SP000680644 [INFINEON]
Power Field-Effect Transistor,;
| 型号： | SP000680644 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总11页 (文件大小：1001K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB021N06N3 G IPI024N06N3 G
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"%&$!"#™3 Power-Transistor
Product Summary
Features
V 9H
.(
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Q #451< 6? B 8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 ꢀ B53 ꢀ
Q ( @D9=9J54 D53 8>? <? 7I 6? B ꢁ ꢂ ꢃꢁ ꢂ 3 ? >F5BD5BC
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Q ꢉ ꢊ ꢊ ꢋ 1F1<1>3 85 D5CD54
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Q " 1<? 75>ꢇ6B55 13 3 ? B49>7 D? #ꢄ ꢂ ꢍ ꢉ ꢎ ꢏ ꢐ ꢇꢎ ꢇꢎ ꢉ
Type
#)ꢗ ꢊ ꢎ ꢉ ' ꢊ ꢍ ' ꢖ !
#)#ꢊ ꢎ ꢏ ' ꢊ ꢍ ' ꢖ !
#))ꢊ ꢎ ꢏ ' ꢊ ꢍ ' ꢖ !
Package
Marking
E=%ID*.+%+
(*)C(.C
E=%ID*.*%+
(*,C(.C
E=%ID**(%+
(*,C(.C
Maximum ratings, 1D T Vꢑ ꢎ ꢒ Tꢂ ꢈ E><5CC ? D85BG9C5 C@53 96954
Value
Parameter
Symbol Conditions
Unit
T 8ꢑ ꢎ ꢒ Tꢂ *#
I 9
ꢂ ? >D9>E? EC 4B19> 3 EBB5>D
)*(
)*(
6
T 8ꢑ ꢉ ꢊ ꢊ Tꢂ
)E<C54 4B19> 3 EBB5>D+#
I 9$\aX_Q
E 6H
T 8ꢑ ꢎ ꢒ Tꢂ
I 9ꢑ ꢉ ꢊ ꢊ ꢓ ꢈ R =Hꢑ ꢎ ꢒ "
,0(
ꢓ F1<1>3 85 5>5B7Iꢈ C9>7<5 @E<C5,#
!1D5 C? EB3 5 F? <D175
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Y@
J
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q*(
P `[`
T 8ꢑ ꢎ ꢒ Tꢂ
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*-(
K
Tꢂ
T Vꢈ T _`S
( @5B1D9>7 1>4 CD? B175 D5=@5B1DEB5
ꢇꢒ ꢒ ꢀꢀꢀ ꢉ ꢔ ꢒ
ꢒ ꢒ ꢃꢉ ꢔ ꢒ ꢃꢒ ꢍ
#ꢄ ꢂ 3 <9=1D93 3 1D57? BIꢌ ꢁ #' #ꢄ ꢂ ꢍ ꢕ ꢇꢉ
)#$ ꢇ,-ꢁ ꢎ ꢊ 1>4 $ ꢄ ,ꢁ ꢎ ꢎ
*# ꢂ EBB5>D 9C <9=9D54 2 I 2 ? >4G9B5ꢌ G9D8 1>R `T@8ꢑ ꢊ ꢀꢍ % ꢃ/ D85 3 89@ 9C 12 <5 D? 3 1BBI ꢎ ꢒ ꢍ ꢓ ꢀ
ꢖ ꢆ ,55 697EB5 ꢖ 6? B =? B5 45D19<54 9>6? B=1D9? >
,# ,55 697EB5 ꢉ ꢖ 6? B =? B5 45D19<54 9>6? B=1D9? >
+ 5Fꢀ ꢎ ꢀꢎ
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ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ
IPB021N06N3 G IPI024N06N3 G
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Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R `T@8
-85B=1< B5C9CD1>3 5ꢈ :E>3 D9? > ꢇ 3 1C5
-85B=1< B5C9CD1>3 5ꢈ
%
ꢇ
%
%
ꢇ
%
(&.
