SKB06N60HS [INFINEON]

High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation; 高速IGBT在NPT技术下的Eoff 30 %,相比上一代
SKB06N60HS
型号: SKB06N60HS
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
高速IGBT在NPT技术下的Eoff 30 %,相比上一代

双极性晶体管
文件: 总14页 (文件大小:1189K)
下载:  下载PDF数据表文档文件

SKB06N60HS_07

High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

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9 INFINEON

SKB06N60HSATMA1

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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0 INFINEON

SKB1.2/01

Bridge Rectifier Diode, 1 Phase, 1.2A, 100V V(RRM), Silicon, PLASTIC, CASE G1, 4 PIN

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0 SEMIKRON

SKB1.2/02

Bridge Rectifier Diode, 1 Phase, 1.2A, 200V V(RRM), Silicon, PLASTIC, CASE G1, 4 PIN

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0 SEMIKRON

SKB1.2/04

Bridge Rectifier Diode, 1 Phase, 1.2A, 400V V(RRM), Silicon, PLASTIC, CASE G1, 4 PIN

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0 SEMIKRON

SKB1.2/08

Bridge Rectifier Diode, 1 Phase, 1.2A, 800V V(RRM), Silicon, PLASTIC, CASE G1, 4 PIN

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0 SEMIKRON

SKB1.2/12

Bridge Rectifier Diode, 1 Phase, 1.2A, 1200V V(RRM), Silicon, PLASTIC, CASE G1, 4 PIN

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0 SEMIKRON

SKB1.2XX

Miniature Bridge Rectifiers

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20 SEMIKRON

SKB1.5/08

Bridge Rectifier Diode, 1.5A, 800V V(RRM),

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0 SEMIKRON

SKB1.5/10

Bridge Rectifier Diode, 1.5A, 1000V V(RRM),

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0 SEMIKRON

SKB1.5XX

Miniature Bridge Rectifiers

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23 SEMIKRON

SKB1/08

Bridge Rectifier Diode, 1A, 800V V(RRM),

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0 SEMIKRON

SKB101

Miniature Bridge Rectifiers

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28 SEMIKRON

SKB101

Miniature Bridge Rectifiers

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28 SEMIKRON

SKB102

Miniature Bridge Rectifiers

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14 SEMIKRON