SP000100774 概述
Insulated Gate Bipolar Transistor, IGBT
SP000100774 规格参数
生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.73 |
Base Number Matches: | 1 |
SP000100774 数据手册
通过下载SP000100774数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R12KS4
62mmꢀC-SerienꢀModulꢀmitꢀschnellemꢀIGBT2ꢀfürꢀhochfrequentesꢀSchaltenꢀ
62mmꢀC-seriesꢀmoduleꢀwithꢀtheꢀfastꢀIGBT2ꢀforꢀhigh-frequencyꢀswitchingꢀ
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极-发射极电压
Collector-emitterꢀvoltage
Tvj = 25°C
VCES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1200
ꢀ
ꢀ
ꢀ
V
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 60°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC
300
370
A
A
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
ICRM
Ptot
600
1950
+/-20
A
总功率损耗
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 150
ꢀ W
栅极-发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
ꢀ
VGES
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极-发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
3,20 3,75
3,85
V
V
VCE sat
VGEth
QG
栅极阈值电压
Gateꢀthresholdꢀvoltage
IC = 12,0 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
4,5
5,5
3,20
1,0
20,0
1,40
ꢀ
6,5
V
µC
Ω
栅极电荷
Gateꢀcharge
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
内部栅极电阻
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
输入电容
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
Cres
ICES
IGES
td on
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
5,0 mA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
ꢀ
400 nA
µs
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGon = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
0,10
0,11
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGon = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
0,06
0,07
µs
µs
tr
td off
tf
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGoff = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
0,53
0,55
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGoff = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
0,03
0,04
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 300 A, VCE = 600 V, LS = 60 nH
VGE = ±15 V, di/dt = 5000 A/µs
RGon = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
mJ
mJ
Eon
Eoff
25,0
15,0
关断损耗能量ꢀ(每脉冲)
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 300 A, VCE = 600 V, LS = 60 nH
VGE = ±15 V, du/dt = 7500 V/µs
RGoff = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
mJ
mJ
ꢀ
ꢀ
短路数据
SCꢀdata
VGE ≤ 15 V, VCC = 900 V
ISC
ꢀ
VCEmax = VCES -LsCE ·di/dt
每个ꢀIGBTꢀ/ꢀperꢀIGBT
每个ꢀIGBTꢀ/ꢀperꢀIGBT
tP ≤ 10 µs, Tvj = 125°C
2000
A
结-外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
0,064 K/W
K/W
外壳-散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,03
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
125
°C
preparedꢀby:ꢀMK
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ3.2
1
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R12KS4
二极管,逆变器ꢀ/ꢀDiode,ꢀInverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Tvj = 25°C
VRRM
IF
IFRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
1200
300
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
ꢀ
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
tP = 1 ms
600
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
18000
ꢀ A²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
2,00 2,55
1,70
V
V
VF
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 300 A, - diF/dt = 5000 A/µs (Tvj=125°C) Tvj = 25°C
230
300
A
A
VR = 600 V
VGE = -15 V
Tvj = 125°C
IRM
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
恢复电荷
Recoveredꢀcharge
IF = 300 A, - diF/dt = 5000 A/µs (Tvj=125°C) Tvj = 25°C
18,0
42,0
µC
µC
VR = 600 V
VGE = -15 V
Tvj = 125°C
Qr
反向恢复损耗(每脉冲)
Reverseꢀrecoveryꢀenergy
IF = 300 A, - diF/dt = 5000 A/µs (Tvj=125°C) Tvj = 25°C
7,00
15,0
mJ
mJ
VR = 600 V
VGE = -15 V
Tvj = 125°C
Erec
结-外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
每个二极管ꢀ/ꢀperꢀdiode
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
0,06
ꢀ
0,10 K/W
K/W
外壳-散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
125
°C
preparedꢀby:ꢀMK
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ3.2
2
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R12KS4
模块ꢀ/ꢀModule
绝缘测试电压
Isolationꢀtestꢀvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2,5
Cu
ꢀ kV
模块基板材料
Materialꢀofꢀmoduleꢀbaseplate
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
内部绝缘
Internalꢀisolation
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)
ꢀ
Al2O3
爬电距离
Creepageꢀdistance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
29,0
23,0
ꢀ
ꢀ
ꢀ mm
ꢀ mm
电气间隙
Clearance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
23,0
11,0
相对电痕指数
Comperativeꢀtrackingꢀindex
ꢀ
CTI
> 400
ꢀ
ꢀ
min. typ. max.