ꢍ ꢎ
,(
A'K
R `T@6
=9>9=1< 6? ? D@B9>D
ꢍ 3 =V 3 ? ? <9>7 1B51-#
:E>3 D9? > ꢇ 1=2 95>D
Electrical characteristics, 1D T Vꢑ ꢎ ꢒ Tꢂ ꢈ E><5CC ? D85BG9C5 C@53 96954
Static characteristics
V "7G#9HH
V =H"`T#
V
V
=Hꢑ ꢊ .ꢈ I 9ꢑ ꢉ =ꢓ
ꢁ B19>ꢇC? EB3 5 2 B51;4? G> F? <D175
!1D5 D8B5C8? <4 F? <D175
.(
*
%
%
J
9H4V =Hꢈ I 9ꢑ ꢉ ꢐ ꢍ Wꢓ
+
,
V
9Hꢑ ꢍ ꢊ .ꢈ V =Hꢑ ꢊ .ꢈ
I 9HH
05B? 71D5 F? <D175 4B19> 3 EBB5>D
%
%
(&)
+(
+
s6
T Vꢑ ꢎ ꢒ Tꢂ
V
9Hꢑ ꢍ ꢊ .ꢈ V =Hꢑ ꢊ .ꢈ
+((
T Vꢑ ꢉ ꢎ ꢒ Tꢂ
I =HH
V
V
=Hꢑ ꢎ ꢊ .ꢈ V 9Hꢑ ꢊ .
=Hꢑ ꢉ ꢊ .ꢈ I 9ꢑ ꢉ ꢊ ꢊ ꢓ
!1D5ꢇC? EB3 5 <51;175 3 EBB5>D
%
%
)
)(( Z6
R 9H"[Z#
ꢁ B19>ꢇC? EB3 5 ? >ꢇCD1D5 B5C9CD1>3 5
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%
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V
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=Hꢑ ꢉ ꢊ .ꢈ I 9ꢑ ꢉ ꢊ ꢊ ꢓ ꢈ
%
%
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)&+
R =
g R_
!1D5 B5C9CD1>3 5
"
gV 9Hg5*gI 9gR 9H"[Z#YMdꢈ
I 9ꢑ ꢉ ꢊ ꢊ ꢓ
I^MZ_O[ZPaO`MZOQ
1*
)0,
%
H
*
-# ꢁ 5F93 5 ? > ꢏ ꢊ == H ꢏ ꢊ == H ꢉ ꢀꢒ == 5@? HI )ꢂ ꢗ + ꢏ G9D8 ꢍ 3 = ꢅ? >5 <1I5Bꢈ ꢔ ꢊ W= D893 ;ꢆ 3 ? @@5B 1B51 6? B 4B19>
3 ? >>53 D9? >ꢀ )ꢂ ꢗ 9C F5BD93 1< 9> CD9<< 19Bꢀ
+ 5Fꢀ ꢎ ꢀꢎ
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ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ
IPB021N06N3 G IPI024N06N3 G
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Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
#>@ED 3 1@13 9D1>3 5
( ED@ED 3 1@13 9D1>3 5
+ 5F5BC5 DB1>C65B 3 1@13 9D1>3 5
-EB>ꢇ? > 45<1I D9=5
+ 9C5 D9=5
C U__
%
%
%
%
%
%
%
)/(((
+/((
)*(
,)
*+((( \<
V
=Hꢑ ꢊ .ꢈ V 9Hꢑ ꢖ ꢊ .ꢈ
C [__
C ^__
t P"[Z#
t ^
,1((
%
f ꢑ ꢉ & " J
%
%
%
%
Z_
0(
V
99ꢑ ꢖ ꢊ .ꢈ V =Hꢑ ꢉ ꢊ .ꢈ
I 9ꢑ ꢉ ꢊ ꢊ ꢓ ꢈ R =ꢑ ꢉ ꢀꢍ "
t P"[RR#
t R
-EB>ꢇ? 66 45<1I D9=5
1<< D9=5
/1
*,
!1D5 ꢂ 81BS5 ꢂ 81B13 D5B9CD93 C.#
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!1D5 D? 4B19> 3 81B75
,G9D3 89>7 3 81B75
Q S_
%
%
%
%
%
%
0+
)/
%
Z8
Q SP
%
V
V
99ꢑ ꢖ ꢊ .ꢈ I 9ꢑ ꢉ ꢊ ꢊ ꢓ ꢈ
=Hꢑ ꢊ D? ꢉ ꢊ .
