SLA24C32-S/P [INFINEON]

32 Kbit 4096 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus; 32 Kbit的4096× 8位串行CMOS EEPROM的,同步的I2C 2线总线
SLA24C32-S/P
型号: SLA24C32-S/P
厂家: Infineon    Infineon
描述:

32 Kbit 4096 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
32 Kbit的4096× 8位串行CMOS EEPROM的,同步的I2C 2线总线

存储 内存集成电路 光电二极管 双倍数据速率 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 时钟
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Standard EEPROM ICs  
SLx 24C32  
32 Kbit (4096 × 8 bit)  
Serial CMOS-EEPROM with  
I2C Synchronous 2-Wire Bus  
Data Sheet Preliminary 1998-07-27  
SLx 24C32  
Revision History:  
Current Version: Preliminary 1998-07-27  
02.98, 04.98  
Previous Version:  
Page  
Page  
Subjects (major changes since last revision)  
(in previous (in current  
Version)  
3
Version)  
3
Text was changed to “Typical programming time 5 ms for up to  
32 bytes”.  
11, 12  
21  
11, 13  
21  
The erase/write cycle is finished latest after 10 8 ms.  
The write or erase cycle is finished latest after 10 4 ms.  
The line “erase/write cycle” was removed.  
24  
24  
24  
24  
Chapter 8.4 Erase and Write Characteristics” has been added.  
2
I C Bus  
2
2
Purchase of Siemens I C components conveys the license under the Philips I C patent to use the components in  
2
2
the I C system provided the system conforms to the I C specifications defined by Philips.  
Edition Preliminary 1998-07-27  
Published by Siemens AG,  
Bereich Halbleiter, Marketing-  
Kommunikation, Balanstraße 73,  
81541 München  
©
Siemens AG 1998.  
All Rights Reserved.  
Attention please!  
As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes  
and circuits implemented within components or assemblies.  
The information describes the type of component and shall not be considered as assured characteristics.  
Terms of delivery and rights to change design reserved.  
For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies  
and Representatives worldwide (see address list).  
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact  
your nearest Siemens Office, Semiconductor Group.  
Siemens AG is an approved CECC manufacturer.  
Packing  
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we  
will take packing material back, if it is sorted. You must bear the costs of transport.  
For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs in-  
curred.  
Components used in life-support devices or systems must be expressly authorized for such purpose!  
Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express  
written approval of the Semiconductor Group of Siemens AG.  
1
A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the  
failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.  
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain hu-  
man life. If they fail, it is reasonable to assume that the health of the user may be endangered.  
32 Kbit (4096 × 8 bit) Serial CMOS  
SLx 24C32  
EEPROMs, I2C Synchronous 2-Wire Bus  
Preliminary  
Features  
• Data EEPROM internally organized as  
4096 bytes and 128 pages × 32 bytes  
• Page Protection Mode for protecting the  
EEPROM against unintended data changes  
(SLx 24C32.../P types only)  
• Low power CMOS  
P-DIP-8-4  
VCC = 2.7 to 5.5 V operation  
• Two wire serial interface bus, I2C-Bus compatible  
• Three chip select pins to address 8 devices  
• Filtered inputs for noise suppression with  
Schmitt trigger  
• Clock frequency up to 400 kHz  
• High programming flexibility  
– Internal programming voltage  
– Self timed programming cycle including erase  
– Byte-write and page-write programming, between  
1 and 32 bytes  
P-DSO-8-3  
– Typical programming time 5 ms for up to 32 bytes  
• High reliability  
– Endurance 106 cycles1)  
– Data retention 40 years1)  
– ESD protection 4000 V on all pins  
• 8 pin DIP/DSO packages  
• Available for extended temperature ranges  
– Industrial:  
– Automotive:  
40 °C to + 85 °C  
40 °C to + 125 °C  
1)  
Values are temperature dependent, for further information please refer to your Siemens sales office.  
