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SKW20N60HS [INFINEON]

High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation; 高速IGBT在NPT技术下的Eoff 30 ％，相比上一代

SKW20N60HS


元器件型号：	SKW20N60HS
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation 高速IGBT在NPT技术下的Eoff 30 ％，相比上一代双极性晶体管
PDF文件：	总14页 (文件大小：347K)
下载文档：	下载PDF数据表文档文件
型号参数：SKW20N60HS参数

SKW20N60HS_08

High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

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15 INFINEON

SKW20N60HSFKSA1

Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN

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0 INFINEON

SKW20N60HSXK

Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN

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0 INFINEON

SKW25N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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86 INFINEON

SKW25N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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233 INFINEON

SKW25N120_08

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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19 INFINEON

SKW30N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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32 INFINEON

SKW30N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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196 INFINEON

SKW30N60_08

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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25 INFINEON

SKW30N60HS

High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

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68 INFINEON

SKW30N60HS

HIGH SPEED IGBT IN NPT-TECHNOLOGY

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234 INFINEON

SKW30N60HS_08

High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

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46 INFINEON

SKW30N60HSFKSA1

Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN

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0 INFINEON

SKWD7000/02

Rectifier Diode, 1 Phase, 1 Element, 7000A, 200V V(RRM), Silicon,

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0 SEMIKRON

SKWT40/12

Silicon Controlled Rectifier

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1 SEMIKRON

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