概述
规格参数
数据手册
替代型号SN7002N 概述
SIPMOS Small-Signal-Transistor SIPMOS小信号三极管 MOS管 小信号场效应晶体管
SN7002N 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | SOT-23 |
| 包装说明： | SMALL OUTLINE, R-PDSO-G3 | 针数： | 3 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.21.00.95 | 风险等级： | 5.03 |
| Is Samacsys： | N | 其他特性： | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 60 V |
| 最大漏极电流 (Abs) (ID)： | 0.2 A | 最大漏极电流 (ID)： | 0.2 A |
| 最大漏源导通电阻： | 7.5 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss)： | 4.2 pF | JESD-30 代码： | R-PDSO-G3 |
| JESD-609代码： | e3 | 湿度敏感等级： | 1 |
| 元件数量： | 1 | 端子数量： | 3 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 260 |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 0.36 W |
| 认证状态： | Not Qualified | 子类别： | FET General Purpose Power |
| 表面贴装： | YES | 端子面层： | MATTE TIN |
| 端子形式： | GULL WING | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | 40 | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
SN7002N 数据手册
通过下载SN7002N数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Final data
SN7002N
Ò
SIPMOS Small-Signal-Transistor
Feature
Product Summary
V
60
5
V
DS
· N-Channel
R
W
A
DS(on)
· Enhancement mode
· Logic Level
I
0.2
D
SOT-23
· dv/dt rated
Drain
pin 3
Gate
pin1
Source
pin 2
Type
Package
Ordering Code
Tape and Reel Information
E6327: 3000 pcs/reel
E6433: 10000 pcs/reel
Marking
sSN
SOT-23
Q67042-S4185
SN7002N
SN7002N SOT-23
Q67042-S4192
sSN
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T =25°C
A
0.2
T =70°C
A
0.16
0.8
Pulsed drain current
I
D puls
T =25°C
A
6
kV/µs
V
Reverse diode dv/dt
dv/dt
I =0.2A, V =48V, di/dt=200A/µs, T =150°C
jmax
S
DS
Gate source voltage
V
P
±20
Class 1
0.36
GS
ESD Sensitivity (HBM) as per MIL-STD 883
Power dissipation
W
tot
T =25°C
A
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T , T
j
-55... +150
55/150/56
stg
Page 1
2003-03-26
Final data
SN7002N
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
Characteristics
-
-
350 K/W
Thermal resistance, junction - ambient
at minimal footprint
R
thJA
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
60
typ. max.
Static Characteristics
-
-
V
Drain-source breakdown voltage
V
V
(BR)DSS
GS(th)
DSS
V
=0, I =250µA
D
GS
0.8
1.4
1.8
Gate threshold voltage, V = V
GS
DS
I =26µA
D
µA
Zero gate voltage drain current
I
I
V
V
=60V, V =0, T =25°C
-
-
-
-
-
-
0.1
5
DS
DS
GS
j
=60V, V =0, T =150°C
GS
j
10
nA
Gate-source leakage current
GSS
V
=20V, V =0
DS
GS
-
-
3.9
2.5
7.5
5
Drain-source on-state resistance
R
R
W
DS(on)
DS(on)
V
=4.5V, I =0.17A
D
GS
Drain-source on-state resistance
V
=10V, I =0.5A
D
GS
Page 2
2003-03-26
Final data
SN7002N
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Dynamic Characteristics
V
³ 2*I *R ,
DS(on)max
0.09
0.17
-
S
Transconductance
g
DS
D
fs
I =0.16A
D
V
=0, V =25V,
-
-
-
-
-
-
-
34
7.2
2.8
2.4
3.2
5.3
3.6
45
pF
Input capacitance
Output capacitance
C
GS
DS
iss
f=1MHz
9.6
4.2
C
oss
rss
Reverse transfer capacitance C
V
=30V, V =10V,
3.6 ns
Turn-on delay time
Rise time
t
d(on)
DD
GS
I =0.5A, R =6W
4.8
8
t
D
G
r
Turn-off delay time
Fall time
t
d(off)
5.4
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
V
=48V, I =0.5A
-
-
-
0.14
0.42
1
0.21 nC
0.63
Q
Q
Q
DD
D
gs
gd
g
V
=48V, I =0.5A,
1.5
DD
D
V
=0 to 10V
GS
V
=48V, I = 0.5 A
-
-
4.5
-
-
V
A
Gate plateau voltage
V
DD
D
(plateau)
Reverse Diode
T =25°C
0.2
Inverse diode continuous
forward current
I
S
A
-
-
-
-
-
0.8
1.2
Inv. diode direct current, pulsedI
SM
V
=0, I = I
0.83
14.2
5.9
V
Inverse diode forward voltage V
SD
GS
F
S
V =30V, I =l ,
21.3 ns
8.8 nC
Reverse recovery time
t
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Q
rr
F
Page 3
2003-03-26
Final data
SN7002N
1 Power dissipation
2 Drain current
I = f (T )
P
= f (T )
tot
A
D
A
parameter: V ³ 10 V
GS
SN7002N
SN7002N
