SP000010874 [INFINEON]
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3;
| 型号： | SP000010874 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3 放大器 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCV26, BCV46
PNP Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
2
1
3
• Complementary types: BCV27, BCV47 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
BCV26
BCV46
Marking
FDs
FEs
Pin Configuration
Package
SOT23
SOT23
1=B
1=B
2=E
2=E
3=C
3=C
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BCV26
BCV46
V
V
V
CEO
CBO
EBO
30
60
Collector-base voltage
BCV26
BCV46
40
80
10
500
800
100
200
360
Emitter-base voltage
Collector current
mA
I
C
Peak collector current, t ≤ 10 ms
I
CM
I
B
p
Base current
Peak base current
Total power dissipation-
I
BM
mW
°C
P
tot
T ≤ 74 °C
S
150
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
2011-10-05
1
BCV26, BCV46
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 210
Unit
K/W
1)
R
thJS
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I = 10 mA, I = 0 , BCV26
30
60
-
-
-
-
C
B
I = 10 mA, I = 0 , BCV46
C
B
Collector-base breakdown voltage
I = 100 µA, I = 0 , BCV26
40
80
-
-
-
-
C
E
I = 100 µA, I = 0 , BCV46
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
10
-
-
E
C
Collector-base cutoff current
I
µA
CBO
V
V
V
V
= 30 , I = 0 , BCV26
-
-
-
-
-
-
-
-
0.1
0.1
10
CB
CB
CB
CB
E
= 60 , I = 0 , BCV46
E
= 30 , I = 0 , T = 150 °C, BCV26
E
A
= 60 , I = 0 , T = 150 °C, BCV46
10
E
A
-
-
100 nA
Emitter-base cutoff current
I
EBO
V
= 4 V, I = 0
EB
C
1)
-
DC current gain
h
FE
I = 100 µA, V = 1 V, BCV26
4000
2000
10000
4000
20000
10000
4000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
C
CE
I = 100 µA, V = 1 V, BCV46
C
CE
I = 10 mA, V = 5 V, BCV26
C
CE
I = 10 mA, V = 5 V, BCV46
C
CE
I = 100 mA, V = 5 V, BCV26
C
CE
I = 100 mA, V = 5 V, BCV46
C
CE
I = 0.5 A, V = 5 V, BCV26
C
CE
I = 0.5 A, V = 5 V, BCV46
2000
C
CE
1)
Collector-emitter saturation voltage
I = 100 mA, I = 0.1 mA
V
-
-
1
V
CEsat
C
B
1)
Base emitter saturation voltage
I = 100 mA, I = 0.1 mA
V
-
-
1.5
BEsat
C
B
2011-10-05
2
BCV26, BCV46
1
Pulse test: t < 300µs; D < 2%
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
-
-
200
4.5
-
-
MHz
pF
Transition frequency
f
T
I = 50 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
2011-10-05
3
BCV26, BCV46
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
I = ƒ(V ), h = 1000
FE
C
V
= 5 V
CE
C
CEsat
FE
BCV 26/46
EHP00296
BCV 26/46
EHP00298
103
mA
106
5
hFE
Ι C
150 ˚C
25 ˚C
-50 ˚C
125 ˚C
25 ˚C
105
5
102
5
-55 ˚C
104
5
101
5
103
100
10-1
100
101
102 mA 103
0
0.5
1.0
1.5
V
Ι C
VCEsat
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 1000
V
= V
C
BEsat
FE
CB CEmax
BCV 26/46
EHP00295
BCV 26/46
EHP00297
103
mA
104
nA
Ι C
Ι CBO
max
150 ˚C
25 ˚C
103
102
101
100
-50 ˚C
102
5
typ
101
5
100
0
1.0
2.0
3.0
0
50
100
150
˚C
TA
V
VBEsat
2011-10-05
4
BCV26, BCV46
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V
)
T
C
cb
CB
V
= 5 V
Emitter-base capacitance C = ƒ(V )
CE
eb EB
BCV 26/46
EHP00294
103
16
pF
f T
MHz
12
10
8
102
5
CEB
6
4
CCB
2
101
0
100
101
102
mA
Ι C
103
V
0
4
8
12
16
22
V
(V
CB EB
Total power dissipation P = ƒ(T )
Permissible Pulse Load
tot
S
P
/P
= ƒ(t )
totmax totDC
p
BCV 26/46
EHP00292
103
400
Ptotmax
PtotDC
t p
mW
5
t p
T
D
=
T
300
250
200
150
100
50
102
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
101
5
100
0
10-6 10-5 10-4 10-3 10-2
s
100
0
15 30 45 60 75 90 105 120
150
°C
S
T
t p
2011-10-05
5
Package SOT23
BCV26, BCV46
Package Outline
0.1
1
0.1 MAX.
0.1
2.9
B
3
1
2
1)
+0.1
0.4
A
-0.05
0.08...0.15
0...8˚
C
0.95
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2011-10-05
6
BCV26, BCV46
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-10-05
7
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