Semiconductor Group  
3
Preliminary 1998-07-27  
 
SLx 24C32  
Voltage  
Ordering Information  
Type  
Ordering Code Package  
Temperature  
SLA 24C32-D  
SLA 24C32-D/P  
Q67100-H3746 P-DIP-8-4 – 40 °C … + 85 °C 4.5 V...5.5 V  
Q67100-H3752  
SLA 24C32-S  
SLA 24C32-S/P  
Q67100-H3748 P-DSO-8-3 – 40 °C … + 85 °C 4.5 V...5.5 V  
Q67100-H3753  
SLA 24C32-D-3  
SLA 24C32-D-3/P  
Q67100-H3747 P-DIP-8-4 – 40 °C … + 85 °C 2.7 V...5.5 V  
Q67100-H3754  
SLA 24C32-S-3  
SLA 24C32-S-3/P  
Q67100-H3749 P-DSO-8-3 – 40 °C … + 85 °C 2.7 V...5.5 V  
Q67100-H3769  
SLE 24C32-D  
SLE 24C32-D/P  
Q67100-H3235 P-DIP-8-4 – 40°C … + 125 °C 4.5 V...5.5 V  
Q67100-H3755  
SLE 24C32-S  
SLE 24C32-S/P  
Q67100-H3236 P-DSO-8-3 – 40°C … + 125 °C 4.5 V...5.5 V  
Q67100-H3756  
Other types are available on request:  
– Temperature range (– 55 °C + 150 °C)  
– Package (die, wafer delivery)  
– 3V types with automotive temperature range (– 40 °C + 125 °C)  
1
Pin Configuration  
P-DIP-8-4  
P-DSO-8-3  
VCC  
WP  
SCL  
SDA  
CS0  
CS1  
CS2  
VSS  
1
2
3
4
8
7
6
VCC  
WP  
CS0  
CS1  
1
2
8
7
5
IEP02124  
CS2  
VSS  
3
4
6
SCL  
SDA  
5
IEP02125  
Figure 1  
Pin Configuration (top view)  
Semiconductor Group  
4
Preliminary 1998-07-27  
SLx 24C32  
Pin Definitions and Functions  
Table 1  
Pin No.  
Symbol  
Function  
1, 2, 3  
CS0, CS1, CS2  
Chip select inputs  
Ground  
4
5
6
7
8
VSS  
SDA  
SCL  
WP  
VCC  
Serial bidirectional data bus  
Serial clock input  
Write protection input  
Supply voltage  
Pin Description  
Serial Clock (SCL)  
The SCL input is used to clock data into the device on the rising edge and to clock data  
out of the device on the falling edge.  
Serial Data (SDA)  
SDA is a bidirectional pin used to transfer addresses, data or control information into the  
device or to transfer data out of the device. The output is open drain, performing a wired  
AND function with any number of other open drain or open collector devices. The SDA  
bus requires a pull-up resistor to VCC.  
Chip Select (CS0, CS1, CS2)  
The CS0, CS1 and CS2 pins are chip select inputs either hard wired or actively driven  
to VCC or VSS. These inputs allow the selection of one of eight possible devices sharing  
a common bus.  
Write Protection (WP)  
WP switched to VSS allows normal read/write operations.  
WP switched to VCC protects the EEPROM against changes (hardware write protection).  
Semiconductor Group  
5
Preliminary 1998-07-27  
SLx 24C32  
2
Description  
The SLx 24C32 device is a serial electrically erasable and programmable read only  
memory (EEPROM), organized as 4096 × 8 bit. The data memory is divided into  
128 pages. The 32 bytes of a page can be programmed simultaneously.  
The device conforms to the specification of the 2-wire serial I2C-Bus. Three chip select  
pins allow the addressing of 8 devices on the I2C-Bus. Low voltage design permits  
operation down to 2.7 V with low active and standby currents. All devices have a  
minimum endurance of 106 erase/write cycles.  
The device operates at 5.0 V ± 10% with a maximum clock frequency of 400 kHz and at  
2.7 ... 5.5 V with a maximum clock frequency of 100 kHz. The device is available as 5 V  
type (VCC = 4.5 … 5.5 V) with two temperature ranges for industrial and automotive  
applications and as 3 V type (VCC = 2.7 … 5.5 V) for industrial applications. The  
EEPROMs are mounted in eight-pin DIP and DSO packages or are also supplied as  
chips.  
V
V
CC  
SS  
CS0 CS1 CS2  
WP  
Programming  
Control  
Chip Address  
Control  
Logic  
H.V. Pump  
Start/  
Stop  
Logic  
Serial  
Control  
Logic  
SCL  
SDA  
Address  
Logic  
X
DEC  
EEPROM  
Page Logic  
Y DEC  
Dout/ACK  
IEB02525  
Figure 2  
Block Diagram  
Semiconductor Group  
6
Preliminary 1998-07-27  
SLx 24C32  
3
I2C-Bus Characteristics  
Access to the SLx 24C32 device is given via the I2C bus. This bidirectional bus consists  
of two wires SCL and SDA for clock and data. The protocol is master/slave oriented,  
where the serial EEPROM always takes the role of a slave.  
