SKP02N60XKSA1 [INFINEON]

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN;


型号：	SKP02N60XKSA1
厂家：	Infineon
描述：	Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN 局域网栅瞄准线功率控制晶体管
文件：	总13页 (文件大小：468K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SKP02N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled

Diode

 75% lower E_offcompared to previous generation

combined with low conduction losses

 Short circuit withstand time – 10 s

 Designed for:

- Motor controls

- Inverter

 NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

PG-TO-220-3-1

(TO-220AB)

 Very soft, fast recovery anti-parallel Emitter Controlled

Diode

 Pb-free lead plating; RoHS compliant

 Qualified according to JEDEC¹for target applications

 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_CE(sat)

T_j

Marking Package

SKP02N60

600V

2.2V

K06N60 PG-TO-220-3-1

150C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25C

V_{C E}

I_C

600

6.0

2.9

T_C= 100C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

V_CE 600V, T_j 150C

Diode forward current

I_{Cp ul s}

I_F

6.0

2.9

T_C= 25C

T_C= 100C

Diode pulsed current, t_plimited by T_jmax

I_{Fp ul s}

V_{G E}

t_SC

20

Gate-emitter voltage

Short circuit withstand time²

V_GE= 15V, V_CC 600V, T_j 150C

Power dissipation

s

P_{t ot}

T_C= 25C

Operating junction and storage temperature

Soldering temperature

T_j, T_stg

-55...+150

260

C

T_s

°C

wavesoldering, 1.6 mm (0.063 in.) from case for 10s

¹J-STD-020 and JESD-022

²Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.3 12.06.2013

SKP02N60

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

R_{t hJC}

R_{t hJC D}

R_{t hJA}

4.2

K/W

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

PG-TO-220-3-1

Electrical Characteristic, at T_j= 25 C, unless otherwise specified

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{( BR )C ES}

600

V_{G E}=0V, I_C=500A

Collector-emitter saturation voltage

V_{C E( sat )}V_{G E}= 15V, I_C=2A

T_j=25C

1.7

1.9

2.2

2.4

2.7

T_j=150C

Diode forward voltage

V_F

V_{G E}=0V, I_F=2.9A

T_j=25C

1.2

1.4

1.8

1.25

1.65

T_j=150C

Gate-emitter threshold voltage

V_{G E( t h)}

I_{CE S}

I_C=150A,V_{C E}=V_GE

V_{C E}=600V,V_GE=0V

T_j=25C

Zero gate voltage collector current

A

250

T_j=150C

Gate-emitter leakage current

Transconductance

I_{GE S}

g_fs

V_{C E}=0V,V_{G E}=20V

V_{C E}=20V, I_C=2A

100

1.6

Dynamic Characteristic

Input capacitance

C_{i ss}

V_{C E}=25V,

V_{G E}=0V,

f=1MHz

142

170

Output capacitance

C_{os s}

C_{rs s}

Reverse transfer capacitance

Gate charge

Q_{Gat e}

V_{C C}=480V, I_C=2A

V_{G E}=15V

Internal emitter inductance

L_E

measured 5mm (0.197 in.) from case

Short circuit collector current²⁾

I_{C( SC )}

V_{G E}=15V,t_SC10s

V_{C C} 600V,

T_j 150C

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.3 12.06.2013

SKP02N60

Switching Characteristic, Inductive Load, at T_j=25 C

Value

Unit

Parameter

Symbol

Conditions

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

t_{d( o n)}

t_r

t_{d( of f)}

t_f

T_j=25C,

V_{C C}=400V,I_C=2A,

V_{G E}=0/15V,

Turn-off delay time

Fall time

259

311

R_G=118,

1 )

L_=180nH,

C_=180pF

Turn-on energy

E_{o n}

E_{o ff}

E_{t s}

0.036

0.028

0.064

0.041 mJ

0.036

Energy losses include

“tail” and diode

reverse recovery.

