25
1.8
1.65
Tj =25°C
Tj =150°C
Gate-emitter threshold voltage
Zero gate voltage collector current
VG E(t h)
ICES
3
4
5
IC =200µA,VCE=VGE
VCE=600V,VGE=0V
µA
-
-
-
-
20
500
Tj =25°C
Tj =150°C
Gate-emitter leakage current
Transconductance
IGES
gfs
V
V
CE=0V,VG E=20V
CE=20V, IC =4A
-
-
100
-
nA
S
3.1
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
V
V
CE=25V,
G E=0V,
-
-
-
-
264
29
17
317
35
20
pF
f=1MHz
V
V
QGate
CC =480V, IC =4A
G E=15V
24
31
nC
nH
A
Internal emitter inductance
LE
-
-
7
-
-
measured 5mm (0.197 in.) from case
Short circuit collector current2)
IC( SC)
40
V
G E=15V,tSC≤10µs
VCC ≤ 600V,
Tj ≤ 150°C
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3 Oct. 07
SKB04N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Tj =25°C,
td(on)
tr
td(off)
tf
Eon
Eoff
Et s
-
-
-
-
-
-
-
22
15
237
26
18
284
84
0.081 mJ
0.079
0.160
ns
V
V
CC =400V,IC =4A,
G E=0/15V,
RG=67Ω,
1)
Lσ =180nH,
70
1)
Cσ =180pF
0.070
0.061
0.131
Energy losses include
“tail” and diode
reverse recovery.
trr
tS
tF
-
-
-
-
-
-
180
15
165
130
2.5
-
-
-
-
-
-
ns
Tj =25°C,
VR =200V, IF =4A,
diF/dt=200A/µs
Diode reverse recovery charge
Diode peak reverse recovery current Irrm
Qrr
nC
A
A/µs
Diode peak rate of fall of reverse
dirr /dt
180
recovery current during tb
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Tj =150°C
td(on)
tr
td(off)
tf
Eon
Eoff
Et s
-
-
-
-
-
-
-
22
16
264
26
19
317
125
0.132 mJ
0.144
0.277
ns
V
V
CC =400V,IC =4A,
G E=0/15V,
RG=67Ω,
1)
Lσ =180nH,
104
1)
Cσ =180pF
0.115
0.111
0.226
Energy losses include
“tail” and diode
reverse recovery.
trr
tS
tF
-
-
-
-
-
-
230
23
227
300
4
-
-
-
-
-
-
ns
Tj =150°C
VR =200V, IF =4A,
diF/dt=200A/µs
Diode reverse recovery charge
Diode peak reverse recovery current Irrm
Qrr
nC
A
A/µs
Diode peak rate of fall of reverse
dirr /dt
200
recovery current during tb
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Rev. 2.3 Oct. 07
SKB04N60
tp=2µs
15µs
Ic
0A
1A
20A
10A
0A
50µs
TC=80°C
200µs
1ms
DC
.1A
01A
TC=110°C
c
1V
10V
100V
1000V
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
Figure 2. Safe operating area
switching frequency
(D = 0, TC = 25°C, Tj ≤ 150°C)
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 67Ω)
60W
50W
40W
30W
20W
10W
0W
12A
10A
8A
6A
4A
2A
0A
25°C
50°C
75°C 100°C 125°C
25°C
50°C
75°C 100°C 125°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 150°C)
(VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2.3 Oct. 07
SKB04N60
15A
12A
9A
15A
12A
9A
VGE=20V
VGE=20V
15V
13V
11V
9V
7V
5V
15V
13V
11V
9V
7V
5V
6A
6A
3A
3A
0A
0A
0V
1V
2V
3V
4V
5V
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
Figure 6. Typical output characteristics
(Tj = 25°C)
(Tj = 150°C)
14A
4.0V
Tj=+25°C
12A
10A
8A
3.5V
3.0V
2.5V
2.0V
1.5V
1.0V
IC = 8A
IC = 4A
-55°C
+150°C
6A
4A
2A
0A
0V
2V
4V
6V
8V
10V
-50°C
0°C
50°C 100°C 150°C
VGE, GATE-EMITTER VOLTAGE
Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VCE = 10V)
(VGE = 15V)
5
Rev. 2.3 Oct. 07
SKB04N60
td(off)
td(off)
tf
100ns
100ns
tf
td(on)
td(on)
tr
8A
tr
200Ω
10ns
0A
10ns
0Ω
2A
4A
6A
10A
50Ω
100Ω
150Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
(inductive load, Tj = 150°C, VCE = 400V,
V
GE = 0/+15V, IC = 4A,
V
GE = 0/+15V, RG = 67Ω,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
td(off)
100ns
tf
max.
typ.
td(on)
tr
min.