V
CC  
Slave 1  
Slave 5  
Slave 2  
Slave 6  
Slave 3  
Slave 7  
Slave 4  
Slave 8  
SCL  
SDA  
Master  
V
CC  
IES02183  
Figure 3  
Bus Configuration  
Master  
Slave  
Device that initiates the transfer of data and provides the clock for transmit  
and receive operations.  
Device addressed by the master, capable of receiving and transmitting  
data.  
Transmitter The device using the SDA as output is defined as the transmitter. Due to  
the open drain characteristic of the SDA output the device applying a low  
level wins.  
Receiver  
The device using the SDA as input is defined as the receiver.  
Semiconductor Group  
7
Preliminary 1998-07-27  
SLx 24C32  
The conventions for the serial clock line and the bidirectional data line are shown in  
figure 4.  
SCL  
1
2
8
9
1
9
SDA  
ACK  
ACK  
START Condition  
Data allowed  
to Change  
Acknowledge  
STOP Condition  
IED02128  
Figure 4  
I2C-Bus Timing Conventions for START Condition, STOP Condition, Data  
Validation and Transfer of Acknowledge ACK  
Standby  
Mode in which the bus is not busy (no serial transmission, no  
programming): both clock (SCL) and data line (SDA) are in high  
state. The device enters the standby mode after a STOP condition  
or after a programming cycle.  
START Condition High to low transition of SDA when SCL is high, preceding all  
commands.  
STOP Condition  
Low to high transition of SDA when SCL is high, terminating all  
communications. A STOP condition after writing data initiates an  
EEPROM programming cycle. A STOP condition after reading  
data from the EEPROM initiates the standby mode.  
Acknowledge  
A successful reception of eight data bits is indicated by the  
receiver by pulling down the SDA line during the following clock  
cycle of SCL (ACK). The transmitter on the other hand has to  
release the SDA line after the transmission of eight data bits.  
The EEPROM as the receiving device responds with an  
acknowledge, when addressed. The master, on the other side,  
acknowledges each data byte transmitted by the EEPROM and  
can at any time end a read operation by releasing the SDA line (no  
ACK) followed by a STOP condition.  
Data Transfer  
Data must change only during low SCL state, data remains valid  
on the SDA bus during high SCL state. Nine clock pulses are  
required to transfer one data byte, the most significant bit (MSB)  
is transmitted first.  
Semiconductor Group  
8
Preliminary 1998-07-27  
 
SLx 24C32  
4
Device Addressing and EEPROM Addressing  
After a START condition, the master always transmits a command byte CSW or CSR.  
After the acknowledge of the EEPROM control bytes follow, their contents and the  
transmitter depend on the previous command byte. The description of the command and  
control bytes is shown in table 2.  
Command Byte Selects one of the 8 addressable slave devices: The chip select  
bits CS2, CS1 and CS0 (bit positions b3 to b1) are compared to their  
corresponding hard wired input pins CS2, CS1 and CS0,  
respectively.  
Selects operation: the least significant bit b0 is low for a write  
operation (Chip Select Write Command Byte, CSW) or set high for  
a read operation (Chip Select Read Command Byte, CSR).  
Control Bytes  
Following CSW (b0 = 0): The address bytes AHI/ALO containing  
the address bits A0 to A11 are transmitted by the master.  
Following CSR (b0 = 1): The EEPROM transmits the read out data.  
EEPROM data are read as long as the master pulls down SDA after  
each byte in order to acknowledge the transfer. The read operation  
is stopped by the master by releasing SDA (no acknowledge is  
applied) followed by a STOP condition.  
Table 2  
Command and Control Byte for I2C-Bus Addressing of Chip and EEPROM  
Command  
Definition  
Function  
b7  
1
b6  
0
b5  
1
b4  
0
b3  
b2  
b1  
b0  
0
CSW  
CSR  
AHI  
CS2 CS1 CS0  
CS2 CS1 CS0  
A11 A10 A9  
chip select for write  
chip select for read  
1
0
1
0
1
0
0
0
0
A8 high address  
A0 low address  
ALO  
DATA  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
D7 D6 D5 D4 D3 D2 D1 D0 data byte  
The device has an internal address counter which points to the current EEPROM  
address.  
The address counter is incremented  
– after a data byte to be written has been acknowledged, during entry of further data  
byte  
– during a byte read, thus the address counter points to the following address after  
reading a data byte.  
The timing conventions for read and write operations are described in figures 5 and 6.  