外壳-散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
每个模块ꢀ/ꢀperꢀmodule
RthCH
LsCE
RCC'+EE'
Tstg
ꢀ
0,01
K/W
nH
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀ/ꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
杂散电感,模块
Strayꢀinductanceꢀmodule
ꢀ
ꢀ
ꢀ
20
ꢀ
ꢀ
模块引线电阻,端子-芯片
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip
TCꢀ=ꢀ25°C,ꢀ每个开关ꢀ/ꢀperꢀswitch
0,70
mΩ
储存温度
Storageꢀtemperature
ꢀ
-40
3,00
2,5
ꢀ
ꢀ
125 °C
6,00 Nm
5,0 Nm
模块安装的安装扭距
Mountingꢀtorqueꢀforꢀmodulꢀmounting
螺丝ꢀM6ꢀ根据相应的应用手册进行安装
ScrewꢀM6ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
M
-
-
端子联接扭距
Terminalꢀconnectionꢀtorque
螺丝ꢀM6ꢀ根据相应的应用手册进行安装
ScrewꢀM6ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
M
重量
Weight
ꢀ
G
340
ꢀ
g
preparedꢀby:ꢀMK
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ3.2
3
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R12KS4
输出特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
输出特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
)
ICꢀ=ꢀfꢀ(VCE)
VGEꢀ=ꢀ15ꢀV
Tvjꢀ=ꢀ125°C
600
600
Tvj = 25°C
VGE =8V
Tvj = 125°C
VGE =9V
VGE =10V
VGE =12V
VGE =15V
VGE =20V
500
400
300
200
100
0
500
400
300
200
100
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
VCE [V]
VCE [V]
传输特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
开关损耗ꢀIGBT,ꢀ逆变器ꢀ(典型)
transferꢀcharacteristicꢀꢀIGBT,Inverter(typical)
switchingꢀlossesꢀꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(IC),ꢀEoffꢀ=ꢀfꢀ(IC)
ICꢀ=ꢀfꢀ(VGE
)
VCEꢀ=ꢀ20ꢀV
VGEꢀ=ꢀ±15ꢀV,ꢀRGonꢀ=ꢀ3ꢀΩ,ꢀRGoffꢀ=ꢀ3ꢀΩ,ꢀVCEꢀ=ꢀ600ꢀV
600
70
Tvj = 25°C
Tvj = 125°C
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
60
50
40
30
20
10
0
500
400
300
200
100
0
5
6
7
8
9
10
11
12
0
100
200
300
IC [A]
400
500
600
VGE [V]
preparedꢀby:ꢀMK
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ3.2
4
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R12KS4
开关损耗ꢀIGBT,ꢀ逆变器ꢀ(典型)
switchingꢀlossesꢀꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(RG),ꢀEoffꢀ=ꢀfꢀ(RG)
瞬态热阻抗ꢀꢀIGBT,ꢀ逆变器
transientꢀthermalꢀimpedanceꢀꢀIGBT,Inverter
ZthJCꢀ=ꢀfꢀ(t)
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ300ꢀA,ꢀVCEꢀ=ꢀ600ꢀV
140
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
ZthJC : IGBT
120
100
80
60
40
20
0
0,1
0,01
i:
ri[K/W]: 0,00384 0,02112 0,02048 0,01856
τi[s]: 0,01 0,02 0,05 0,1
1
2
3
4
0,001
0,001
0
2
4
6
8
10 12 14 16 18 20
RG [Ω]
0,01
0,1
t [s]
1
10
反偏安全工作区ꢀꢀIGBT,ꢀ逆变器ꢀ(RBSOA)
