SP001020716 [INFINEON]
Rectifier Diode,;
| 型号： | SP001020716 |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 二极管 |
| 文件： | 总10页 (文件大小：587K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Carbide Schottky Diode
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Final Datasheet
Rev. 2.0 2014-06-10
Industrial Power Control
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
thinQ!TM SiC Schottky Diode
1
Features:
2
3
CASE
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size/cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
RelatedLinks: www.infineon.com/sic
Applications
Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction
Package pin definitions
Pin 1 – anode 1
Pin 2 and backside – cathode
Pin 3 – anode 2
Key Performance and Package Parameters (leg/device)
Type
VDC
IF
QC
Tj,max
Marking
Package
IDW20G120C5B
1200V
10A / 20A
53nC / 106nC
175°C D2012B5
PG-TO247-3
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Table of Contents
Description…. .............................................................................................................................................2
Table of Contents........................................................................................................................................3
Maximum ratings.........................................................................................................................................4
Thermal Resistances ..................................................................................................................................4
Electrical Characteristics.............................................................................................................................5
Electrical Characteristics diagram ..............................................................................................................6
Package Drawings......................................................................................................................................9
Revision History........................................................................................................................................10
Disclaimer…..............................................................................................................................................10
Final Data Sheet
3
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Maximum ratings
Parameter
Symbol
Value (leg/device)
Unit
V
Repetitive peak reverse voltage
VRRM
1200
Continuous forward current for Rth(j-c,max)
TC = 153°C, D=1
TC = 135°C, D=1
10 / 20
14 / 29
31 / 62
IF
A
TC = 25°C, D=1
Surge non-repetitive forward current, sine halfwave
TC=25°C, tp=10ms
TC=150°C, tp=10ms
IF,SM
IF,max
∫ i²dt
dv/dt
95 / 190
90 / 180
A
A
Non-repetitive peak forward current
TC = 25°C, tp=10 µs
887 / 1774
i²t value
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
Diode dv/dt ruggedness
VR=0...960 V
45 / 180
41 / 162
A²s
V/ns
80
Power dissipation for Rth(j-c,max)
TC = 25°C
Ptot
125 / 250
W
°C
Operating and storage temperature
Tj;Tstg
-55…175
Soldering temperature,
wavesoldering only allowed at leads
1.6mm (0.063 in.) from case for 10 s
Mounting torque
Tsold
260
0.7
°C
M
Nm
M3 and M4 screws
Thermal Resistances
Value (leg/device)
min. typ. max.
Parameter
Symbol Conditions
Unit
Characteristic
Diode thermal resistance,
junction – case
Rth(j-c)
-
-
0.9/0.45
-
1.2/0.6
62
K/W
K/W
Thermal resistance,
junction – ambient
Rth(j-a)
leaded
Final Data Sheet
4
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Electrical Characteristics
Static Characteristic, at Tj=25°C, unless otherwise specified
Value (leg/device)
Parameter
Symbol Conditions
Unit
min.
typ.
max.
DC blocking voltage
Diode forward voltage
VDC
VF
Tj = 25°C
1200
-
-
V
V
IF= 10/20 A, Tj=25°C
IF= 10/20 A, Tj=150°C
VR=1200V, Tj=25°C
VR=1200V, Tj=150°C
-
-
1.4
1.7
1.65
2.30
6 / 12
29 / 58
83 / 166
420 / 840
Reverse current
IR
µA
Dynamic Characteristics, at Tj=25°C, unless otherwise specified
Value (leg/device)
Parameter
Symbol Conditions
VR = 800V, Tj=150° C & 25°C
Unit
min.
typ.
max.
Total capacitive charge
VR
QC
-
53 / 106
-
nC
Q C(V)dV
C
0
VR=1 V, f=1 MHz
VR=400 V, f=1 MHz
VR=800 V, f=1 MHz
-
-
-
684 /1368
48 / 96
38 / 76
-
-
-
Total Capacitance
C
pF
Final Data Sheet
5
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Electrical Characteristics diagrams
120
140
120
100
80
D= 0.10
Per leg
Per leg
D= 0.30
100
D= 0.50
D= 0.70
D= 1.00
80
60
40
20
0
60
40
20
0
25
50
75 100 125 150 175
25 50
75 100 125 150 175
Tc [°C]
Tc [°C]
Figure 1. Power dissipation per leg as function
of case temperature, Ptot=f(TC),
Rth(j-c),max
Figure 2. Diode forward current per leg as function
of temperature, parameter: Tj≤175°C, Rth(j-c),max
,
D=duty cycle, Vth, Rdiff @ Tj=175°C
20
100
Per leg
Per leg
-55ꢀC
25ꢀC
18
16
14
12
10
8
90
80
70
60
50
40
30
20
10
0
-55ꢀC
25ꢀC
100ꢀC
100ꢀC
150ꢀC
175ꢀC
6
150ꢀC
175ꢀC
4
2
0
0
0.5
1
1.5
VF [V]
2
2.5
0
1
2
3
4
5
6
VF [V]
Figure 3. Typical forward characteristics per leg,
IF=f(VF), tp= 10 µs, parameter: Tj
Figure 4. Typical forward characteristics in surge
current per leg, IF=f(VF), tp= 10 µs,
parameter: Tj
Final Data Sheet
6
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
60
50
40
30
20
10
0
1.E-04
Per leg
1.E-05
Per leg
1.E-06
175ꢀC
1.E-07
150ꢀC
1.E-08
100ꢀC
-55ꢀC
25ꢀC
1.E-09
200
100
400
700
dIF/dt [A/µs]
1000
400
600
VR [V]
800 1000 1200
Figure 5. Typical capacitive charge per leg as
function of current slope1, QC=f(dIF/dt), Tj=150°C
1) guaranteed by design.
Figure 6. Typical reverse characteristics per leg,
IR=f(VR), parameter: Tj
900
800
Per leg
Per leg
700
600
500
400
300
200
100
0
1
D= 0.50
D= 0.20
0.1
D= 0.10
D= 0.05
D= 0.02
D= 0.01
Single Pulse
0.01
0
1
10
100
1000
1E-6
1E-3
tp [s]
1E0
VR [V]
Figure 7. Max. transient thermal impedance per leg, Figure 8. Typical capacitance per leg as function of
Zth,j-c=f(tP), parameter: D=tP/T
reverse voltage, C=f(VR); Tj=25°C; f=1 MHz
Final Data Sheet
7
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
35
30
25
20
15
10
5
Per leg
0
0
200 400 600 800 1000 1200
VR [V]
Figure 9. Typical capacitively stored energy as
function of reverse voltage, per leg, EC=f(VR)
Final Data Sheet
8
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Package Drawings
Final Data Sheet
9
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Revision History
IIDW20G120C5B
Revision: 2014-06-10, Rev. 2.0
Previous Revision:
Revision
2.0
Date Subjects (major changes since last version)
Final data sheet
-
Disclaimer
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Any information within this document that you feel is wrong, unclear or missing at all?
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Please send your proposal (including a reference to this document) to: erratum@infineon.com
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Final Data Sheet
10
Rev. 2.0, 2014-06-10
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