SLX24C164 [INFINEON]

16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus; 16 Kbit的2048 ×8位串行CMOS EEPROM的,同步的I2C 2线总线
SLX24C164
型号: SLX24C164
厂家: Infineon    Infineon
描述:

16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
16 Kbit的2048 ×8位串行CMOS EEPROM的,同步的I2C 2线总线

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件: 总22页 (文件大小:308K)
中文:  中文翻译
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Standard EEPROM ICs  
SLx 24C164  
16 Kbit (2048 × 8 bit)  
Serial CMOS-EEPROM with  
I2C Synchronous 2-Wire Bus  
Data Sheet 1998-07-27  
SLx 24C164  
Revision History:  
Current Version: 1998-07-27  
06.97  
Previous Version:  
Page  
Page  
Subjects (major changes since last revision)  
(in previous (in current  
Version)  
3
Version)  
3
Text was changed to “Typical programming time 5 ms for up to  
16 bytes”.  
5
5
WP = VCC protects the upper half entire memory.  
The erase/write cycle is finished latest after 10 8 ms.  
Figure 11: second command byte is a CSR and not CSW.  
“Capacitive load …” were added.  
11, 12  
15  
11, 12  
15  
19  
19  
20  
20  
Some timings were changed.  
20  
20  
The line “erase/write cycle” was removed.  
20  
20  
Chapter 7.4 Erase and Write Characteristics” has been added.  
2
I C Bus  
2
2
Purchase of Siemens I C components conveys the license under the Philips I C patent to use the components in  
2
2
the I C system provided the system conforms to the I C specifications defined by Philips.  
Edition 1998-07-27  
Published by Siemens AG,  
Bereich Halbleiter, Marketing-  
Kommunikation, Balanstraße 73,  
81541 München  
©
Siemens AG 1998.  
All Rights Reserved.  
Attention please!  
As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes  
and circuits implemented within components or assemblies.  
The information describes the type of component and shall not be considered as assured characteristics.  
Terms of delivery and rights to change design reserved.  
For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies  
and Representatives worldwide (see address list).  
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact  
your nearest Siemens Office, Semiconductor Group.  
Siemens AG is an approved CECC manufacturer.  
Packing  
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we  
will take packing material back, if it is sorted. You must bear the costs of transport.  
For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs in-  
curred.  
Components used in life-support devices or systems must be expressly authorized for such purpose!  
Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express  
written approval of the Semiconductor Group of Siemens AG.  
1
A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the  
failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.  
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain hu-  
man life. If they fail, it is reasonable to assume that the health of the user may be endangered.  
16 Kbit (2048 × 8 bit) Serial CMOS  
SLx 24C164  
EEPROMs, I2C Synchronous 2-Wire Bus  
Features  
• Data EEPROM internally organized as  
2048 bytes and 128 pages × 16 bytes  
• Low power CMOS  
VCC = 2.7 to 5.5 V operation  
• Two wire serial interface bus, I2C-Bus  
compatible  
P-DIP-8-4  
• Three chip select pins to address 8 devices  
• Filtered inputs for noise suppression with  
Schmitt trigger  
• Clock frequency up to 400 kHz  
• High programming flexibility  
– Internal programming voltage  
– Self timed programming cycle including erase  
– Byte-write and page-write programming, between  
1 and 16 bytes  
P-DSO-8-3  
– Typical programming time 5 ms for up to 16 bytes  
• High reliability  
– Endurance 106 cycles1)  
– Data retention 40 years1)  
– ESD protection 4000 V on all pins  
• 8 pin DIP/DSO packages  
• Available for extended temperature ranges  
– Industrial:  
– Automotive:  
40 °C to + 85 °C  
40 °C to + 125 °C  
1)  
Values are temperature dependent, for further information please refer to your Siemens Sales office.  