10ns
0°C
50°C
100°C
150°C
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 4A, RG = 67Ω,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.2mA)
Dynamic test circuit in Figure E)
6
Rev. 2.3 Oct. 07
SKB04N60
0.6mJ
0.5mJ
0.4mJ
0.3mJ
0.2mJ
0.1mJ
0.0mJ
0.4mJ
0.3mJ
0.2mJ
0.1mJ
0.0mJ
*) Eon and Ets include losses
*) Eon and Ets include losses
due to diode recovery.
due to diode recovery.
Ets*
Ets*
Eon
Eoff
*
Eoff
Eon
*
0A
2A
4A
6A
8A
10A
0Ω
50Ω
100Ω
150Ω
200Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
(inductive load, Tj = 150°C, VCE = 400V,
V
GE = 0/+15V, IC = 4A,
V
GE = 0/+15V, RG = 67Ω,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
0.3mJ
*) Eon and Ets include losses
due to diode recovery.
0.2mJ
Ets*
0.1mJ
Eon
*
Eoff
0.0mJ
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 4A, RG = 67Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.3 Oct. 07
SKB04N60
25V
20V
15V
10V
5V
Ciss
100pF
120V
480V
Coss
Crss
10pF
0V
0nC
10nC
20nC
30nC
0V
10V
20V
30V
QGE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical gate charge
Figure 17. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
(IC = 4A)
25µs
70A
60A
50A
40A
30A
20A
10A
0A
20µs
15µs
10µs
5µs
0µs
10V
11V
12V
13V
14V
15V
10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
VGE, GATE-EMITTER VOLTAGE
Figure 18. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
Figure 19. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ≤ 600V, Tj = 150°C)
8
Rev. 2.3 Oct. 07
SKB04N60
500ns
400ns
300ns
200ns
100ns
0ns
560nC
480nC
400nC
320nC
240nC
160nC
80nC
IF = 8A
IF = 8A
IF = 4A
IF = 4A
IF = 2A
IF = 2A
0nC
40A/µs
120A/µs 200A/µs 280A/µs 360A/µs
40A/µs
120A/µs 200A/µs 280A/µs 360A/µs
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 20. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125°C,
Figure 21. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
400A/µs
320A/µs
240A/µs
160A/µs
80A/µs
0A/µs
8A
6A
IF = 8A
4A
IF = 4A
IF = 2A
2A
0A
40A/µs
120A/µs 200A/µs 280A/µs 360A/µs
diF/dt, DIODE CURRENT SLOPE
40A/µs
120A/µs
200A/µs
280A/µs
360A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Figure 23. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
Dynamic test circuit in Figure E)
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
9
Rev. 2.3 Oct. 07
SKB04N60
8A
6A
4A
2A
2.0V
1.5V
1.0V
IF = 8A
IF = 4A
150°C
100°C
25°C
-55°C
0A
0.0V
0.5V
1.0V
1.5V
2.0V
-40°C 0°C
40°C 80°C 120°C
VF, FORWARD VOLTAGE
Tj, JUNCTION TEMPERATURE
Figure 24. Typical diode forward current as
a function of forward voltage
Figure 25. Typical diode forward voltage as
a function of junction temperature
D=0.5
D=0.5
100K/W
0.2
0.2
0.1
100K/W
0.1
0.05
10-1K/W
0.05
0.02
R , ( K / W )
0.128
τ , ( s )
R , ( K / W )
0.815
τ , ( s )
0.085
0.02
0.0407
0.01
5.24*10-3
4.97*10-4
4.31*10-5
R2
0.387
7.30*10-3
4.69*10-3
7.34*10-4
5.96*10-5
0.698
0.346
10-1K/W
10-2K/W
0.941
1.360
0.01
single pulse
0.046
10-2K/W
10-3K/W
2.280
R1
R1
R2
C1=τ1/R1 C2=τ2/R2
single pulse
C1=τ1/R1 C2=τ2/R2
1µs
10µs 100µs 1ms 10ms 100ms
1s
1µs
10µs 100µs 1ms 10ms 100ms 1s
tp, PULSE WIDTH
tp, PULSE WIDTH
Figure 26. Diode transient thermal
impedance as a function of pulse width
(D = tp / T)
Figure 28. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
10
Rev. 2.3 Oct. 07
SKB04N60
PG-TO263-3-2
11
Rev. 2.3 Oct. 07
SKB04N60
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
tF
t
QS
10% Ir r m
QF
Ir r m
dir r /dt
VR
90% Ir r m
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r 2
τn
r1
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
and Stray capacity Cσ =180pF.
Figure B. Definition of switching losses
12
Rev. 2.3 Oct. 07
SKB04N60
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/5/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
13
Rev. 2.3 Oct. 07
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