SMBTA63 [INFINEON]

PNP Silicon Darlington Transistors; PNP硅达林顿晶体管


型号：	SMBTA63
厂家：	Infineon
描述：	PNP Silicon Darlington Transistors PNP硅达林顿晶体管晶体小信号双极晶体管达林顿晶体管光电二极管
文件：	总4页 (文件大小：147K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PNP Silicon Darlington Transistors

SMBTA 63

SMBTA 64

● High collector current

● High DC current gain

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

SMBTA 63

SMBTA 64

s2U

s2V

Q68000-A2625

Q68000-A2485

SOT-23

Maximum Ratings

Parameter

Symbol

Values

Unit

SMBTA 63

SMBTA 64

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CE0

CB0

EB0

500

Peak collector current

Base current

800

100

200

360

150

Peak base current

Total power dissipation, T^S= 81 ˚C

Junction temperature

Storage temperature range

Ptot

˚C

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 280

≤ 210

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

5.91

Semiconductor Group

SMBTA 63

SMBTA 64

Electrical Characteristics

at T = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

typ.

Unit

min.

max.

DC characteristics

Collector-emitter breakdown voltage

(BR)CE0

(BR)CB0

(BR)EB0

–

= 10 µA

Collector-base breakdown voltage

= 10 µA

Emitter-base breakdown voltage

= 10 µA

Collector-base cutoff current

–

CB0

EB0

100

–

VCB = 30 V

Emitter cutoff current

–

VEB = 10 V

DC current gain¹⁾

5000

–

= 10 mA, VCE = 5 V

SMBTA 63

SMBTA 64

SMBTA 63

SMBTA 64

10000 –

20000 –

= 100 mA, VCE = 5 V

Collector-emitter saturation voltage¹⁾

= 100 mA, I = 0.1 mA

CEsat

BEsat

–

1.5

Base-emitter saturation voltage¹⁾

= 100 mA, I = 0.1 mA

–

AC characteristics

Transition frequency

125

–

MHz

= 50 mA, VCE = 5 V, f = 20 MHz

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

SMBTA 63

SMBTA 64

Total power dissipation Ptot = f (T

*; TS

)

Collector-base capacitance CCB0 = f (VCB0)

* Package mounted on epoxy

Emitter-base capacitance C^EB0= f (VEB0

)

f = 1 MHz

Permissible pulse load P^{tot max}/Ptot DC = f (t

)

Transition frequency f

= f (I )

CE = 5 V

Semiconductor Group

SMBTA 63

SMBTA 64

Base-emitter saturation voltage

Collector-emitter saturation voltage

= f (VBE sat), hFE = 1000

IC = f (VCE sat), hFE = 1000

Collector cutoff current I^CB0= f (T

)

DC current gain h^FE= f (I )

CB = VCE max

VCE = 5 V

Semiconductor Group

相关型号：