SP000221227 [INFINEON]
Smart Highside Power Switch for Industrial Applications; 海赛德智能电源开关的工业应用
| 型号： | SP000221227 |
| 厂家： | 
Infineon |
| 描述： | Smart Highside Power Switch for Industrial Applications |
| 文件： | 总15页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
PROFET ITS 410 E2
Smart Highside Power Switch
for Industrial Applications
Product Summary
Overvoltage protection Vbb(AZ)
65
4.7 ... 42
220
V
V
Features
V
Operating voltage
bb(on)
•
•
•
•
•
•
•
•
Overload protection
On-state resistance
Load current (ISO)
Current limitation
R
I
ON
L(ISO)
L(SCr)
mΩ
Current limitation
1.8
A
Short circuit protection
Thermal shutdown
I
5
A
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Operating temperature Ta
-30…+85 °C
1
)
Reverse battery protection
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
PG-TO220AB/5
•
•
•
•
•
5
5
Loss of ground and loss of V protection
bb
1
Straight leads
Electrostatic discharge (ESD) protection
Standard
Application
•
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial
applications
•
•
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V
bb
3
Voltage
source
Gate
Overvoltage
protection
Current
limit
protection
VLogic
OUT
Limit for
Charge pump
Level shifter
Voltage
sensor
unclamped
ind. loads
5
Temperature
sensor
Rectifier
IN
2
4
Open load
detection
Load
Logic
ESD
ST
Short circuit
detection
PROFET
GND
1
Load GND
Signal GND
1
)
With external current limit (e.g. resistor R
=150 Ω) in GND connection, resistors in series with IN and ST
GND
connections, reverse load current limited by connected load.
Infineon Technologies AG
1 of 15
2006-Mar-28
®
PROFET ITS 410 E2
Pin
1
2
3
4
Symbol
GND
IN
Function
Logic ground
-
I
+
S
O
Input, activates the power switch in case of logical high signal
Positive power supply voltage, the tab is shorted to this pin
Diagnostic feedback, low on failure
V
bb
ST
5
OUT
Output to the load
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Values
Unit
V
Supply voltage (overvoltage protection see page 3)
Vbb
65
2
4)
)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V VLoad dump
100
V
RI3)= 2 Ω, RL= 6.6 Ω, td= 400 ms, IN= low or high
Load current (Short circuit current, see page 4)
Junction temperature
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
IL
Tj
Ta
Tstg
Ptot
self-limited
+150
-30 ...+85
-40 …+105
A
°C
50
W
Inductive load switch-off energy dissipation, single pulse
Vbb =12V, Tj,start =150°C, TC =150°C const.
IL = 1.8 A, ZL = 2.3H, 0 Ω: EAS
4.5
J
kV
Electrostatic discharge capability (ESD)
IN: VESD
1
(Human Body Model)
all other pins:
2
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
VIN
IIN
IST
-0.5 ... +6
±5.0
V
mA
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
±5.0
Thermal Characteristics
Parameter and Conditions
Symbol
chip - case: RthJC
Values
typ
Unit
min
--
max
2.5
75
K/W
Thermal resistance
--
--
R
thJA
junction - ambient (free air):
--
2
)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3
4
)
)
R = internal resistance of the load dump test pulse generator
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Infineon Technologies AG
2
2006-Mar-28
®
PROFET ITS 410 E2
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
--
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 1.6 A
RON
T=25 °C:
190
390
220
440
mΩ
j
T=150 °C:
j
Nominal load current, ISO Norm (pin 3 to 5)
V
ON = 0.5 V, T = 85 °C
IL(ISO)
1.6
--
1.8
--
--
1
A
mA
C
Output current (pin 5) while GND disconnected or
IL(GNDhigh)
GND pulled up, V =30 V, V = 0, see diagram
bb
IN
page 7, T =-40...+150°C
j
Turn-on time
Turn-off time
IN
IN
to 90% VOUT: ton
to 10% VOUT: toff
12
5
--
--
125
85
µs
RL = 12 Ω, T =-40...+150°C
j
Slew rate on
dV /dton
-dV/dtoff
--
--
--
--
3 V/µs
6 V/µs
10 to 30% VOUT, RL = 12 Ω, T =-40...+150°C
j
Slew rate off
70 to 40% VOUT, RL = 12 Ω, T =-40...+150°C
j
Operating Parameters