Semiconductor Group  
3
1998-07-27  
 
SLx 24C164  
Voltage  
Ordering Information  
Type  
Ordering Code Package  
Temperature  
SLA 24C164-D  
SLA 24C164-S  
SLA 24C164-D-3  
SLA 24C164-S-3  
SLE 24C164-D  
SLE 24C164-S  
Q67100-H3506 P-DIP-8-4 – 40 °C … + 85 °C 4.5 V...5.5 V  
Q67100-H3501 P-DSO-8-3 – 40 °C … + 85 °C 4.5 V...5.5 V  
Q67100-H3505 P-DIP-8-4 – 40 °C … + 85 °C 2.7 V...5.5 V  
Q67100-H3500 P-DSO-8-3 – 40 °C … + 85 °C 2.7 V...5.5 V  
Q67100-H3232 P-DIP-8-4 – 40°C … + 125 °C 4.5 V...5.5 V  
Q67100-H3233 P-DSO-8-3 – 40°C … + 125 °C 4.5 V...5.5 V  
Other types are available on request  
– Temperature range (– 55 °C + 150 °C)  
– Package (die, wafer delivery)  
1
Pin Configuration  
P-DIP-8-4  
P-DSO-8-3  
VCC  
WP  
SCL  
SDA  
CS0  
CS1  
CS2  
VSS  
1
2
3
4
8
7
6
VCC  
WP  
CS0  
CS1  
1
2
8
7
5
IEP02124  
CS2  
VSS  
3
4
6
SCL  
SDA  
5
IEP02125  
Figure 1  
Pin Configuration (top view)  
Pin Definitions and Functions  
Table 1  
Pin No.  
Symbol  
Function  
1, 2, 3  
CS0, CS1, CS2  
Chip select inputs  
Ground  
4
5
6
7
8
VSS  
SDA  
SCL  
WP  
VCC  
Serial bidirectional data bus  
Serial clock input  
Write protection input  
Supply voltage  
Semiconductor Group  
4
1998-07-27  
SLx 24C164  
Pin Description  
Serial Clock (SCL)  
The SCL input is used to clock data into the device on the rising edge and to clock data  
out of the device on the falling edge.  
Serial Data (SDA)  
SDA is a bidirectional pin used to transfer addresses, data or control information into the  
device or to transfer data out of the device. The output is open drain, performing a wired  
AND function with any number of other open drain or open collector devices. The SDA  
bus requires a pull-up resistor to VCC.  
Chip Select (CS0, CS1, CS2)  
The CS0, CS1 and CS2 pins are chip select inputs either hard wired or actively driven  
to VCC or VSS. These inputs allow the selection of one of eight possible devices sharing  
a common bus.  
Write Protection (WP)  
WP switched to VSS allows normal read/write operations.  
WP switched to VCC protects the entire EEPROM against changes (hardware write  
protection).  
Semiconductor Group  
5
1998-07-27  
SLx 24C164  
2
Description  
The SLx 24C164 device is a serial electrically erasable and programmable read only  
memory (EEPROM), organized as 2048 × 8 bit. The data memory is divided into  
128 pages. The 16 bytes of a page can be programmed simultaneously.  
The device conforms to the specification of the 2-wire serial I2C-Bus. Three chip select  
pins allow the addressing of 8 devices on the I2C-Bus. Low voltage design permits  
operation down to 2.7 V with low active and standby currents. All devices have a  
minimum endurance of 106 erase/write cycles.  
The device operates at 5.0 V ± 10% with a maximum clock frequency of 400 kHz and at  
2.7 ... 4.5 V with a maximum clock frequency of 100 kHz. The device is available as 5 V  
type (VCC = 4.5 … 5.5 V) with two temperature ranges for industrial and automotive  
applications and as 3 V type (VCC = 2.7 … 5.5 V) for industrial applications. The  
EEPROMs are mounted in eight-pin DIP and DSO packages or are also supplied as  
chips.  
