SP000396296 [INFINEON]
Power Field-Effect Transistor,;
| 型号： | SP000396296 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总9页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD80P03P4L-07
OptiMOS®-P2 Power-Transistor
Product Summary
VDS
RDS(on)
ID
-30
6.8
-80
V
mW
A
Features
• P-channel - Logic Level - Enhancement mode
PG-TO252-3-11
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
• Intended for reverse battery protection
Type
Package
Marking
IPD80P03P4L-07
PG-TO252-3-11 4P03L07
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C,
V GS=-10V1)
I D
Continuous drain current
-80
-65
A
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse
E AS
I AS
T C=25°C
-320
135
I D=-40A
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
mJ
A
-
-80
V GS
P tot
-
+5/-16
88
V
T C=25 °C
Power dissipation
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 2.0
page 1
2018-02-15
IPD80P03P4L-07
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
-
1.7
62
40
K/W
minimal footprint
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0V, I D= -1mA
Drain-source breakdown voltage
Gate threshold voltage
-30
-
-
V
V GS(th)
V DS=V GS, I D=-130µA
-1.0
-1.5
-2.0
V DS=-24V, V GS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
-0.03
-10
-1
µA
V DS=-24V, V GS=0V,
T j=125°C2)
-100
I GSS
V GS=-16V, V DS=0V
Gate-source leakage current
-
-
-
-
-100 nA
R DS(on) V GS=-4.5V, I D=-40A
V GS=-10V, I D=-80A
Drain-source on-state resistance
8.7
5.6
12
mW
6.8
Rev. 2.0
page 2
2018-02-15
IPD80P03P4L-07
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
4400
1220
30
5700 pF
1600
V GS=0V, V DS=-25V,
f =1MHz
60
8
-
-
-
-
ns
V DD=-15V,
4
V GS=-10V, I D=-80A,
R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
15
60
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
16
8
20
16
80
-
nC
Q gd
V DD=-24V, I D=-80A,
V GS=0 to -10V
Q g
63
-3.7
V plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
-80
T C=25°C
I S,pulse
-320
V GS=0V, I F=-80A,
T j=25°C
V SD
Diode forward voltage
-
-
-1.3
V
Reverse recovery time2)
t rr
-
-
50
40
-
-
ns
V R=-15V, I F=-40A,
di F/dt =-100A/µs
Reverse recovery charge2)
Q rr
nC
1) Current is limited by bondwire; with an R thJC = 1.7K/W the chip is able to carry 92A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.0
page 3
2018-02-15
IPD80P03P4L-07
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≤ -6V
I D = f(T C); V GS ≤ -6V
100
80
60
40
20
0
100
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
10 µs
100
0.5
100 µs
0.1
1 ms
10-1
0.05
0.01
single pulse
10-2
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
-VDS [V]
tp [s]
Rev. 2.0
page 4
2018-02-15
IPD80P03P4L-07
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
20
320
-5V
-4V
-4.5V
10V
17
14
11
8
5V
240
160
80
4.5V
4V
3.5V
3V
-10V
5
0
0
80
160
-ID [A]
240
320
0
2
4
6
-VDS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -80 A; V GS = -10 V
320
240
160
80
9
8
7
6
5
4
-55 °C
25 °C
175 °C
0
-60
-20
20
60
100
140
180
1
2
3
4
5
6
Tj [°C]
-VGS [V]
Rev. 2.0
page 5
2018-02-15
IPD80P03P4L-07
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: -I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
105
104
103
102
101
2
1300µA
1.5
Ciss
130µA
Coss
1
0.5
0
Crss
0
5
10
15
20
25
30
-60
-20
20
60
100
140
180
Tj [°C]
-VDS [V]
11 Typical forward diode characteristicis
IF = f(VSD
12 Avalanche characteristics
I AS = f(t AV
)
)
parameter: T j
parameter: Tj(start)
103
100
25°C
100°C
102
150°C
10
25 °C
175 °C
101
100
0
1
1
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
-VSD [V]
tAV [µs]
Rev. 2.0
page 6
2018-02-15
IPD80P03P4L-07
13 Avalanche energy
E AS = f(T j)
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D = -1 mA
parameter: I D
33
300
20 A
250
32
31
30
29
28
200
150
40 A
100
80 A
50
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = -80 A pulsed
parameter: V DD
12
10
8
VGS
-24V
Qg
-6V
6
4
Qgate
2
Qgd
Q gs
0
0
10
20
30
40
50
60
70
Qgate [nC]
Rev. 2.0
page 7
2018-02-15
IPD80P03P4L-07
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2018
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.0
page 8
2018-02-15
IPD80P03P4L-07
Revision History
Version
Date
Changes
1.0
2.0
7/30/2018 Final Datasheet
2/15/2018 typo corrected
Rev. 2.0
page 9
2018-02-15
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