SP000482382 [INFINEON]

Power Field-Effect Transistor, 8.8A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8;


型号：	SP000482382
厂家：	Infineon
描述：	Power Field-Effect Transistor, 8.8A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8 开关脉冲光电二极管晶体管
文件：	总10页 (文件大小：545K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Type

BSC160N10NS3 G

$(*'#$%^TM3 Power-Transistor

Product Summary

V_DS

100

9 ꢀ .1)+ )7% $ &- / $ # ꢁ$ # # - ,3% /0)- ,

9 ꢂ ꢁ# (!,,% *ꢃ ,- /+ !* *% 3% *

R_DS(on),max

I_D

9 ꢄ 5# % **% ,1 '!1% # (!/'% 5 R _DS(on)product (FOM)

9 % /6 *- 4 - ,ꢁ/% 0)01!,# % R _DS(on)

PG-TDSON-8

9 ꢅ ꢆ ꢇ 8ꢈ - .% /!1),' 1% + .% /!12 /%

9 ꢉ " ꢁ&/% % *% !$ .*!1),'ꢊ ꢋ - ꢌ ꢍ # - + .*)!,1

9 ꢎ 2 !*)&)% $ !# # - /$ ),' 1- ꢏ ꢄ ꢐ ꢄ ꢈ ¹⁾for target application

9 ꢌ !*- '% ,ꢁ&/% % !## - /$ ),' 1- ꢑꢄ ꢈ ꢒ ꢅ ꢓ ꢔ ꢕ ꢁꢓ ꢁꢓ ꢅ

Type

Package

Marking

BSC160N10NS3 G

PG-TDSON-8

160N10NS

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

Continuous drain current

T _C=100 °C

T _A=25 °C,

R _thJA=50 K/W²⁾

8.8

Pulsed drain current³⁾

I _D,pulse

E _AS

T _C=25 °C

168

I _D=33 A, R _GS=25 #

Avalanche energy, single pulse

Gate source voltage

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

Rev. 2.4

page 1

2009-10-30

BSC160N10NS3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

R _thJC

R _thJA

Thermal resistance, junction - case

2.1

K/W

Thermal resistance,

junction - ambient

6 cm²cooling area²⁾

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSSV _GS=0 V, I _D=1 mA

V _GS(th)V _DS=V _GS, I _D=33 µA

Drain-source breakdown voltage

Gate threshold voltage

100

2.7

3.5

V _DS=100 V, V _GS=0 V,

T _j=25 °C

I _DSS

Zero gate voltage drain current

0.01

µA

V _DS=100 V, V _GS=0 V,

T _j=125 °C

100

I _GSS

V _GS=20 V, V _DS=0 V

Gate-source leakage current

100 nA

R _DS(on)V _GS=10 V, I _D=33 A

V _GS=6 V, I _D=16 A

R _G

Drain-source on-state resistance

13.9

17.6

1.4

Gate resistance

|V _DS|>2|I _D|R _DS(on)max

I _D=33 A

g _fs

Transconductance

¹⁾J-STD20 and JESD22

²⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

³⁾see figure 3

Rev. 2.4

page 2

2009-10-30

BSC160N10NS3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C _iss

1300

240

1700 pF

V _GS=0 V, V _DS=50 V,

f =1 MHz

C _oss

C _rss

t _d(on)

t _r

320

V _DD=50 V, V _GS=10 V,

I _D=16 A, R _G=1.6 #

t _d(off)

t _f

Turn-off delay time

Fall time

Gate Charge Characteristics⁴⁾

Gate to source charge

Gate to drain charge

Switching charge

Q _gs

Q _gd

V _DD=50 V, I _D=16 A,

V _GS=0 to 10 V

Q _sw

Q _g

Gate charge total

4.4

V _plateau

Q _oss

Gate plateau voltage

Output charge

V _DD=50 V, V _GS=0 V

Reverse Diode

I _S

Diode continous forward current

Diode pulse current

T _C=25 °C

I _S,pulse

168

V _GS=0 V, I _F=33 A,

T _j=25 °C

V _SD

Diode forward voltage

1.2

t _rr

Reverse recovery time

V _R=50 V, I _F=16A,

di _F/dt =100 A/µs

Q _rr

Reverse recovery charge

⁴⁾See figure 16 for gate charge parameter definition

Rev. 2.4

page 3

2009-10-30

BSC160N10NS3 G

1 Power dissipation

2 Drain current

P _tot=f(T _C)

I _D=f(T _C); V _GS: ꢅ ꢇ

120

160

120

160

T_C[°C]

3 Safe operating area

I _D=f(V _DS); T _C=25 °C; D =0

parameter: t _p

4 Max. transient thermal impedance

Z _thJC=f(t _p)

parameter: D =t _p/T

10³

10²

10¹

10⁰

10^-1

10¹

100 ns

1 µs

0.5

10 µs

10⁰

0.2

0.1

100 µs

0.05

1 ms

0.02

10^-1

0.01

single pulse

10^-2

10^-1

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DS[V]

t_p[s]

Rev. 2.4

page 4

2009-10-30

BSC160N10NS3 G

5 Typ. output characteristics

I _D=f(V _DS); T _j=25 °C

6 Typ. drain-source on resistance

R _DS(on)=f(I _D); T _j=25 °C

parameter: V _GS

120

4.5 V

10 V

5 V

100

7 V

5.5 V

6 V

7 V

10 V

5.5 V

5 V

4.5 V

100

V_DS[V]

I_D[A]

7 Typ. transfer characteristics

I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max

parameter: T _j

8 Typ. forward transconductance

g _fs=f(I _D); T _j=25 °C

150 °C

25 °C

100

V_GS[V]

I_D[A]

Rev. 2.4

page 5

2009-10-30

BSC160N10NS3 G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

V _GS(th)=f(T _j); V _GS=V _DS

parameter: I _D

R _DS(on)=f(T _j); I _D=33 A; V _GS=10 V

3.5

330 µA

2.5

33 µA

98 %

typ

1.5

0.5

-60

-20

100

140

180

-60

-20

T_j[°C]

100

140

180

T_j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _F=f(V _SD

C =f(V _DS); V _GS=0 V; f =1 MHz

)

parameter: T _j

10⁴

1000

Ciss

10³

10²

10¹

10⁰

100

Coss

25 °C

150 °C, 98%

Crss

150 °C

25 °C, 98%

V_DS[V]

0.5

1.5

V_SD[V]

Rev. 2.4

page 6

2009-10-30

BSC160N10NS3 G

13 Avalanche characteristics

14 Typ. gate charge

V _GS=f(Q _gate); I _D=16 A pulsed

parameter: V _DD

I _AS=f(t _AV); R _GS=25 #

parameter: T _j(start)

80 V

50 V

20 V

Q_gate[nC]

15 Drain-source breakdown voltage

16 Gate charge waveforms

V _BR(DSS)=f(T _j); I _D=1 mA

110

105

100

-60

-20

100

140

180

T_j[°C]

BSC160N10NS3 G

Package Outline: PG-TDSON-8

Rev. 2.4

page 8

2009-10-30

BSC160N10NS3 G

Dimensions in mm

Rev. 2.4

page 9

2009-10-30

BSC160N10NS3 G

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Rev. 2.4

page 10

2009-10-30

SP000482382 [INFINEON]

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