V
V
CC  
SS  
CS0 CS1 CS2  
WP  
Programming  
Control  
Chip Address  
Control  
Logic  
H.V. Pump  
Start/  
Stop  
Logic  
Serial  
Control  
Logic  
SCL  
SDA  
Address  
Logic  
X
DEC  
EEPROM  
Page Logic  
Y DEC  
Dout/ACK  
IEB02145  
Figure 2  
Block Diagram  
Semiconductor Group  
6
1998-07-27  
SLx 24C164  
3
I2C-Bus Characteristics  
The SLx 24C164 devices support a master/slave bidirectional bus oriented protocol in  
which the EEPROM always takes the role of a slave.  
V
CC  
Slave 1  
Slave 5  
Slave 2  
Slave 6  
Slave 3  
Slave 7  
Slave 4  
Slave 8  
SCL  
SDA  
Master  
V
CC  
IES02183  
Figure 3  
Bus Configuration  
Master  
Slave  
Device that initiates the transfer of data and provides the clock for both  
transmit and receive operations.  
Device addressed by the master, capable of receiving and transmitting  
data.  
Transmitter The device with the SDA as output is defined as the transmitter. Due to  
the open drain characteristic of the SDA output the device applying a low  
level wins.  
Receiver  
The device with the SDA as input is defined as the receiver.  
Semiconductor Group  
7
1998-07-27  
SLx 24C164  
The conventions for the serial clock line and the bidirectional data line are shown in  
figure 4.  
SCL  
1
2
8
9
1
9
SDA  
ACK  
ACK  
START Condition  
Data allowed  
to Change  
Acknowledge  
STOP Condition  
IED02128  
Figure 4  
I2C-Bus Timing Conventions for START Condition, STOP Condition, Data Valida-  
tion and Transfer of Acknowledge ACK  
Standby  
Mode in which the bus is not busy (no serial transmission, no  
programming): both clock (SCL) and data line (SDA) are in high  
state. The device enters the standby mode after a STOP condition  
or after a programming cycle.  
START Condition High to low transition of SDA when SCL is high, preceding all  
commands.  
STOP Condition  
Low to high transition of SDA when SCL is high, terminating all  
communications. A STOP condition initiates an EEPROM  
programming cycle. A STOP condition after reading a data byte  
from the EEPROM initiates the Standby mode.  
Acknowledge  
A successful reception of eight data bits is indicated by the  
receiver by pulling down the SDA line during the following clock  
cycle of SCL (ACK). The transmitter on the other hand has to  
release the SDA line after the transmission of eight data bits.  
The EEPROM as the receiving device responds with an  
acknowledge, when addressed. The master, on the other side,  
acknowledges each data byte transmitted by the EEPROM and  
can at any time end a read operation by releasing the SDA line (no  
ACK) followed by a STOP condition.  
Data Transfer  
Data must change only during low SCL state, data remains valid  
on the SDA bus during high SCL state. Nine clock pulses are  
required to transfer one data byte, the most significant bit (MSB)  
is transmitted first.  
Semiconductor Group  
8
1998-07-27  
 
SLx 24C164  
4
Device Addressing and EEPROM Addressing  
After a START condition, the master always transmits a Command Byte CSW or CSR.  
After the acknowledge of the EEPROM a Control Byte follows, its content and the  
transmitter depend on the previous Command Byte. The description of the Command  
and Control Bytes is shown in table 2.  
Command Byte Selects one of the 8 addressable devices: the chip select bits c2,  
c1 and c0 (bit positions b6 to b4) are compared to their  
corresponding hard wired input pins CS2, CS1 and CS0,  
respectively (c1 is the complement of CS1 pin).  
Selects operation: the least significant bit b0 is low for a write  
operation (Chip Select Write Command Byte CSW) or set high for a  
read operation (Chip Select Read Command Byte CSR).  
Contains address information: in the CSW Command Byte, the  
bit positions b3 to b1 are decoded for the three uppermost EEPROM  
address bits A10, A9, A8 (in the CSR Command Byte, the bit  
positions b3 to b1 are left undefined).  
Control Byte  
Following CSW (b0 = 0): contains the eight lower bits of the  
EEPROM address (EEA) bit A7 to A0.  