Q _c
Q S
-(
%
*/-
%
!1D5 3 81B75 D? D1<
*(.
-&(
)./
V \XM`QMa
Q [__
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( ED@ED 3 81B75
J
V
99ꢑ ꢖ ꢊ .ꢈ V =Hꢑ ꢊ .
*** Z8
Reverse Diode
I H
ꢁ 9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB5>D
ꢁ 9? 45 @E<C5 3 EBB5>D
%
%
%
%
)*(
,0(
6
J
T 8ꢑ ꢎ ꢒ Tꢂ
I H$\aX_Q
V
=Hꢑ ꢊ .ꢈ I <ꢑ ꢉ ꢊ ꢊ ꢓ ꢈ
V H9
ꢁ 9? 45 6? BG1B4 F? <D175
%
(&1,
)&*
T Vꢑ ꢎ ꢒ Tꢂ
t ^^
+ 5F5BC5 B53 ? F5BI D9=5
%
%
./
0+
%
%
Z_
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PU<ꢃ4Dꢑ ꢉ ꢊ ꢊ ꢓ ꢃWC
Q ^^
+ 5F5BC5 B53 ? F5BI 3 81B75
Z8
.# ,55 697EB5 ꢉ ꢍ 6? B 71D5 3 81B75 @1B1=5D5B 4569>9D9? >
+ 5Fꢀ ꢎ ꢀꢎ
@175 ꢖ
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ
IPB021N06N3 G IPI024N06N3 G
IPP024N06N3 G
1 Power dissipation
2 Drain current
P
`[`4R"T 8#
I 94R"T 8ꢆꢌ V =H"ꢉ ꢊ .
300
250
200
150
100
50
140
120
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I 94R"V 9Hꢆꢌ T 8ꢑ ꢎ ꢒ Tꢂ ꢌ D 4(
@1B1=5D5Bꢘ t \
4 Max. transient thermal impedance
`T@84R"t \#
Z
@1B1=5D5Bꢘ D 4t \'T
103
100
<9=9D54 2 I ? >ꢇCD1D5
^Q_U_`MZOQ
ꢉ WC
ꢉ ꢊ WC
ꢉ ꢊ ꢊ WC
102
101
100
10-1
(&-
(&*
ꢉ =C
ꢉ ꢊ =C
98
10-1
(&)
(&(-
(&(*
(&()
C9>7<5 @E<C5
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
+ 5Fꢀ ꢎ ꢀꢎ
@175 ꢏ
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ
IPB021N06N3 G IPI024N06N3 G
IPP024N06N3 G
5 Typ. output characteristics
I 94R"V 9Hꢆꢌ T Vꢑ ꢎ ꢒ Tꢂ
6 Typ. drain-source on resistance
9H"[Z#4R"I 9ꢆꢌ T Vꢑ ꢎ ꢒ Tꢂ
R
@1B1=5D5Bꢘ V =H
@1B1=5D5Bꢘ V =H
400
8
ꢉ ꢊ .
ꢔ .
ꢒ .
ꢏ ꢀꢒ .
ꢒ ꢀꢒ .
ꢍ .
ꢍ .
300
200
100
0
6
4
2
0
ꢒ ꢀꢒ .
ꢔ .
ꢉ ꢊ .
ꢒ .
ꢏ ꢀꢒ .