Operating voltage 5
T =-40...+150°C: Vbb(on)
4.7
2.9
2.7
--
--
--
--
--
--
5.6
42
4.5
4.7
4.9
6.0
V
V
)
j
Undervoltage shutdown
T =25°C: Vbb(under)
j
T =-40...+150°C:
j
Undervoltage restart
T =-40...+150°C: Vbb(u rst)
V
V
j
Undervoltage restart of charge pump
Vbb(ucp)
see diagram page 13
Undervoltage hysteresis
∆Vbb(under)
--
0.1
--
V
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection6
Ibb=4 mA
T =-40...+150°C: Vbb(over)
T =-40...+150°C: Vbb(o rst)
T =-40...+150°C: ∆Vbb(over)
T =-40...+150°C: Vbb(AZ)
42
40
--
--
--
0.1
70
52
--
--
V
V
V
V
j
j
j
j
)
65
--
Standby current (pin 3)
Tj=-40...+25°C: Ibb(off)
Tj= 150°C:
--
--
--
10
18
--
15
25
20
µA
µA
VIN=0
IL(off)
Leakage output current (included in Ibb(off)
)
VIN=0
Operating current (Pin 1)7), VIN=5 V,
Tj =-40...+150°C
IGND
--
1
2.1
mA
5
)
At supply voltage increase up to V = 5.6 V typ without charge pump, V
≈V - 2 V
bb
bb
OUT
6
)
Meassured without load. See also V
in table of protection functions and circuit diagram page 7.
ON(CL)
Infineon Technologies AG
3
2006-Mar-28
®
PROFET ITS 410 E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Protection Functions8)
9
)
Initial peak short circuit current limit (pin 3 to 5) ,
IL(SCp)
( max 450 µs if VON > VON(SC)
)
Tj =-40°C:
Tj =25°C:
9
--
4
--
12
--
23
--
A
Tj =+150°C:
15
Repetitive overload shutdown current limit
VON= 8 V, Tj = Tjt (see timing diagrams, page 12)
Short circuit shutdown delay after input pos. slope
IL(SCr)
--
--
5
--
A
V
ON > VON(SC)
,
Tj =-40..+150°C: td(SC)
--
450
µs
min value valid only, if input "low" time exceeds 60 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C: VON(CL)
IL= 1 A, Tj =-40..+150°C:
61
--
68
--
73
75
V
Short circuit shutdown detection voltage
(pin 3 to 5)
VON(SC)
Tjt
∆Tjt
-Vbb
--
150
--
8.5
--
10
--
--
--
--
V
°C
K
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 10
)
--
32
V
Diagnostic Characteristics
Open load detection current
IL (OL)
mA
(on-condition)
Tj=-40 ..150°C:
2
--
150
7
)
)
Add I , if I > 0, add I , if V >5.5 V
ST
ST
IN
IN
8
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
9
)
Short circuit current limit for max. duration of t
=450 µs, prior to shutdown
d(SC) max
10
)
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
Infineon Technologies AG
4
2006-Mar-28
®
PROFET ITS 410 E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Input and Status Feedback11
)
Input turn-on threshold voltage
Tj =-40..+150°C: VIN(T+)
Tj =-40..+150°C: VIN(T-)
1.5
1.0
--
1
10
--
--
--
0.5
--
25
--
2.4
--
--
30
70
450
V
V
V
µA
µA
µs
Input turn-off threshold voltage
Input threshold hysteresis
∆ VIN(T)
IIN(off)
Off state input current (pin 2), VIN = 0.4 V
On state input current (pin 2), VIN = 5 V
Status invalid after positive input slope
IIN(on)
td(ST SC)
(short circuit)
T =-40 ... +150°C:
j
Status invalid after positive input slope
td(ST)
300
-- 1400
µs
(open load)
Status output (open drain)
T =-40 ... +150°C:
j
Zener limit voltage T =-40...+150°C, IST = +50 uA: VST(high)
ST low voltage T =-40...+150°C, IST = +1.6 mA: VST(low)
5.0
--
6
--
--
0.4
V
j
j
11
)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Infineon Technologies AG
5
2006-Mar-28
®
PROFET ITS 410 E2
Truth Table
Input-
level
Output
level
Status
410 E2
Normal operation
Open load
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
H
H
L
H
12
)
H
L
L
H
H
L
L
L
L
L
L
Short circuit to
GND
Short circuit to V
Overtemperature
Undervoltage
H
L
H
bb
H (L13
)
)
L
L
H
H
H
H
Overvoltage
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 13)
Terms
Input circuit (ESD protection)
I
bb
R
3
I
I
IN
IN
V
bb
IN
2
I
L
V
ON
ESD-
ZD ZD
OUT
PROFET
I
5
ST
I1
I2
I
ST
I
4
V
GND
V
IN
ST
GND
V
1
I
bb
V
GND
OUT
R
GND
ZD 6 V typ., ESD zener diodes are not to be used as
I1
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
12
)
13
)
Power Transistor off, high impedance.