Following CSR (b0 = 1): contains the data read out, transmitted by  
the EEPROM. The EEPROM data are read as long as the master  
pulls down SDA after each byte in order to acknowledge the  
transfer. The read operation is stopped by the master by releasing  
SDA (no acknowledge is applied) followed by a STOP condition.  
Table 2  
Command and Control Byte for I2C-Bus Addressing of Chip and EEPROM  
Definition  
Function  
b7 b6 b5 b4 b3 b2 b1 b0  
CSW  
CSR  
EEA  
1
1
c2 c1 c0 A10 A9 A8 0  
c2 c1 c0 x  
Chip Select for Write  
Chip Select for Read  
x
x
1
A7 A6 A5 A4 A3 A2 A1 A0 EEPROM address  
The device has an internal address counter which points to the current EEPROM  
address.  
The address counter is incremented  
– after a data byte to be written has been acknowledged, during entry of further data  
byte  
– during a byte read, thus the address counter points to the following address after  
reading a data byte.  
Semiconductor Group  
9
1998-07-27  
 
SLx 24C164  
The timing conventions for read and write operations are described in figures 5 and 6.  
Command Byte (CSW)  
Data Transfer to EEPROM  
SCL  
SDA  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
1
c2  
c1 c0 A10 A9 A8  
0
A7 A6 A5 A4 A3 A2 A1 A0 ACK  
START from Master  
Acknowledge from EEPROM  
Acknowledge from EEPROM  
IED02184  
Figure 5  
Timing of the Command Byte CSW  
Command Byte (CSR)  
Data Transfer from EEPROM  
SCL  
SDA  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
1
c2  
ACK  
ACK  
c1 c0  
1
X
X
X
START from Master  
Acknowledge from EEPROM  
Acknowledge from Master  
IED02275  
Figure 6  
Timing of the Command Byte CSR  
Semiconductor Group  
10  
1998-07-27  
 
 
SLx 24C164  
5
Write Operations  
Changing of the EEPROM data is initiated by the master with the command byte CSW.  
Depending on the state of the Write Protection pin WP either one byte (Byte Write) or up  
to 16 byte (Page Write) are modified in one programming procedure.  
5.1  
Byte Write  
Address Setting  
After a START condition the master transmits the Chip Select  
Write byte CSW. The EEPROM acknowledges the CSW byte  
during the ninth clock cycle. The following byte with the  
EEPROM address (A0 to A7) is loaded into the address  
counter of the EEPROM and acknowledged by the EEPROM.  
Transmission of Data Finally the master transmits the data byte which is also  
acknowledged by the EEPROM into the internal buffer.  
Programming Cycle  
Then the master applies a STOP condition which starts the  
internal programming procedure. The data bytes are written in  
the memory location addressed in the EEA byte (A0 to A7)  
and the CSW byte (A8 to A10). The programming procedure  
consists of an internally timed erase/write cycle. In the first  
step, the selected byte is erased to “1”. With the next internal  
step, the addressed byte is written according to the contents  
of the buffer.  
S
T
A
R
T
S
T
O
P
Bus Activity  
Master  
Command Byte EEPROM Address  
CSW EEA  
Data Byte  
SDA Line  
0
S
P
A
C
K
A
C
K
A
C
K
Bus Activity  
EEPROM  
IED02129  
Figure 7  
Byte Write Sequence  
The erase/write cycle is finished latest after 8 ms. Acknowledge polling may be used for  
speed enhancement in order to indicate the end of the erase/write cycle (refer to  
chapter 5.3 Acknowledge Polling).  
Semiconductor Group  
11  
1998-07-27  
SLx 24C164  
5.2  
Page Write  
Address Setting  
The page write procedure is the same as the byte write  
procedure up to the first data byte. In a page write instruction  
however, entry of the EEPROM address byte EEA is followed  
by a sequence of one to maximum sixteen data bytes with the  
new data to be programmed. These bytes are transferred to  
the internal page buffer of the EEPROM.  