0.38
0.22
W
A
0.32
0.28
0.24
0.2
0.18
0.16
0.14
0.12
0.1
0.16
0.12
0.08
0.04
0
0.08
0.06
0.04
0.02
0
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
°C
°C
T
T
A
A
3 Safe operating area
I = f ( V
4 Transient thermal impedance
Z = f (t )
thJA
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
A
p
10 1
SN7002N
SN7002N
10 3
K/W
A
10 2
t
= 200.0µs
1 ms
10 0
p
10 1
10 0
10 -1
10 -1
10 -2
10 -3
10 ms
D = 0.50
0.20
0.10
0.05
0.02
10 -2
DC
0.01
single pulse
10 -3
10 0
10 1
10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
V
t
p
DS
Page 4
2003-03-26
Final data
SN7002N
5 Typ. output characteristic
I = f (V )
6 Typ. drain-source on resistance
= f (I )
R
D
DS
DS(on)
D
parameter: T = 25 °C, V
parameter: Tj = 25 °C, V
GS
j
GS
7.5
1
3.1V
3.5V
3.7V
4.1V
4.5V
5V
6V
7V
10V
10V
7V
6V
5V
4.5V
4.0V
3.7V
3.5V
3.0V
W
A
6
5.25
4.5
3.75
3
0.75
0.625
0.5
0.375
0.25
0.125
0
2.25
1.5
0.75
0
V
A
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
1
V
I
DS
D
7 Typ. transfer characteristics
I = f ( V ); V ³ 2 x I x R
8 Typ. forward transconductance
g = f(I )
D
GS
DS
D
DS(on)max
fs
D
parameter: Tj = 25 °C
parameter: Tj = 25 °C
1
0.4
A
S
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.3
0.25
0.2
0.15
0.1
0.05
0
V
A
0
0.8
1.6
2.4
3.2
4
4.8
6
0
0.2
0.4
0.6
0.8
1.1
V
I
GS
D
Page 5
2003-03-26
Final data
SN7002N
9 Drain-source on-state resistance
= f (T )
10 Typ. gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter : I = 0.5 A, V = 10 V
parameter: V = V ; I =26µA
GS DS D
D
GS
SN7002N
2.2
V
15
W
98%
1.8
1.6
1.4
1.2
1
12
11
10
9
typ.
2%
8
7
6
98%
0.8
0.6
0.4
0.2
0
5
4
3
typ
2
1
0
°C
°C
-60
-20
20
60
100
180
-60
-20
20
60
100
160
T
T
j
j
11 Typ. capacitances
C = f (V )
12 Forward character. of reverse diode
I = f (V )
DS
F
SD
parameter: V =0, f=1 MHz, Tj = 25 °C
parameter: T
GS
j
10 2
10 0
SN7002N
A
Ciss
pF
10 -1
10 1
Coss
10 -2
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 0
10 -3
V
0
5
10
15
20
30
0
0.4
0.8
1.2
1.6
2
2.4
3
V
V
V
SD
DS
Page 6
2003-03-26
Final data
SN7002N
13 Typ. gate charge
= f (Q ); parameter: V
14 Drain-source breakdown voltage
V
,
V
= f (T )
GS
G
DS
(BR)DSS
j
I = 0.2 A pulsed, T = 25 °C
D
j
SN7002N
SN7002N
16
V
72
V
68
66
64
62
60
58
56
54
12
10
8
0.2 VDS max
0.5 VDS max
0.8 VDS max
6
4
2
0
nC
0
0.4
0.8
1.2
1.6
2
2.8
-60
-20
20
60
100
180
°C
Q
T
j
G
Page 7
2003-03-26
Final data
SN7002N
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
2003-03-26
SN7002N 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| 2N7002-7-F | DIODES | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 功能相似 |
|
| 2N7002K-7 | DIODES | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 功能相似 |
|
| BSS123-7-F | DIODES | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 功能相似 |
|
SN7002N 相关器件
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| SN7002NE627 | TYSEMI | N-CHANNEL SOT-23 | 获取价格 |
|
| SN7002NE6327 | ROCHESTER | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC PACKAGE-3 | 获取价格 |
|
| SN7002NE6327 | INFINEON | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 | 获取价格 |
|
| SN7002NE6327XT | INFINEON | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 | 获取价格 |
|
| SN7002NE6433 | INFINEON | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 |
|
| SN7002NH6327 | INFINEON | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | 获取价格 |
|
| SN7002NH6433XTMA1 | INFINEON | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | 获取价格 |
|
| SN7002NL6327 | INFINEON | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 | 获取价格 |
|
| SN7002NL6433 | INFINEON | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 | 获取价格 |
|
| SN7002N_09 | INFINEON | SIPMOS Small-Signal-Transistor Feature Enhancement mode Logic Level | 获取价格 |
|
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