Low resistance short V to output may be detected in ON-state by the no-load-detection
bb
Infineon Technologies AG
6
2006-Mar-28
®
PROFET ITS 410 E2
Status output
Overvolt. and reverse batt. protection
+ V
bb
+5V
V
Z2
R
IN
IN
RST(ON)
ST
Logic
ST
R
ST
ESD-
ZD
V
Z1
PROFET
GND
GND
ESD-Zener diode: 6 V typ., max 5 mA;
R
GND
R
< 250 Ω at 1.6 mA, ESD zener diodes are not
ST(ON)
Signal GND
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
V
= 6.2 V typ., V = 70 V typ., R
= 150 Ω, R ,
GND IN
Z1
ST
Z2
R
= 15 kΩ
Short circuit detection
Open-load detection
Fault Condition: VON > 8.5 V typ.; IN high
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
+ V
bb
+ V
bb
V
ON
V
ON
ON
OUT
Short circuit
detection
Logic
unit
OUT
Open load
detection
Logic
unit
Inductive and overvoltage output clamp
+ V
bb
GND disconnect
V
Z
VON
3
V
bb
IN
2
OUT
PROFET
GND
OUT
PROFET
5
ST
4
GND
1
V
ON
clamped to 68 V typ.
V
V
V
V
bb
IN
ST
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+)
.
Due to VGND >0, no VST = low signal available.
Infineon Technologies AG
7
2006-Mar-28
®
PROFET ITS 410 E2
GND disconnect with GND pull up
Inductive Load switch-off energy
dissipation
E
3
bb
V
bb
IN
E
AS
2
E
E
Load
OUT
PROFET
V
5
bb
IN
ST
4
GND
1
OUT
PROFET
=
ST
L
V
V
GND
L
V
V
IN ST
GND
bb
Z
{
R
L
L
E
R
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
V
disconnect with energized inductive
bb
Energy stored in load inductance:
load
2
1
E = / ·L·I
L
2
L
While demagnetizing load inductance, the energy
3
dissipated in PROFET is
V
high
bb
IN
2
E
AS= Ebb + EL - ER= VON(CL)·iL(t) dt,
∫
OUT
PROFET
5
with an approximate solution for RL > 0Ω:
ST
4
IL·L
IL·RL
GND
1
E =
AS
·(Vbb +|VOUT(CL)|)· ln (1+
)
2·RL
|VOUT(CL)|
Maximum allowable load inductance for
V
a single switch off
bb
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
Normal load current can be handled by the PROFET
itself.
L [mH]
10000
V
disconnect with charged external
bb
inductive load
S
3
V
1000
100
10
high
IN
bb
2
OUT
PROFET
5
D
ST
4
GND
1
V
bb
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
1
1
2
3
4
5
6
I
[A]
L
Infineon Technologies AG
8
2006-Mar-28
®
PROFET ITS 410 E2
Typ. transient thermal impedance chip case
Z
Z
thJC = f(tp, D), D=tp/T
thJC [K/W]
10
1
0.1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1
t
[s]
p
Infineon Technologies AG
9
2006-Mar-28
®
PROFET ITS 410 E2
Options Overview
High-side switch, Input protection, ESD protection, load dump and reverse battery
protection with 150 Ω in GND connection, protection against loss of ground
Type
ITS410E2
Logic version
E
Overtemperature protection with hysteresis
T >150 °C, latch function14 15
j
)
)
j
X
X
T >150 °C, with auto-restart on cooling
Short circuit to GND protection
)
14
switches off when V >3.5 V typ. and Vbb> 7 V typ
ON
(when first turned on after approx. 150 µs)
14)
switches off when V >8.5 V typ.