Transmission of Data The first entered data byte will be stored according to the  
EEPROM address n given by EEA (A0 to A7) and CSW (A8 to  
A10). The internal address counter is incremented  
automatically after the entered data byte has been  
acknowledged. The next data byte is then stored at the next  
higher EEPROM address. EEPROM addresses within the  
same page have common page address bits A4 through A10.  
Only the respective four least significant address bits A0  
through A3 are incremented, as all data bytes to be  
programmed simultaneously have to be within the same page.  
Programming Cycle  
The master stops data entry by applying a STOP condition,  
which also starts the internally timed erase/write cycle. In the  
first step, all selected bytes are erased to “1”. With the next  
internal step, the addressed bytes are written according to the  
contents of the page buffer.  
Those bytes of the page that have not been addressed are not included in the  
programming.  
S
T
A
R
T
S
T
O
P
Bus Activity  
Master  
Command Byte EEPROM Address  
CSW EEA n  
Data Byte n  
Data Byte n+1  
Data Byte n+15  
SDA Line  
0
S
P
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
Bus Activity  
EEPROM  
IED02140  
Figure 8  
Page Write Sequence  
The erase/write cycle is finished latest after 8 ms. Acknowledge polling may be used for  
speed enhancement in order to indicate the end of the erase/write cycle (refer to  
chapter 5.3 Acknowledge Polling).  
Semiconductor Group  
12  
1998-07-27  
SLx 24C164  
5.3  
Acknowledge Polling  
During the erase/write cycle the EEPROM will not respond to a new command byte until  
the internal write procedure is completed. At the end of active programming the chip  
returns to the standby mode and the last entered EEPROM byte remains addressed by  
the address counter. To determine the end of the internal erase/write cycle acknowledge  
polling can be initiated by the master by sending a START condition followed by a  
command byte CSR or CSW (read with b0 = 1 or write with b0 = 0). If the internal erase/  
write cycle is not completed, the device will not acknowledge the transmission. If the  
internal erase/write cycle is completed, the device acknowledges the received command  
byte and the protocol activities can continue.  
Internal Programming  
Procedure  
Send Start  
Send CS-Byte  
Acknowledge  
No  
from EEPROM  
received?  
Yes  
Next Operation  
IED02131  
Figure 9  
Flow Chart “Acknowledge Polling”  
Semiconductor Group  
13  
1998-07-27  
SLx 24C164  
STOP from Master initiates erase/write cycle  
START from Master  
CSR  
CSR  
CSR  
SDA  
P
S
1
S
1
S
S
1
P
Acknowledge of EEPROM  
indicates complete erase/  
write cycle  
STOP from Master initiates erase/write cycle  
START from Master  
e.g. STOP condition  
CSW  
CSW  
CSW  
SDA  
0
0
0
P
S
S
S
S
P
Acknowledge of EEPROM  
indicates complete erase/  
write cycle  
IED02166  
Figure 10  
Principle of Acknowledge Polling  
Semiconductor Group  
14  
1998-07-27  
SLx 24C164  
6
Read Operations  
Reading of the EEPROM data is initiated by the Master with the command byte CSR.  
6.1  
Random Read  
Random read operations allow the master to access any memory location.  
Address Setting  
The master generates a START condition followed by the  
command byte CSW. The receipt of the CSW-byte is  
acknowledged by the EEPROM with a low on the SDA line.  
Now the master transmits the EEPROM address (EEA) to the  
EEPROM and the internal address counter is loaded with the  
desired address.  
Transmission of CSR After the acknowledge for the EEPROM address is received,  
the master generates a START condition, which terminates  
the initiated write operation. Then the master transmits the  
command byte CSR for read, which is acknowledged by the  
EEPROM.  
Transmission of  
EEPROM Data  
During the next eight clock pulses the EEPROM transmits the  
data byte and increments the internal address counter.  
STOP Condition from During the following clock cycle the masters releases the bus  
Master  
and then transmits the STOP condition.  