正向偏压特性ꢀꢀ二极管,逆变器(典型)
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀꢀIGBT,Inverterꢀ(RBSOA)
forwardꢀcharacteristicꢀofꢀꢀDiode,ꢀInverterꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
)
IFꢀ=ꢀfꢀ(VF)
VGEꢀ=ꢀ±15ꢀV,ꢀRGoffꢀ=ꢀ3ꢀΩ,ꢀTvjꢀ=ꢀ125°C
700
600
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
650
600
550
500
450
400
350
300
250
200
150
100
50
500
400
300
200
100
0
0
0
200
400
600
800
1000 1200 1400
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6
VCE [V]
VF [V]
preparedꢀby:ꢀMK
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ3.2
5
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R12KS4
开关损耗ꢀ二极管,逆变器ꢀ(典型)
switchingꢀlossesꢀꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
开关损耗ꢀ二极管,逆变器ꢀ(典型)
switchingꢀlossesꢀꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
RGonꢀ=ꢀ3ꢀΩ,ꢀVCEꢀ=ꢀ600ꢀV
IFꢀ=ꢀ300ꢀA,ꢀVCEꢀ=ꢀ600ꢀV
20
20
Erec, Tvj = 125°C
Erec, Tvj = 125°C
18
18
16
14
12
10
8
16
14
12
10
8
6
6
4
4
2
2
0
0
0
100
200
300
IF [A]
400
500
600
0
2
4
6
8
10 12 14 16 18 20
RG [Ω]
瞬态热阻抗ꢀꢀ二极管,逆变器
transientꢀthermalꢀimpedanceꢀꢀDiode,ꢀInverter
ZthJCꢀ=ꢀfꢀ(t)
1
ZthJC : Diode
0,1
0,01
i:
1
2
3
4
ri[K/W]: 0,006 0,033 0,032 0,029
τi[s]:
0,01 0,02 0,05 0,1
0,001
0,001
0,01
0,1
t [s]
1
10
preparedꢀby:ꢀMK
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ3.2
6
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R12KS4
接线图ꢀ/ꢀcircuit_diagram_headline
封装尺寸ꢀ/ꢀpackageꢀoutlines
j
n
j
n
i
i
preparedꢀby:ꢀMK
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ3.2
7
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R12KS4
使用条件和条款
ꢀ
使用条件和条款
产品规格书中的数据是专门为技术人员提供的,您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合
产品规格书中所描述的产品特性是被保证的,任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外,产品和产品的特性没有任何的保证
请注意安装及应用指南中的信息。
如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话,请联系我们负责你的销售部门(详情查询
www.infineon.comꢀ)。对那些特别感兴趣的问题我们将提供相应的应用手册
由于技术需要,我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门
如果您想将我们的产品用于航天,健康,危及生命或者生命维持等应用,请申明。
请注意,对这类应用我们强烈建议
-执行联合的风险和质量评估
-得到质量协议的结论
-ꢀ建立联合的测试和出厂产品检查,ꢀ我们可以根据测试的实际情况供货
如果有必要,请根据实际需要将类似的说明给你的客户
保留产品规格书的修改权
Termsꢀ&ꢀConditionsꢀofꢀusage
ꢀ
Theꢀdataꢀcontainedꢀinꢀthisꢀproductꢀdataꢀsheetꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀYouꢀandꢀyourꢀtechnicalꢀdepartmentsꢀwill
haveꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproductꢀdataꢀwithꢀrespectꢀtoꢀsuch
application.