ON
(when first turned on after approx. 150 µs)
Achieved through overtemperature protection
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across power
transistor
X
Undervoltage shutdown with auto restart
X
X
Overvoltage shutdown with auto restart16
)
Status feedback for
overtemperature
short circuit to GND
X
X
17
)
short to V
bb
-
open load
X
-
-
undervoltage
overvoltage
Status output type
CMOS
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to V - V
bb ON(CL)
X
X
X
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
Protection against loss of GND
14
)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V
≠
OUT
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and t
.
d(SC)
15
16
17
)
With latch function. Reseted by a) Input low, b) Undervoltage
No auto restart after overvoltage in case of short circuit
)
)
Low resistance short V to output may be detected in ON-state by the no-load-detection
bb
Infineon Technologies AG
10
2006-Mar-28
®
PROFET ITS 410 E2
Timing diagrams
Figure 1a: V turn on:
bb
Figure 2b: Switching an inductive load
IN
IN
t
d(bb IN)
V
bb
t
d(ST)
ST
V
*)
V
OUT
OUT
A
ST open drain
I
L
t
I
L(OL)
A
IN
t
in case of too early V =high the device may not turn on (curve A)
t
d(bb IN) approx. 150 µs
*) if the time constant of load is too large, open-load-status may
occur
Figure 2a: Switching a lamp,
IN
ST
V
OUT
I
L
t
Infineon Technologies AG
11
2006-Mar-28
®
PROFET ITS 410 E2
Figure 3a: Turn on into short circuit,
Figure 3c: Short circuit while on:
IN
IN
ST
V
ST
V
OUT
OUT
t
d(SC)
I
L
I
L
**)
t
t
t
approx. -- µs if Vbb - VOUT > 8.5 V typ.
**) current peak approx. 20 µs
d(SC)
Figure 4a: Overtemperature:
Figure 3b: Turn on into overload,
Reset if T <T
j
jt
IN
IN
I
L
ST
I
L(SCp)
I
L(SCr)
V
OUT
T
J
ST
t
t
Heating up may require several seconds,
V
bb - VOUT < 8.5 V typ.
Infineon Technologies AG
12
2006-Mar-28
®
PROFET ITS 410 E2
Figure 5a: Open load: detection in ON-state, turn
Figure 6a: Undervoltage:
on/off to open load
IN
IN
V
bb
t
d(ST)
ST
V
V
bb(u cp)
bb(under)
V
bb(u rst)
V
OUT
V
OUT
I
L
ST open drain
open
t
t
Figure 5b: Open load: detection in ON-state, open
Figure 6b: Undervoltage restart of charge pump
load occurs in on-state
V
ON(CL)
V
on
IN
t
t
d(ST OL1)
d(ST OL2)
ST
V
V
bb(over)
OUT
V
V
bb(o rst)
bb(u rst)
V
normal
normal
bb(u cp)
open
I
L
V
bb(under)
V
bb
t
charge pump starts at Vbb(ucp) =5.6 V typ.
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
Infineon Technologies AG
13
2006-Mar-28
®
PROFET ITS 410 E2
Figure 7a: Overvoltage:
IN
V
V
V
V
ON(CL)
bb(over)
bb(o rst)
bb
V
OUT
ST
t
Figure 9a: Overvoltage at short circuit shutdown:
IN
V
bb
V
bb(o rst)
Output short to GND
short circuit shutdown
V
I
OUT
L
ST
t
Overvoltage due to power line inductance. No overvoltage auto-
restart of PROFET after short circuit shutdown.
Infineon Technologies AG
14
2006-Mar-28
®
PROFET ITS 410 E2
Published by
Package and Ordering Code
Infineon Technologies AG,
St.-Martin-Strasse 53,
All dimensions in mm
D-81669 München
Standard PG-TO220AB/5 Ordering code
© Infineon Technologies AG 2006
All Rights Reserved.
ITS 410 E2
SP000221219
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-
support devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.
PG-TO220AB/5, Option E3043 Ordering code
ITS 410 E2 E3043
SP000221227
Infineon Technologies AG
15
2006-Mar-28
相关型号：
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