Electronic Components Datasheet Search
English 中文版
Manufacturer Upload
Part Name:
 
Description:
MI-26K-IV  MI-26K-MW  MI-22O-MV  MI-26O-IV  MI-22X-IV  MI-22O-IY  MGDSI-10-I-E  MGDS-150-O-B-T  MHD2812S/883  MGDS-150-O-F/S  
SKW30N60HS_08 High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
Prototype PCB
Part No.:   SKW30N60HS_08
Download: Download   Right selection Save Target As
View Datasheet (Html)   No need to install PDF reader software
Description:   High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
File Size :   349 K    
Page : 14 Pages
Logo:   
Maker   INFINEON [ INFINEON TECHNOLOGIES AG ]http://www.infineon.com
Buy Now :   
  SKW30N60HS_08 Datasheet PDF page 2 SKW30N60HS_08 Datasheet PDF page 3 SKW30N60HS_08 Datasheet PDF page 4 SKW30N60HS_08 Datasheet PDF page 5 SKW30N60HS_08 Datasheet PDF page 6 SKW30N60HS_08 Datasheet PDF page 7 SKW30N60HS_08 Datasheet PDF page 8 SKW30N60HS_08 Datasheet PDF page 9  
100%
SKW30N60HS
High Speed IGBT in NPT-technology
C
30% lower
E
off
compared to previous generation
Short circuit withstand time – 10
µs
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E
off
increase with temperature
- very tight parameter distribution
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1
for target applications
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
600V
I
C
30
E
off
480µJ
T
j
Marking
Package
PG-TO-247-3
PG-TO-247-3
G
E
Type
SKW30N60HS
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
150°C K30N60HS
Symbol
V
CE
I
C
Value
600
41
30
Unit
V
A
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
600V,
T
j
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage static
transient (t
p
<1µs,
D<0.05)
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
600V,
T
j
150°C
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Time limited operating junction temperature for
t
< 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
I
Cpuls
-
I
F
112
112
41
28
I
Fpuls
V
GE
t
SC
P
tot
T
j
,
T
stg
T
j(tl)
-
112
±20
±30
10
250
-55...+150
175
260
V
µs
W
°C
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.2
Sep 08
Power Semiconductors
Home - IC Supply - Link
Copyright© 2001 - 2014 ICPDF All Rights Reserved ICPDF.COM

粤公网安备 44030402000629号


粤ICP备13051289号-7