Thisꢀproductꢀdataꢀsheetꢀisꢀdescribingꢀtheꢀcharacteristicsꢀofꢀthisꢀproductꢀforꢀwhichꢀaꢀwarrantyꢀisꢀgranted.ꢀAnyꢀsuchꢀwarrantyꢀisꢀgranted
exclusivelyꢀpursuantꢀtheꢀtermsꢀandꢀconditionsꢀofꢀtheꢀsupplyꢀagreement.ꢀThereꢀwillꢀbeꢀnoꢀguaranteeꢀofꢀanyꢀkindꢀforꢀtheꢀproductꢀandꢀits
characteristics.ꢀTheꢀinformationꢀinꢀtheꢀvalidꢀapplication-ꢀandꢀassemblyꢀnotesꢀofꢀtheꢀmoduleꢀmustꢀbeꢀconsidered.
Shouldꢀyouꢀrequireꢀproductꢀinformationꢀinꢀexcessꢀofꢀtheꢀdataꢀgivenꢀinꢀthisꢀproductꢀdataꢀsheetꢀorꢀwhichꢀconcernsꢀtheꢀspecificꢀapplicationꢀof
ourꢀproduct,ꢀpleaseꢀcontactꢀtheꢀsalesꢀoffice,ꢀwhichꢀisꢀresponsibleꢀforꢀyouꢀ(ꢀseeꢀꢀwww.infineon.comꢀ).ꢀForꢀthoseꢀthatꢀareꢀspecifically
interestedꢀweꢀmayꢀprovideꢀapplicationꢀnotes.ꢀ
Dueꢀtoꢀtechnicalꢀrequirementsꢀourꢀproductꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestionꢀpleaseꢀcontactꢀthe
salesꢀoffice,ꢀwhichꢀisꢀresponsibleꢀforꢀyou.
ShouldꢀyouꢀintendꢀtoꢀuseꢀtheꢀProductꢀinꢀaviationꢀapplications,ꢀinꢀhealthꢀorꢀliveꢀendangeringꢀorꢀlifeꢀsupportꢀapplications,ꢀpleaseꢀnotify.ꢀPlease
note,ꢀthatꢀforꢀanyꢀsuchꢀapplicationsꢀweꢀurgentlyꢀrecommend
-ꢀtoꢀperformꢀjointꢀRiskꢀandꢀQualityꢀAssessments;
-ꢀtheꢀconclusionꢀofꢀQualityꢀAgreements;
-ꢀtoꢀestablishꢀjointꢀmeasuresꢀofꢀanꢀongoingꢀproductꢀsurvey,ꢀandꢀthatꢀweꢀmayꢀmakeꢀdeliveryꢀdependedꢀon
ꢀꢀtheꢀrealizationꢀofꢀanyꢀsuchꢀmeasures.
Ifꢀandꢀtoꢀtheꢀextentꢀnecessary,ꢀpleaseꢀforwardꢀequivalentꢀnoticesꢀtoꢀyourꢀcustomers.
Changesꢀofꢀthisꢀproductꢀdataꢀsheetꢀareꢀreserved.
preparedꢀby:ꢀMK
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ3.2
8
SP000100774 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
SP000101744 | INFINEON | Insulated Gate Bipolar Transistor, | 获取价格 | |
SP000103248 | INFINEON | CoolMOS Power Transistor | 获取价格 | |
SP000103249 | INFINEON | CoolMOS Power Transistor | 获取价格 | |
SP000103250 | INFINEON | CoolMOS Power Transistor | 获取价格 | |
SP000103251 | INFINEON | CoolMOS Power Transistor | 获取价格 | |
SP000103500 | INFINEON | Microcontroller, 16-Bit, OTPROM, 20MHz, CMOS, PQFP80, MQFP-80 | 获取价格 | |
SP0002-04966 | INFINEON | IGBT Chip in Fieldstop -technology | 获取价格 | |
SP0002-18151 | INFINEON | OptiMOS㈢ - T Power-Transistor | 获取价格 | |
SP0002-18153 | INFINEON | OptiMOS㈢ - T Power-Transistor | 获取价格 | |
SP0002-18154 | INFINEON | OptiMOS㈢ Power-Transistor | 获取价格 |
SP000100774 相关文章
- 2024-09-20
- 6
- 2024-09-20
- 9
- 2024-09-20
- 8
- 2024-09-20
- 6