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

0.078

t_rr

t_S

130

T_j=25C,

V_R=200V, I_F=2.9A,

di_F/dt=200A/s

t_F

118

Diode reverse recovery charge

Q_rr

Diode peak reverse recovery current I_{rr m}

1.9

180

Diode peak rate of fall of reverse

recovery current during t_b

di_rr/dt

A/s

Switching Characteristic, Inductive Load, at T_j=150 C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

T_j=150C

V_{C C}=400V,

I_C=2A,

t_{d( o n)}

t_r

t_{d( of f)}

t_f

Turn-off delay time

Fall time

287

344

V_{G E}=0/15V,

R_G=118,

1 )

L_=180nH,

Turn-on energy

Turn-off energy

Total switching energy

E_{o n}

E_{o ff}

E_{t s}

0.054

0.043

0.097

0.062 mJ

0.056

C_=180pF

Energy losses include

“tail” and diode

reverse recovery.

0.118

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t_rr

t_S

150

T_j=150C

V_R=200V, I_F=2.9A,

di_F/dt=200A/s

t_F

131

150

3.8

200

Diode reverse recovery charge

Q_rr

Diode peak reverse recovery current I_{rr m}

Diode peak rate of fall of reverse

recovery current during t_b

di_rr/dt

A/s

¹⁾Leakage inductance L_and Stray capacity C_due to dynamic test circuit in Figure E.

Rev. 2.3 12.06.2013

SKP02N60

16A

14A

12A

10A

I_c

t_p=2s

10A

15s

50s

200s

T_C=80°C

0.1A

0.01A

T_C=110°C

1ms

I_c

10Hz

10V

100V

1000V

100Hz

1kHz

10kHz 100kHz

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

Figure 2. Safe operating area

(D = 0, T_C= 25C, T_j 150C)

(T_j 150C, D = 0.5, V_CE= 400V,

V_GE= 0/+15V, R_G= 118)

35W

30W

25W

20W

15W

10W

25°C

50°C

75°C 100°C 125°C

50°C

75°C 100°C 125°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation (IGBT) as a

function of case temperature

(T_j 150C)

Figure 4. Collector current as a function of

case temperature

(V_GE 15V, T_j 150C)

Rev. 2.3 12.06.2013

SKP02N60

V_GE=20V

15V

13V

11V

V_GE=20V

15V

13V

11V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics

Figure 6. Typical output characteristics

(T_j= 25C)

(T_j= 150C)

4.0V

T_j=+25°C

3.5V

-55°C

+150°C

I_C= 4A

3.0V

2.5V

I_C= 2A

2.0V

1.5V

1.0V

10V

-50°C

0°C

50°C 100°C 150°C

V_GE, GATE-EMITTER VOLTAGE

T_j, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics

Figure 8. Typical collector-emitter

(V_CE= 10V)

saturation voltage as a function of junction

temperature

(V_GE= 15V)

Rev. 2.3 12.06.2013

SKP02N60

t_d(off)

t_f

100ns

t_d(on)

t_r

10ns

0

100

200

300

400

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_j= 150C, V_CE= 400V,

V_GE= 0/+15V, R_G= 118,

Dynamic test circuit in Figure E)

(inductive load, T_j= 150C, V_CE= 400V,

V_GE= 0/+15V, I_C= 2A,

Dynamic test circuit in Figure E)

5.5V

5.0V

4.5V

4.0V

t_d(off)

100ns

max.

t_f

3.5V

3.0V

2.5V

2.0V

t_d(on)

typ.

min.

t_r

10ns

0°C

50°C

100°C

150°C

-50°C

0°C

50°C 100°C 150°C

T_j, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, V_CE= 400V, V_GE= 0/+15V,

I_C= 2A, R_G= 118,

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(I_C= 0.15mA)

Dynamic test circuit in Figure E)

Rev. 2.3 12.06.2013

SKP02N60

0.2mJ

*) E_onand E_tsinclude losses

due to diode recovery.

0.2mJ

0.1mJ

0.0mJ

E_ts*

0.1mJ

E_on

E_off

0.0mJ

0

100

200

300

400

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, T_j= 150C, V_CE= 400V,

V_GE= 0/+15V, R_G= 118,

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_j= 150C, V_CE= 400V,

V_GE= 0/+15V, I_C= 2A,

Dynamic test circuit in Figure E)

0.2mJ

*) E_onand E_tsinclude losses

due to diode recovery.

