SMBTA42M [INFINEON]
NPN Silicon High-Voltage Transistor; NPN硅高压晶体管
| 型号： | SMBTA42M |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon High-Voltage Transistor |
| 文件： | 总4页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBTA 42M
NPN Silicon High-Voltage Transistor
4
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: SMBTA 92M (PNP)
5
3
2
1
VPW05980
Type
Marking Ordering Code Pin Configuration
Package
SMBTA 42M s1D
Q62702-A1243 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595
Maximum Ratings
Parameter
Symbol
Value
300
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Base current
V
V
V
V
CEO
CBO
EBO
300
6
I
I
500
mA
C
100
B
P
T
T
1.5
W
Total power dissipation, T ≤ 83 °C
tot
j
S
Junction temperature
Storage temperature
150
°C
- 65...+150
stg
Thermal Resistance
1)
Junction ambient
R
R
K/W
≤100
≤45
thJA
thJS
Junction - soldering point
2
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm Cu
Semiconductor Group
Semiconductor Group
1
Jun-18-1997
1998-11-01
1
SMBTA 42M
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC characteristics
300
-
-
-
-
-
-
-
-
-
V
Collector-emitter breakdown voltage
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
I = 100 µA, I = 0
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
300
C
B
Emitter-base breakdown voltage
I = 10 µA, I = 0
6
-
E
C
100 nA
20 µA
100 nA
Collector cutoff current
= 200 V, I = 0
I
I
I
V
CB
E
Collector-base cutoff current
= 200 V, T = 150 °C
-
CBO
V
CB
A
Emitter cutoff current
= 3 V, I = 0
-
EBO
V
EB
C
DC current gain 1)
I = 1 mA, V = 10 V
h
-
FE
25
40
40
-
-
-
-
-
-
C
CE
I = 10 mA, V = 10 V
C
CE
I = 30 mA, V = 10 V
C
CE
-
-
0.5
V
Collector-emitter saturation voltage1)
I = 20 mA, I = 2 mA
V
V
CEsat
BEsat
C
B
Base-emitter saturation voltage 1)
I = 20 mA, I = 2 mA
-
-
0.9
C
B
AC Characteristics
Transition frequency
f
50
-
-
-
-
MHz
pF
T
I = 10 mA, V = 20 V, f = 100 MHz
C
CE
3
Collector-base capacitance
= 20 V, f = 1 MHz
C
cb
V
CB
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
Semiconductor Group
2
Jun-18-1997
1998-11-01
2
SMBTA 42M
Total power dissipation P = f (T *;T )
DC current gain h = f (I )
FE C
tot
A
S
* Package mounted on epoxy
V
= 10V
CE
SMBTA 42/43
EHP00844
1800
mW
103
5
h FE
1400
1200
T
S
102
5
P
1000
800
T
A
101
5
600
400
200
0
100
10 -1
5 10 0
5 10 1
5 10 2 mA 10 3
s
0
20
40
60
80
100 120
150
t
p
Ι C
Permissible Pulse Load
Permissible Pulse Load R
= f (t )
thJS
p
P
/ P
= f (t )
totmax
totDC
p
10 2
K/W
10 3
-
/P
10 1
10 2
10 1
10 0
D = 0
0.005
0.01
0.02
0.05
0.1
R
P
0.2
0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
p
Semiconductor Group
Semiconductor Group
3
Jun-18-1997
1998-11-01
3
SMBTA 42M
Collector cutoff current I
= f (T )
Collector current I = f (V )
CBO
A
C
BE
V
= 160V
V
= 10 V
CE
CB
SMBTA 42/43
EHP00843
SMBTA 42/43
EHP00842
103
mA
104
nA
Ι
C
max
103
5
Ι
102
5
CBO
102
5
101
5
typ
101
5
100
5
100
5
10-1
10-1
0
0.5
1.0
V
1.5
0
50
100
C 150
VBE
TA
Semiconductor Group
Semiconductor Group
4
Jun-18-1997
1998-11-01
4
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