Semiconductor Group  
9
Preliminary 1998-07-27  
 
SLx 24C32  
Command Byte (CSW)  
Data Transfer to EEPROM  
SCL  
SDA  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
1
0
1
0
CS2 CS1 CS0  
0
ACK  
0
0
0
0
A11 A10 A9 A8 ACK  
Acknowledge from EEPROM  
START from Master  
Acknowledge from EEPROM  
SCL  
SDA  
19  
20  
21  
22  
23  
24  
25  
26  
27  
A7 A6 A5 A4 A3 A2 A1 A0  
ACK  
Acknowledge from EEPROM  
IED02516  
Figure 5  
Timing of the Command Byte CSW  
Command Byte (CSR)  
Data Transfer from EEPROM  
SCL  
SDA  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
1
0
ACK  
ACK  
1
0
CS2 CS1 CS0  
1
START from Master  
Acknowledge from EEPROM  
Acknowledge from Master  
IED02517  
Figure 6  
Timing of the Command Byte CSR  
Semiconductor Group  
10  
Preliminary 1998-07-27  
SLx 24C32  
5
Write Operations  
Changing of the EEPROM data is initiated by the master with the command byte CSW.  
Either one byte (Byte Write) or up to 32 byte (Page Write) are modified in one  
programming procedure. Setting the Write Protection pin WP to VCC activates the  
hardware write protection and therefore any programming is suppressed. For normal  
operation WP has to be set to VSS.  
5.1  
Byte Write  
Address Setting  
After a START condition the master transmits the Chip Select  
Write byte CSW. The EEPROM acknowledges the CSW byte  
during the ninth clock cycle. The following two bytes AHI/ALO  
with the EEPROM address (A0 to A11) are loaded into the  
address counter of the EEPROM and acknowledged by the  
EEPROM.  
Transmission of Data Finally the master transmits the data byte which is also  
acknowledged by the EEPROM into the internal buffer.  
Programming Cycle  
Then the master applies a STOP condition which starts the  
internal programming procedure. The data bytes are written in  
the memory location addressed in the bytes AHI (A8 to A11)  
and ALO (A0 to A7). The programming procedure consists of  
an internally timed erase/write cycle. In the first step, the  
selected byte is erased to “1”. With the next internal step, the  
addressed byte is written according to the contents of the  
buffer.  
S
T
A
R
T
S
T
O
P
Bus Activity  
Master  
Command Byte EEPROM Address EEPROM Address  
CSW AHI ALO  
Data Byte  
SDA Line  
0
S
P
A
C
K
A
C
K
A
C
K
A
C
K
Bus Activity  
EEPROM  
IED02518  
Figure 7  
Byte Write Sequence  
The erase/write cycle is finished latest after 8 ms. Acknowledge polling can be used for  
speed enhancement in order to detect the end of the erase/write cycle. Please refer to  
chapter 5.3, Acknowledge Polling for further information.  
Semiconductor Group  
11  
Preliminary 1998-07-27  
SLx 24C32  
5.2  
Page Write  
Address Setting  
The page write procedure is the same as the byte write  
procedure up to the first data byte. In a page write instruction  
however, entry of the EEPROM address bytes AHI/ALO are  
followed by a sequence of one to a maximum of 32 data bytes  
with the new data to be programmed. These bytes are  
transferred to the internal page buffer of the EEPROM.  
Transmission of Data The first entered data byte will be stored according to the  
EEPROM address n given by AHI (A8 to A11) and ALO (A0 to  
A7). The internal address counter is incremented  
automatically after the entered data byte has been  
acknowledged. The next data byte is then stored at the next  
higher EEPROM address. EEPROM addresses within the  
same page have common page address bits A5 through A11.  
Only the respective five least significant address bits A0  
through A4 are incremented, as all data bytes to be  
programmed simultaneously have to be within the same page.  
Writing over the page border will cause the address counter to  
roll over to the first address of the page.  
Programming Cycle  
The master stops data entry by applying a STOP condition,  
which also starts the internally timed erase/write cycle. In the  
first step, all selected bytes are erased to “1”. With the next  
internal step, the addressed bytes are written according to the  
contents of the page buffer.  
Those bytes of the page that have not been addressed are not included in the  
programming.  
S
T
A
R
T
S
T
O
P
Command  
Byte  
CSW  
EEPROM  
Address  
EEPROM  
Address  
ALO  
Data  
Byte n  
Data  
Byte n+1  
Data  
Byte n+31  
...  