S
T
A
R
T
S
T
A
R
T
S
T
O
P
Bus Activity  
Master  
Command Byte EEPROM Address  
CSW EEA n  
Command Byte  
CSR  
SDA Line  
0
S
S
1
P
A
C
K
A
C
K
A
C
K
Data Byte  
Bus Activity  
EEPROM  
IED02133  
Figure 11  
Random Read  
Semiconductor Group  
15  
1998-07-27  
SLx 24C164  
6.2  
Current Address Read  
The EEPROM content is read without setting an EEPROM address, in this case the  
current content of the address counter will be used (e.g. to continue a previous read  
operation after the Master has served an interrupt).  
Transmission of CSR For a current address read the master generates a START  
condition, which is followed by the command byte CSR (chip  
select read). The receipt of the CSR-byte is acknowledged by  
the EEPROM with a low on the SDA line.  
Transmission of  
EEPROM Data  
During the next eight clock pulses the EEPROM transmits the  
data byte and increments the internal address counter.  
STOP Condition from During the following clock cycle the masters releases the bus  
Master  
and then transmits the STOP condition.  
S
T
A
R
T
S
T
O
P
Bus Activity  
Master  
Command Byte  
CSR  
SDA Line  
S
1
P
A
C
K
Data Byte  
Bus Activity  
EEPROM  
IED02132  
Figure 12  
Current Address Read  
Semiconductor Group  
16  
1998-07-27  
SLx 24C164  
6.3  
Sequential Read  
A sequential read is initiated in the same way as a current read or a random read except  
that the master acknowledges the data byte transmitted by the EEPROM. The EEPROM  
then continues the data transmission. The internal address counter is incremented by  
one during each data byte transmission.  
A sequential read allows the entire memory to be read during one read operation. After  
the highest addressable memory location is reached, the internal address pointer “rolls  
over” to the address 0 and the sequential read continues.  
The transmission is terminated by the master by releasing the SDA line (no  
acknowledge) and generating a STOP condition (see figure 13).  
S
T
A
R
T
S
T
O
P
A
C
K
A
C
K
Bus Activity  
Master  
Command Byte  
CSW  
SDA Line  
S
1
P
A
C
K
Data Byte n  
Data Byte n+1  
Data Byte n+x  
Bus Activity  
EEPROM  
IED02134  
Figure 13  
Sequential Read  
Semiconductor Group  
17  
1998-07-27  
 
SLx 24C164  
7
Electrical Characteristics  
The listed characteristics are ensured over the operating range of the integrated circuit.  
Typical characteristics specify mean values expected over the production spread. If not  
otherwise specified, typical characteristics apply at TA = 25 °C and the given supply  
voltage.  
7.1  
Absolute Maximum Ratings  
Stresses above those listed here may cause permanent damage to the device. This is a  
stress rating only and functional operation of the device at these or any other conditions  
above those indicated in the operational section of this data sheet is not implied.  
Exposure to absolute maximum ratings for extended periods may affect device reliability.  
Parameter  
Limit Values  
Units  
Operating temperature  
range 1 (industrial)  
range 2 (automotive) – 40 to + 125  
– 40 to + 85  
°C  
°C  
Storage temperature  
Supply voltage  
– 65 to + 150  
°C  
V
– 0.3 to + 7.0  
All inputs and outputs with respect to ground  
ESD protection (human body model)  
– 0.3 to VCC + 0.5  
V
4000  
V
7.2  
DC Characteristics  
Symbol  
Parameter  
Limit Values  
typ. max.  
5.5  
Units Test Condition  
min.  
Supply voltage VCC  
4.5  
V
5 V type  
VCC  
2.7  
5.5  
V
3 V type  
Supply current1) ICC  
1
3
mA  
VCC = 5 V; fc = 100 kHz  
(write)  
Standby  
current2)  
ISB  
ILI  
50  
µA  
µA  
µA  
V
Inputs at VCC or VSS  
VIN = VCC or VSS  
Input leakage  
current  
0.1 10  
0.1 10  
Output leakage ILO  
current  
VOUT = VCC or VSS  
Input low  
voltage  
VIL  
– 0.3  
0.3 × VCC  
Semiconductor Group  
18  
1998-07-27  
SLx 24C164  
7.2  
DC Characteristics (cont’d)  
Parameter  
Symbol  
Limit Values  
typ. max.  
