SMBTA92 / MMBTA92 [INFINEON]
PNP 硅高压晶体管 ;
| 型号： | SMBTA92 / MMBTA92 |
| 厂家： | 
Infineon |
| 描述： | PNP 硅高压晶体管 高压 晶体管 |
| 文件： | 总7页 (文件大小：524K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBTA92/MMBTA92
PNP Silicon High-Voltage Transistors
• Suitable for video output stages in TV sets
2
3
and switching power supplies
1
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary types:
SMBTA42 / MMBT42 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
s2D
Pin Configuration
Package
SOT23
SMBTA92/MMBTA92
1=B
2=E
3=C
Maximum Ratings
Parameter
Symbol
Value
Unit
300
300
5
500
100
360
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation-
V
V
V
CEO
CBO
EBO
mA
mW
°C
I
C
I
B
P
tot
T ≤ 74 °C
S
150
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 210
Unit
K/W
1)
R
thJS
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-12-19
1
SMBTA92/MMBTA92
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
300
-
-
-
-
-
-
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I = 1 mA, I = 0
C
B
Collector-base breakdown voltage
I = 100 µA, I = 0
300
5
C
E
Emitter-base breakdown voltage
I = 100 µA, I = 0
E
C
Collector-base cutoff current
I
µA
CBO
V
V
= 200 V, I = 0
-
-
-
-
-
-
0.1
20
CB
CB
E
= 200 V, I = 0 , T = 150 °C
E
A
100 nA
Emitter-base cutoff current
I
EBO
V
= 5 V, I = 0
EB
C
1)
-
DC current gain
h
FE
I = 1 mA, V = 10 V
25
40
25
-
-
-
-
-
-
C
CE
I = 10 mA, V = 10 V
C
CE
I = 30 mA, V = 10 V
C
CE
1)
Collector-emitter saturation voltage
I = 20 mA, I = 2 mA
V
-
-
0.5
V
CEsat
C
B
1)
Base emitter saturation voltage
I = 20 mA, I = 2 mA
V
-
-
0.9
BEsat
C
B
AC Characteristics
Transition frequency
50
-
-
-
-
MHz
pF
f
T
I = 20 MHz, V = 10 V, f = 100 MHz
C
CE
6
Collector-base capacitance
= 20 V, f = 1 MHz
C
cb
V
CB
1Pulse test: t < 300µs; D < 2%
2011-12-19
2
SMBTA92/MMBTA92
DC current gain h = ƒ(I )
Operating range I = f(V
)
CEO
FE
C
C
V
= 10 V
T = 25°C, D = 0
CE
A
10 3
mA
SMBTA 92/93
EHP00883
103
5
10 µs
h FE
10 2
10 1
10 0
102
5
100 µs
1 ms
DC
2
101
5
10 -1
10 0
100
10 1
10 2
10 3
10 -1
5 10 0
5 10 1
5 10 2 mA 10 3
V
V
CE
Ι C
Collector current I = ƒ(V )
Collector cutoff current I
= ƒ(T )
C
BE
CBO A
V
= 10V
V
= 200 V
CE
CBO
SMBTA 92/93
EHP00882
SMBTA 92/93
EHP00881
103
mA
104
nA
Ι CB0
Ι
C
max
103
102
5
102
101
101
5
typ
100
5
100
10-1
10-1
0
50
100
150
C
0
0.5
1.0
V
1.5
TA
VBE
2011-12-19
3
SMBTA92/MMBTA92
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V )
cb CB
T
C
V
= 10 V
Emitter-base capacitance C = ƒ(V )
CE
eb
EB
SMBTA 92/93
EHP00878
103
90
pF
MHz
f T
5
70
60
50
40
30
20
10
0
102
CEB
5
CCB
22
101
10 0
5
10 1
5
10 2
5
10 3
V
0
4
8
12
16
mA
V
(V
CB EB
Ι C
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
tot
S
thJS
p
10 3
K/W
400
mW
320
280
240
200
160
120
80
10 2
10 1
10 0
10 -1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
40
0
0
15 30 45 60 75 90 105 120
150
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
°C
S
T
t
p
2011-12-19
4
SMBTA92/MMBTA92
Permissible Pulse Load
P
/P
= ƒ(t )
totmax totDC p
SMBTA 92/93
EHP00879
103
5
Ptotmax
PtotDC
t p
t p
T
D
=
T
102
5
D
0
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
101
5
100
10-6 10-5 10-4 10-3 10-2
s
100
t p
2011-12-19
5
Package SOT23
SMBTA92/MMBTA92
Package Outline
0.1
1
0.1 MAX.
0.1
2.9
B
3
1
2
1)
+0.1
0.4
A
-0.05
0.08...0.15
0...8˚
C
0.95
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2011-12-19
6
SMBTA92/MMBTA92
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-12-19
7
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