Bus Activity  
Master  
AHI  
0
P
S
SDA Line  
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
Bus Activity  
EEPROM  
IED02519  
Figure 8  
Page Write Sequence  
Semiconductor Group  
12  
Preliminary 1998-07-27  
SLx 24C32  
The erase/write cycle is finished latest after 8 ms. Acknowledge polling can be used for  
speed enhancement in order to detect the end of the erase/write cycle. Please refer to  
chapter 5.3, Acknowledge Polling for further information.  
5.3  
Acknowledge Polling  
During the erase/write cycle the EEPROM will not respond to a new command byte until  
the internal write procedure is completed. At the end of active programming the chip  
returns to the standby mode and the last entered EEPROM byte remains addressed by  
the address counter. To determine the end of the internal erase/write cycle acknowledge  
polling can be initiated by the master by sending a START condition followed by a  
command byte CSR or CSW (read with b0 = 1 or write with b0 = 0). If the internal erase/  
write cycle is not completed, the device will not acknowledge the transmission. If the  
internal erase/write cycle is completed, the device acknowledges the received command  
byte and the protocol activities can continue.  
Internal Programming  
Procedure  
Send Start  
Send CS-Byte  
Acknowledge  
No  
from EEPROM  
received?  
Yes  
Next Operation  
IED02131  
Figure 9  
Flow Chart “Acknowledge Polling”  
Semiconductor Group  
13  
Preliminary 1998-07-27  
 
SLx 24C32  
STOP from Master initiates erase/write cycle  
START from Master  
CSR  
CSR  
CSR  
SDA  
P
S
1
S
1
S
S
1
P
Acknowledge of EEPROM  
indicates complete erase/  
write cycle  
STOP from Master initiates erase/write cycle  
START from Master  
e.g. STOP condition  
CSW  
CSW  
CSW  
SDA  
0
0
0
P
S
S
S
S
P
Acknowledge of EEPROM  
indicates complete erase/  
write cycle  
IED02166  
Figure 10  
Principle of Acknowledge Polling  
Semiconductor Group  
14  
Preliminary 1998-07-27  
SLx 24C32  
6
Read Operations  
Reading of the EEPROM data is initiated by the Master with the command byte CSR.  
6.1  
Random Read  
Random read operations allow the master to access any memory location.  
Address Setting  
The master generates a START condition followed by the  
command byte CSW. The receipt of the CSW-byte is  
acknowledged by the EEPROM with a low state on the SDA  
line. Now the master transmits the EEPROM address (AHI/  
ALO) to the EEPROM and the internal address counter is  
loaded with the desired address.  
Transmission of CSR After the acknowledge for the EEPROM address is received,  
the master generates a START condition, which terminates  
the initiated write operation. Then the master transmits the  
command byte CSR for read, which is acknowledged by the  
EEPROM.  
Transmission of  
EEPROM Data  
During the next eight clock pulses the EEPROM transmits the  
data byte and increments the internal address counter by one  
byte.  
STOP Condition from During the following clock cycle the masters releases the bus  
Master  
and then transmits the STOP condition.  
S
T
A
R
T
S
T
A
R
T
S
T
O
P
Bus Activity  
Master  
Command Byte EEPROM Address EEPROM Address  
Command Byte  
CSR  
CSW  
AHI  
ALO  
SDA Line  
0
S
S
1
P
A
C
K
A
C
K
A
C
K
A
C
K
Data Byte  
Bus Activity  
EEPROM  
IED02520  
Figure 11  
Random Read  
Semiconductor Group  
15  
Preliminary 1998-07-27  
SLx 24C32  
6.2  
Current Address Read  
The EEPROM content is read without setting an EEPROM address, in this case the  
current content of the address counter will be used (e.g. to continue a previous read  
operation after the Master has served an interrupt).  
Transmission of CSR For a current address read the master generates a START  
condition, which is followed by the command byte CSR (Chip  
Select Read). The receipt of the CSR-byte is acknowledged by  
the EEPROM with a low on the SDA line.  
Transmission of  
EEPROM Data  
During the next eight clock pulses the EEPROM transmits the  
data byte and increments the internal address counter by one  
byte.  
STOP Condition from During the following clock cycle the masters releases the bus  
Master  
and then transmits the STOP condition.  
S
T
A
R
T
S
T
O
P
Bus Activity  
Master  
Command Byte  
CSR  
SDA Line  
S
1
P
A
C
K
Data Byte  
Bus Activity  
EEPROM  
IED02132  
Figure 12  
Current Address Read  
Semiconductor Group  
16  
Preliminary 1998-07-27  
SLx 24C32  
6.3  
Sequential Read  
A sequential read is initiated in the same way as a current read or a random read except  
that the master acknowledges the data byte transmitted by the EEPROM. The EEPROM  
then continues the data transmission. The internal address counter is incremented by  
one during each data byte transmission.  
