SMBT6428 [INFINEON]
NPN Silicon Transistors; NPN硅晶体管
| 型号： | SMBT6428 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon Transistors |
| 文件： | 总6页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon Transistors
SMBT 6428
SMBT 6429
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
SMBT 6428
SMBT 6429
s1K
s1L
Q68000-A8321
Q68000-A8322
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
SMBT 6428
SMBT 6429
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
VCE0
VCB0
VEB0
50
60
45
55
V
6
Collector current
I
C
200
330
150
mA
mW
˚C
Total power dissipation, TS = 71 ˚C
Junction temperature
P
tot
T
j
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 310
≤ 240
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
SMBT 6428
SMBT 6429
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
I
C
= 1 mA
SMBT 6428
SMBT 6429
50
45
–
–
–
–
Collector-base breakdown voltage
= 10 µA
I
C
SMBT 6428
SMBT 6429
60
55
–
–
–
–
Emitter-base breakdown voltage
= 1 µA
6
–
–
I
E
Collector-base cutoff current
ICB0
V
CB = 30 V, I
E
= 0
= 0, T
–
–
–
–
10
10
nA
µA
V
CB = 30 V, I
E
A
= 150 ˚C
Collector cutoff current
= 0
I
I
CE0
EB0
–
–
100
nA
V
CE = 30 V, I
B
Emitter-base cutoff current
= 0
–
–
10
V
EB = 5 V, I
C
DC current gain
hFE
–
I
I
I
I
C
C
C
C
= 10 µA, VCE = 5 V
SMBT 6428
SMBT 6429
SMBT 6428
SMBT 6429
SMBT 6428
SMBT 6429
SMBT 6428
SMBT 6429
250
500
250
500
250
500
250
500
–
–
–
–
–
–
–
–
–
–
650
1250
–
–
–
–
= 100 µA, VCE = 5 V
=
1 mA, VCE = 5 V
= 10 mA, VCE = 5 V
Collector-emitter saturation voltage1)
VCEsat
V
–
–
–
–
0.2
0.6
I
I
C
= 10 mA, I
= 100 mA, I
B
= 0.5 mA
= 5 mA
C
B
Base-emitter voltage
V
BE(on)
0.56
–
0.66
I
C
= 1 mA, VCE = 5 V
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
SMBT 6428
SMBT 6429
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics
Transition frequency
f
T
100
–
–
–
–
700
3
MHz
pF
I
C
= 5 mA, VCE = 5 V, f = 100 MHz
Output capacitance
CB = 10 V, f = 1 MHz
Input capacitance
EB = 0.5 V, f = 1 MHz
C
C
obo
ibo
V
–
15
V
Semiconductor Group
3
SMBT 6428
SMBT 6429
Total power dissipation Ptot = f (T
* Package mounted on epoxy
A
*; TS
)
Collector-base capacitance CCB0 = f (VCB0
Emitter-base capacitance CEB0 = f (VEB0
)
)
Permissible pulse load Ptot max/Ptot DC = f (t
p)
Transition frequency f
T
= f (I )
C
V
CE = 5 V
Semiconductor Group
4
SMBT 6428
SMBT 6429
Base-emitter saturation voltage
Collector-emitter saturation voltage
I
C
= f (VBEsat), hFE = 40
IC = f (VCEsat), hFE = 40
Collector current I
C
= f (VBE
)
DC current gain hFE = f (I )
C
V
CE = 1 V
VCE = 1 V
Semiconductor Group
5
SMBT 6428
SMBT 6429
Collector cutoff current ICB0 = f (T )
A
V
CB = 30 V
Semiconductor Group
6
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INFINEON
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