Units Test Condition  
min.  
Input high  
voltage  
VIH  
0.7 × VCC  
VCC + 0.5 V  
Output low  
voltage  
VOL  
CI/O  
0.4  
83)  
V
IOL = 3 mA; VCC = 5 V  
IOL = 2.1 mA; VCC = 3 V  
Input/output  
capacitance  
(SDA)  
pF  
pF  
pF  
VIN = 0 V; VCC = 5 V  
Input  
capacitance  
(other pins)  
CIN  
63)  
VIN = 0 V; VCC = 5 V  
Capacitive load Cb  
400  
for each bus line  
1)  
The values for ICC are maximum peak values  
Valid over the whole temperature range  
This parameter is characterized only  
2)  
3)  
Semiconductor Group  
19  
1998-07-27  
SLx 24C164  
7.3  
AC Characteristics  
Parameter  
Symbol Limit Values  
Limit Values Units  
VCC = 2.7-5.5 V VCC = 4.5-5.5 V  
min.  
max.  
min.  
max.  
SCL clock frequency  
Clock pulse width low  
Clock pulse width high  
SDA and SCL rise time  
SDA and SCL fall time  
Start set-up time  
fSCL  
100  
400  
kHz  
µs  
µs  
ns  
ns  
µs  
µs  
ns  
µs  
µs  
ns  
µs  
µs  
tlow  
4.7  
4.0  
1.2  
thigh  
0.6  
1)  
tR  
1000  
300  
300  
300  
1)  
tF  
tSU.STA  
tHD.STA  
tSU.DAT  
tHD.DAT  
tAA  
4.7  
4.0  
200  
0
0.6  
0.6  
100  
0
Start hold time  
Data in set-up time  
Data in hold time  
SCL low to SDA data out valid  
Data out hold time  
0.1  
100  
4.0  
4.7  
4.5  
0.1  
50  
0.9  
tDH  
Stop set-up time  
tSU.STO  
0.6  
1.2  
Time the bus must be free before tBUF  
a new transmission can start  
SDA and SCL spike suppression tl  
50  
100  
50  
100  
ns  
time at constant inputs  
1)  
The minimum rise and fall times can be calculated as follows: 20 + (0.1/pF) × Cb [ns]  
Example: Cb = 100 pF tR = 20 + 0.1 × 100 [ns] = 30 ns  
7.4  
Erase and Write Characteristics  
Symbol Limit Values  
VCC = 2.7-5.5 V VCC = 4.5-5.5 V  
Parameter  
Limit Values Units  
typ.  
5
max.  
typ.  
5
max.  
Erase + write cycle (per page)  
Erase page protection bit  
Write page protection bit  
tWR  
8
4
4
8
4
4
ms  
ms  
ms  
2.5  
2.5  
2.5  
2.5  
Semiconductor Group  
20  
1998-07-27  
SLx 24C164  
t
R
t
t
t
HIGH  
F
LOW  
SCL  
t
t
SU.DAT  
SU.STA  
t
t
t
t
BUF  
HD.STA  
HD.DAT  
SU.STO  
SDA In  
Start Condition  
Stop Condition  
t
t
DH  
AA  
SDA Out  
IED02127  
Figure 14  
Bus Timing Data  
Semiconductor Group  
21  
1998-07-27  
SLx 24C164  
8
Package Outlines  
P-DIP-8-4  
(Plastic Dual In-line Package)  
P-DSO-8-3  
(Plastic Dual Small Outline Package)  
Sorts of Packing  
Package outlines for tubes, trays etc. are contained in our  
Data Book “Package Information”.  
Dimensions in mm  
1998-07-27  
SMD = Surface Mounted Device  
Semiconductor Group  
22  

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