A sequential read allows the entire memory to be read during one read operation. After  
the highest addressable memory location is reached, the internal address pointer “rolls  
over” to the address 0 and the sequential read continues.  
The transmission is terminated by the master by releasing the SDA line (no  
acknowledge) and generating a STOP condition (see figure 13).  
S
T
A
R
T
S
T
O
P
A
C
K
A
C
K
Bus Activity  
Master  
Command Byte  
CSW  
SDA Line  
S
1
P
A
C
K
Data Byte n  
Data Byte n+1  
Data Byte n+x  
Bus Activity  
EEPROM  
IED02134  
Figure 13  
Sequential Read  
Semiconductor Group  
17  
Preliminary 1998-07-27  
 
SLx 24C32  
7
Page Protection ModeTM  
The page protection mode is supported by the SLx 24C32.../P types only. For example  
SLA 24C32-D/P has the same functionality as SLA 24C32-D enhanced by page  
protection mode.  
Each page (32 bytes) in the data memory can be protected against unintended data  
changes by an associated protection bit. The protection bit memory consists of an  
additional EEPROM of 128 bit (figure 14).  
Data in the data memory can be modified only if the assigned protection bit is erased  
(logical state “1”). After writing the data bytes to a page, the protection is achieved by  
writing the associated protection bit (logical state “0”). Further changes in the data in a  
protected page is possible only after erasing the protection bit.  
Data Memory Area  
0
1
2
3
Page 0  
Page 1  
Page 2  
Page 3  
.
.
.
.
.
.
.
.
.
n
Page n  
0
1
2
3
. . .  
31  
Byte  
Bit  
IED02521  
Figure 14  
Data Page and Assigned Protection Memory  
A special procedure to write or erase a protection bit guarantees proper activation or  
deactivation of page protection. For protection bit write or erase all 32 data bytes of the  
respective page have to be entered for verification. The data then are compared  
internally with the data to be protected. In case of identity the protection bit is written or  
erased respectively.  
Semiconductor Group  
18  
Preliminary 1998-07-27  
 
SLx 24C32  
7.1  
Protection Bit Handling  
The bits of the protection memory can be addressed directly for reading or programming.  
A protection bit address corresponds to the lowest address within the respective page  
(A5 to A11, A0 to A4 = zero). The status of each protection bit is sensed internally. A  
written state (“0”) prevents programming in the associated page. If an already protected  
memory page is accidentally addressed for programming, the programming procedure  
is suppressed.  
The conventional I2C-Bus protocol allows data bytes to be read and programmed only.  
Therefore an independent instruction sequence for addressing and manipulation of  
protection bits is implemented. For protection bit instructions the command byte CSW  
with its preceding START condition followed by the associated address bytes have to be  
entered twice (figures 15 through 17). The first command byte CSW is followed by the  
address bytes AHI/ALO with the bit/page address A0 through A4 always at zero. The  
second CSW is required for entering a control byte CTx for protection bit manipulation.  
The three control bytes for read, write or erase of a protection bit are listed below  
(table 3):  
Table 3  
Control Byte for Protection Bit Manipulation  
Address  
Name  
Definition  
Function  
b7  
x
b6  
x
b5  
x
b4  
x
b3  
x
b2  
x
b1  
0
b0  
0
CTR  
CTW  
CTE  
Protection bit read  
Protection bit write  
Protection bit erase  
x
x
x
x
x
x
0
1
x
x
x
x
x
x
1
1
Semiconductor Group  
19  
Preliminary 1998-07-27  
 
SLx 24C32  
7.2  
Protection Bit Write and Erase  
For writing or erasing a protection bit the data of the respective page have to be known  
by the master. The master has to present the page data as a reference for comparison  
by the EEPROM. A successful comparison is necessary in order to change the value of  
the protection bit.  
The data of the page are not affected by the write or erase procedure of the protection  
bit. The I2C-Bus protocol is shown in figure 15 for protection bit write and figure 16 for  
protection bit erase.  
S
T
A
R
T
S
T
A
R
T
Command EEPROM EEPROM  
Command  
Byte  
CSW  
Control  
Byte  
CTW  
Data  
Byte n  
Data  
Data  
S
T
O
P
Bus  
Activity  
Master  
...  