0
1
2
3
4
5
0
50
100 150 200 250 300 350 400
I D [A]
V DS [V]
7 Typ. transfer characteristics
I 94R"V =Hꢆꢌ KV 9Hg5*gI 9gR 9H"[Z#YMd
@1B1=5D5Bꢘ T V
8 Typ. forward transconductance
g R_4R"I 9ꢆꢌ T Vꢑ ꢎ ꢒ Tꢂ
400
350
300
250
200
150
100
240
200
160
120
80
40
ꢎ ꢒ Tꢂ
ꢉ ꢔ ꢒ Tꢂ
50
0
0
0
2
4
6
8
0
50
100
150
V GS [V]
I D [A]
+ 5Fꢀ ꢎ ꢀꢎ
@175 ꢒ
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ
IPB021N06N3 G IPI024N06N3 G
IPP024N06N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
=H"`T#4R"T Vꢆꢌ V =H4V 9H
R
9H"[Z#4R"T Vꢆꢌ I 9ꢑ ꢉ ꢊ ꢊ ꢓ ꢌ V =Hꢑ ꢉ ꢊ .
V
@1B1=5D5Bꢘ I 9
5
4
3.5
3
4
ꢉ ꢐ ꢍ ꢊ Wꢓ
ꢉ ꢐ ꢍ Wꢓ
2.5
2
3
YMd
`e\
2
1.5
1
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I <4R"V H9
C 4R"V 9Hꢆꢌ V =Hꢑ ꢊ .ꢌ f ꢑ ꢉ & " J
#
@1B1=5D5Bꢘ T V
105
103
8U__
ꢉ ꢔ ꢒ Tꢂ ꢈ =1H
104
103
102
101
ꢎ ꢒ Tꢂ
ꢉ ꢔ ꢒ Tꢂ
8[__
102
ꢎ ꢒ Tꢂ ꢈ =1H
101
8^__
100
0
0
20
40
60
0.5
1
1.5
2
V DS [V]
V SD [V]
+ 5Fꢀ ꢎ ꢀꢎ
@175 ꢍ
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ
IPB021N06N3 G IPI024N06N3 G
IPP024N06N3 G
13 Avalanche characteristics
6H4R"t 6Jꢆꢌ R =Hꢑ ꢎ ꢒ "
14 Typ. gate charge
=H4R"Q SM`Qꢆꢌ I 9ꢑ ꢉ ꢊ ꢊ ꢓ @E<C54
V
I
@1B1=5D5Bꢘ T V"_`M^`#
@1B1=5D5Bꢘ V 99
103
12
ꢖ ꢊ .
10
8
ꢏ ꢕ .
ꢉ ꢎ .
102
ꢉ ꢊ ꢊ Tꢂ
ꢉ ꢒ ꢊ Tꢂ
ꢎ ꢒ Tꢂ
6
101
4
2
0
0
1
10
100
1000
50
100
150
200
250
t AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
7G"9HH#4R"T Vꢆꢌ I 9ꢑ ꢉ =ꢓ
70
V =H
Q g
65
60
55
50
V S _"`T#
Q S"`T#
Q _c
Q SP
Q gate
Q S_
-60
-20
20
60
100
140
180
T j [°C]
+ 5Fꢀ ꢎ ꢀꢎ
@175 ꢔ
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ
IPB021N06N3 G IPI024N06N3 G
IPP024N06N3 G
PG-TO220-3
+ 5Fꢀ ꢎ ꢀꢎ
@175 ꢕ
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ
IPB021N06N3 G IPI024N06N3 G
IPP024N06N3 G
PG-TO262-3 (I²-Pak)
+ 5Fꢀ ꢎ ꢀꢎ
@175 ꢐ
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ
IPB021N06N3 G IPI024N06N3 G
IPP024N06N3 G
PG-TO263 (D²-Pak)
+ 5Fꢀ ꢎ ꢀꢎ
@175 ꢉ ꢊ
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ
IPB021N06N3 G IPI024N06N3 G
IPP024N06N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
+ 5Fꢀ ꢎ ꢀꢎ
@175 ꢉ ꢉ
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ
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