SP0000-88131 [INFINEON]
OptiMOS㈢-T Power-Transistor; OptiMOS㈢ -T电源晶体管
| 型号： | SP0000-88131 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS㈢-T Power-Transistor |
| 文件： | 总8页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB80N06S3L-08
IPI80N06S3L-08, IPP80N06S3L-08
OptiMOS®-T Power-Transistor
Product Summary
VDS
Features
55
7.6
80
V
• N-channel - Logic Level - Enhancement mode
R
DS(on),max (SMD version)
mΩ
A
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
I D
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 2 (HBM)
EIA/JESD22-A114-B
Type
Package
Ordering Code Marking
IPB80N06S3L-08
IPI80N06S3L-08
IPP80N06S3L-08
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
SP0000-88128
SP0000-88131
SP0000-88127
3N06L08
3N06L08
3N06L08
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25 °C, VGS=10 V
T C=100 °C,
80
61
A
V
GS=10 V2)
Pulsed drain current2)
I D,pulse
EAS
T C=25 °C
I D=40 A
320
170
Avalanche energy, single pulse3)
mJ
Drain gate voltage2)
Gate source voltage4)
VDG
55
±16
V
VGS
V
Ptot
T C=25 °C
Power dissipation
105
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... +175
55/175/56
Rev. 1.0
page 1
2005-09-16
IPB80N06S3L-08
IPI80N06S3L-08, IPP80N06S3L-08
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
1.4
62
K/W
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area5)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0 V, I D= 1 mA
DS=VGS, I D=55 µA
Drain-source breakdown voltage
Gate threshold voltage
55
-
-
V
1.2
1.7
2.2
V
DS=55 V, VGS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.01
1
1
µA
T j=25 °C
V
DS=55 V, VGS=0 V,
100
T j=125 °C2)
I GSS
V
V
GS=16 V, VDS=0 V
GS=5 V, I D=29 A
Gate-source leakage current
-
-
1
100 nA
R DS(on)
Drain-source on-state resistance
11.5
14.2
13.9
7.9
mΩ
V
GS=5 V, I D=29 A,
-
-
-
11.2
6.5
SMD version
V
GS=10 V, I D=43 A
V
GS=10 V, I D=43 A,
6.2
7.6
SMD version
Rev. 1.0
page 2
2005-09-16
IPB80N06S3L-08
IPI80N06S3L-08, IPP80N06S3L-08
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
6475
812
775
16
-
-
-
-
-
-
-
pF
ns
V
GS=0 V, VDS=25 V,
f =1 MHz
V
V
DD=27.5 V,
GS=10 V, I D=80 A,
35
t d(off)
t f
Turn-off delay time
Fall time
39
R G=3.5 Ω
25
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
34
16
89
4.9
-
nC
Q gd
-
134
-
V
V
DD=11 V, I D=80 A,
GS=0 to 10 V
Q g
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
80
T C=25 °C
I S,pulse
320
V
GS=0 V, I F=80 A,
VSD
Diode forward voltage
Reverse recovery time2)
Reverse recovery charge2)
0.6
0.9
45
53
1.3
V
T j=25 °C
VR=27.5 V, I F=I S,
diF/dt =100 A/µs
t rr
-
-
ns
nC
Q rr
-
-
1) Current is limited by bondwire; with an R thJC = 1.4 K/W the chip is able to carry 86 A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) See diagrams 12 and 13.
4) Qualified at -5V and +16V.
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2005-09-16
IPB80N06S3L-08
IPI80N06S3L-08, IPP80N06S3L-08
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 4 V
I D = f(T C); VGS ≥ 4 V
120
100
80
60
40
20
0
100
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
Z
parameter: D =t p/T
101
1000
1 µs
limited by on-state
resistance
100
0.5
10 µs
100 µs
100
10
1
0.1
1 ms
10-1
0.05
0.01
10-2
single pulse
10-3
10-7
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
V
DS [V]
t
p [s]
Rev. 1.0
page 4
2005-09-16
IPB80N06S3L-08
IPI80N06S3L-08, IPP80N06S3L-08
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
DS(on) = f(I D); T j = 25 °C
R
parameter: VGS
16
160
10 V
140
120
100
80
14
12
10
8
5 V
5 V
6 V
4.5 V
4 V
60
8 V
40
10 V
6
3.5 V
3 V
20
0
4
0
0
1
2
3
4
5
6
50
100
150
I
D [A]
V
DS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 4 V
parameter: T j
8 Typ. drain-source on-state resistance
R
DS(on) = f(T j); I D = 80 A; VGS = 10 V
160
140
120
100
80
13
11
9
-55 °C
25 °C
175 °C
7
60
40
5
20
0
3
0
1
2
3
4
5
6
-60
-20
20
60
100
140
180
V
GS [V]
T j [°C]
Rev. 1.0
page 5
2005-09-16
IPB80N06S3L-08
IPI80N06S3L-08, IPP80N06S3L-08
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
104
3
Ciss
2.5
2
Coss
Crss
550µA
1.5
1
103
55µA
0.5
0
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V
DS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
AV = f(t AV
IF = f(VSD)
I
)
parameter: T j
parameter: Tj(start)
103
100
25°C
100°C
102
150°C
10
25 °C
175 °C
101
100
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
V
SD [V]
t
AV [µs]
Rev. 1.0
page 6
2005-09-16
IPB80N06S3L-08
IPI80N06S3L-08, IPP80N06S3L-08
13 Typical avalanche Energy
AS = f(T j)
14 Drain-source breakdown voltage
BR(DSS) = f(T j); I D = 1 mA
E
V
parameter: I D
66
64
62
60
58
56
54
52
50
48
46
400
350
20 A
300
250
30 A
200
40 A
150
100
50
0
0
50
100
150
200
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
15 Typ. gate charge
GS = f(Q gate); I D = 80 A pulsed
16 Gate charge waveforms
V
parameter: VDD
12
VGS
11 V
44 V
10
8
Qg
6
4
2
Qgate
Qgd
Qgs
0
0
50
100
150
200
Q
gate [nC]
Rev. 1.0
page 7
2005-09-16
IPB80N06S3L-08
IPI80N06S3L-08, IPP80N06S3L-08
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2005-09-16
相关型号：
SP000010559
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
INFINEON
SP000010631
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
INFINEON
SP000010632
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
INFINEON
SP000010865
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
INFINEON
©2020 ICPDF网 联系我们和版权申明