Byte  
Address  
Address  
Byte n+1 Byte n+31  
CSW  
AHI  
ALO  
0
0 0 0 0 0  
0
0 1  
S
S
P
SDA Line  
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
Bus Activity  
EEPROM  
IED02522  
Figure 15  
Sequence for Protection Bit Write  
S
S
T
A
R
T
Command EEPROM EEPROM  
T
A
R
T
Command  
Byte  
CSW  
Control  
Byte  
CTE  
Data  
Byte n  
Data  
Data  
S
Bus  
Activity  
Master  
T
O
P
Byte  
Address  
Address  
Byte n+1 Byte n+31  
CSW  
AHI  
ALO  
0
0 0 0 0 0  
0
1 1  
S
S
P
SDA Line  
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
Bus Activity  
EEPROM  
IED02523  
Figure 16  
Sequence for Protection Bit Erase  
The first command byte CSW followed by the address bytes AHI/ALO determines the  
page to be protected. The second command byte CSW (identical content of first CSW)  
is followed by the control byte CTW = 01H for protection bit write or CTE = 03H for  
protection bit erase. Depending on CTx, the addressed protection bit will be either  
written or erased.  
The control byte CTx is followed by 32 parameter bytes identical to the 32 data bytes of  
the page to be protected or unprotected. The data of the first entered byte must be  
identical to the data byte stored at the lowest address of the current page. The other  
Semiconductor Group  
20  
Preliminary 1998-07-27  
 
 
SLx 24C32  
31 bytes have to be identical to the bytes stored in ascending address order within the  
same page.  
A successful verification of each byte is indicated by the EEPROM by pulling the SDA  
line to low (acknowledge ACK).  
The bit programming procedure is initiated by the STOP condition after verification of the  
last byte. Programming is started only if all 256 bits of a page have been verified  
successfully. If bit programming has taken place, the address counter points to the  
uppermost address of the respective page. The write or erase cycle is finished latest  
after 4 ms. Acknowledge polling can be used for speed enhancement in order to detect  
the end of the write or erase cycle (refer to chapter 5.3, Acknowledge Polling).  
7.3  
Protection Bit Read  
The byte sequence for random bit read is shown in figure 17.  
S
T
A
R
T
S
T
A
R
T
A
C
K
A
C
K
Command EEPROM EEPROM  
Command  
Byte  
CSW  
Control  
Byte  
CTR  
S
T
O
P
Bus  
Activity  
Master  
Byte  
Address  
Address  
CSW  
AHI  
ALO  
0
0 0 0 0 0  
0
0 0  
S
S
P
SDA Line  
b
b
b
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
Data  
Byte n  
Data  
Byte n+1  
...  
Bus Activity  
EEPROM  
b = Protection Bit  
IED02524  
Figure 17  
Byte Sequence for Protection Bit Read  
The first command byte CSW followed by the address bytes AHI/ALO determine the  
protection bit to be read. The second command byte CSW is followed by the control byte  
00H for protection bit read. The first bit (MSB) of the transferred byte is the protection bit  
of the addressed page. The other 7 bits are not valid. The page protection status is  
indicated as follows:  
Protection Bit = 1: A normal write operation changes the data in the associated page  
Protection Bit = 0: The data in the associated page are protected against changes.  
If the master acknowledges a byte with a low state of the SDA line, the protection bit of  
the next page can be read as the first bit of the following byte. If the master releases the  
SDA line, a STOP condition has to complete the read procedure. Any number of bytes  
with a page protection status at the first bit position can be requested by the master. After  
the bit of the uppermost page has been addressed an overflow of the address counter  
occurs and the protection bit of the first page will be read next.  
Semiconductor Group  
21  
Preliminary 1998-07-27  
 
SLx 24C32  
8
Electrical Characteristics  
The listed characteristics are ensured over the operating range of the integrated circuit.  
Typical characteristics specify mean values expected over the production spread. If not  
otherwise specified, typical characteristics apply at TA = 25 °C and the given supply  
voltage.  
8.1  
Absolute Maximum Ratings  
Stresses above those listed here may cause permanent damage to the device. This is a  
stress rating only and functional operation of the device at these or any other conditions  
above those indicated in the operational section of this data sheet is not implied.  
Exposure to absolute maximum ratings for extended periods may affect device reliability.  
Parameter  
Limit Values  
Units  
Operating temperature  
range 1 (industrial)  
range 2 (automotive) – 40 to + 125  
– 40 to + 85  
°C  
°C  
Storage temperature  
Supply voltage  
– 65 to + 150  
°C  
V
– 0.3 to + 7.0  
All inputs and outputs with respect to ground  
ESD protection (human body model)  
– 0.3 to VCC + 0.5  
V
4000  
V
8.2  
DC Characteristics  
Symbol  
Parameter  
Limit Values  
typ. max.  