D=0.5

0.2

10⁰K/W

E_ts*

0.1

0.05

E_on

0.1mJ

0.02

R , ( K / W )

1.026

1.3

1.69

0.183

 , ( s )  

10^-1K/W

0.035

3.62*10^-3

4.02*10^-4

4.21*10^-5

0.01

E_off

R₁

R₂

10^-2K/W

single pulse

C₁=₁/R₁C₂=₂/R₂

0.0mJ

0°C

50°C

100°C

150°C

1µs

10µs 100µs 1ms 10ms 100ms 1s

t_p, PULSE WIDTH

T_j, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, V_CE= 400V, V_GE= 0/+15V,

I_C= 2A, R_G= 118,

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = t_p/ T)

Dynamic test circuit in Figure E)

Rev. 2.3 12.06.2013

SKP02N60

25V

20V

15V

10V

C_iss

100pF

120V

480V

C_oss

10pF

C_rss

0nC

5nC

10nC

15nC

10V

20V

30V

Q_GE, GATE CHARGE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(I_C= 2A)

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(V_GE= 0V, f = 1MHz)

25s

40A

30A

20A

10A

20s

15s

10s

5s

0s

10V

11V

12V

13V

14V

15V

10V

12V

14V

16V

18V

20V

V_GE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE= 600V, start at T_j= 25C)

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(V_CE 600V,T_j= 150C)

Rev. 2.3 12.06.2013

SKP02N60

500ns

400ns

300ns

200ns

100ns

0ns

280nC

240nC

200nC

160nC

120nC

80nC

I_F= 4A

I_F= 2A

I_F= 1A

I_F= 2A

I_F= 1A

40nC

0nC

20A/s 60A/s 100A/s 140A/s 180A/s

di_F/dt, DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(V_R= 200V, T_j= 125C,

di_F/dt, DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery charge

as a function of diode current slope

(V_R= 200V, T_j= 125C,

Dynamic test circuit in Figure E)

250A/s

200A/s

150A/s

100A/s

50A/s

0A/s

I_F= 4A

I_F= 2A

I_F= 1A

20A/s

60A/s

100A/s 140A/s 180A/s

20A/s

60A/s

100A/s

140A/s

180A/s

di_F/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current slope

(V_R= 200V, T_j= 125C,

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a function of

diode current slope

(V_R= 200V, T_j= 125C,

Dynamic test circuit in Figure E)

Rev. 2.3 12.06.2013

SKP02N60

2.5V

2.0V

1.5V

1.0V

I_F= 4A

I_F= 2A

150°C

100°C

25°C

-55°C

0.0V

0.5V

1.0V

1.5V

2.0V

-40°C 0°C

40°C 80°C 120°C

V_F, FORWARD VOLTAGE

T_j, JUNCTION TEMPERATURE

Figure 25. Typical diode forward current as

a function of forward voltage

Figure 26. Typical diode forward voltage as

a function of junction temperature

10¹K/W

D=0.5

0.2

10⁰K/W

0.1

0.05

R , ( K / W )

0.830

2.240

 , ( s )  

6.40*10^-3

8.79*10^-4

1.19*10^-4

0.02

0.01

3.930

10^-1K/W

R₁

R₂

single pulse

C₁=₁/R₁C₂=₂/R₂

10^-2K/W

1µs

10µs 100µs 1ms 10ms 100ms

t_p, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse width

(D = t_p/ T)

Rev. 2.3 12.06.2013

SKP02N60

Rev. 2.3 12.06.2013

SKP02N60

i,v

=t +t

S F

di /dt

r r

=Q +Q

r r

10% I

r r m

di /dt

r r

r r m

90% I

Figure C. Definition of diodes

switching characteristics

₁

₂

_n

r₁

r ₂

r _n

T (t)

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Leakage inductance L_=180nH

and Stray capacity C_=180pF.

Figure B. Definition of switching losses

Rev. 2.3 12.06.2013

SKP02N60

Published by

Infineon Technologies AG

81726 Munich, Germany

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The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the

types in question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or

systems and/or automotive, aviation and aerospace applications or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the

failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be implanted in the

human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable

to assume that the health of the user or other persons may be endangered.

Rev. 2.3 12.06.2013

SKP02N60XKSA1 [INFINEON]

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