5.5  
Units Test Condition  
min.  
Supply voltage VCC  
4.5  
V
5 V type  
VCC  
2.7  
5.5  
3
V
3 V type  
Supply current1) ICC  
mA  
VCC = 5 V; fc = 100 kHz  
(write)  
Standby  
current2)  
ISB  
ILI  
1
µA  
µA  
µA  
V
Inputs at VCC or VSS  
VIN = VCC or VSS  
Input leakage  
current  
0.1  
0.1  
1
Output leakage ILO  
current  
1
V
OUT = VCC or VSS  
Input low  
voltage  
VIL  
– 0.3  
0.3 × VCC  
Semiconductor Group  
22  
Preliminary 1998-07-27  
SLx 24C32  
8.2  
DC Characteristics (cont’d)  
Parameter  
Symbol  
Limit Values  
typ. max.  
Units Test Condition  
min.  
Input high  
voltage  
VIH  
0.7 × VCC  
VCC + 0.5 V  
Output low  
voltage  
VOL  
CI/O  
0.4  
83)  
V
IOL = 3 mA; VCC = 5 V  
IOL = 2.1 mA; VCC = 3 V  
Input/output  
capacitance  
(SDA)  
pF  
pF  
VIN = 0 V; VCC = 5 V  
Input  
CIN  
63)  
VIN = 0 V; VCC = 5 V  
capacitance  
(other pins)  
1)  
The values for ICC are maximum peak values  
Valid over the whole temperature range  
This parameter is characterized only  
2)  
3)  
Semiconductor Group  
23  
Preliminary 1998-07-27  
SLx 24C32  
8.3  
AC Characteristics  
Parameter  
Symbol Limit Values  
Limit Values Units  
VCC = 2.7-5.5 V VCC = 4.5-5.5 V  
min.  
max.  
min.  
max.  
SCL clock frequency  
Clock pulse width low  
Clock pulse width high  
SDA and SCL rise time  
SDA and SCL fall time  
Start set-up time  
fSCL  
100  
400  
kHz  
µs  
µs  
ns  
ns  
µs  
µs  
ns  
µs  
µs  
ns  
µs  
µs  
tlow  
4.7  
4.0  
1.2  
thigh  
0.6  
1)  
tR  
1000  
300  
300  
300  
1)  
tF  
tSU.STA  
tHD.STA  
tSU.DAT  
tHD.DAT  
tAA  
4.7  
4.0  
200  
0
0.6  
0.6  
100  
0
Start hold time  
Data in set-up time  
Data in hold time  
SCL low to SDA data out valid  
Data out hold time  
0.1  
100  
4.0  
4.7  
4.5  
0.1  
50  
0.9  
tDH  
Stop set-up time  
tSU.STO  
0.6  
1.2  
Time the bus must be free before tBUF  
a new transmission can start  
SDA and SCL spike suppression tl  
50  
100  
50  
100  
ns  
time at constant inputs  
1)  
The minimum rise and fall times can be calculated as follows: (20 + (0.1/pF) × Cb) ns  
Example: Cb = 100 pF tR = (20 + 0.1 × 100) ns = 30 ns  
8.4  
Erase and Write Characteristics  
Symbol Limit Values  
VCC = 2.7-5.5 V VCC = 4.5-5.5 V  
Parameter  
Limit Values Units  
typ.  
5
max.  
typ.  
5
max.  
Erase + write cycle (per page)  
Erase page protection bit  
Write page protection bit  
tWR  
8
4
4
8
4
4
ms  
ms  
ms  
2.5  
2.5  
2.5  
2.5  
Semiconductor Group  
24  
Preliminary 1998-07-27  
SLx 24C32  
t
R
t
t
t
HIGH  
F
LOW  
SCL  
t
t
SU.DAT  
SU.STA  
t
t
t
t
BUF  
HD.STA  
HD.DAT  
SU.STO  
SDA In  
Start Condition  
Stop Condition  
t
t
DH  
AA  
SDA Out  
IED02127  
Figure 18  
Bus Timing Data  
Semiconductor Group  
25  
Preliminary 1998-07-27  
SLx 24C32  
9
Package Outlines  
P-DIP-8-4  
(Plastic Dual In-line Package)  
P-DSO-8-3  
(Plastic Dual Small Outline Package)  
Sorts of Packing  
Package outlines for tubes, trays etc. are contained in our  
Data Book “Package Information”.  
Dimensions in mm  
SMD = Surface Mounted Device  
Semiconductor Group  
26  
Preliminary 1998-07-27  

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