SP001422940 [INFINEON]
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-36248-2, 2 PIN;
| 型号： | SP001422940 |
| 厂家： | 
Infineon |
| 描述： | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-36248-2, 2 PIN 局域网 放大器 CD 晶体管 |
| 文件： | 总11页 (文件大小：430K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 420 – 500 MHz
Description
The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs
designed for ultra-linear CDMA power amplifier applications.
They are available in thermally-enhanced ceramic open-cavity
packages . Manufactured with Infineon's advanced LDMOS process,
these devices provide excellent thermal performance and superior
reliability.
PTFA041501E
Package H-36248-2
PTFA041501F
Package H-37248-2
Features
Single-carrier CDMA IS-95 Performance
VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz
•
•
Broadband internal matching
Typical CDMA performance at 470 MHz, 28 V
- Average output power = 60 W
- Linear Gain = 21 dB
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
45
40
35
30
25
20
15
10
5
Efficiency
–15°C
25°C
90°C
- Efficiency = 41%
•
•
Typical CW performance, 470 MHz, 28 V
- Output power at P–1dB = 175 W
- Efficiency = 62%
Integrated ESD protection: Human Body Model,
Class 1 (minimum)
ACPR
•
•
•
Excellent thermal stability
Low HCI drift
ALT
Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
0
36
38
40
42
44
46
48
•
Pb-free and RoHS-compliant
Average Output Power (dBm)
RF Characteristics
Single-carrier CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in
Infineon test fixture)
V
DD
= 28 V, I
= 900 mA, P
= 60 W average, ƒ = 470 MHz
OUT
DQ
Characteristic
Gain
Symbol
Min
—
Typ
21
Max
—
Unit
dB
%
G
ps
Drain Efficiency
hD
—
41
—
Adjacent Channel Power Ratio
ACPR
—
–33
—
dB
All published data at T
= 25°C unless otherwise indicated
*See Infineon distributor for future availability.
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V
DD
= 28 V, I
= 900 mA, P = 150 W PEP, ƒ = 470 MHz, tone spacing = 1 MHz
OUT
DQ
Characteristic
Gain
Symbol
Min
20.0
45.0
—
Typ
21.0
46.5
–29
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
—
%
Intermodulation Distortion
IMD
–28
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
V
GS
V
DS
V
GS
V
DS
V
GS
= 0 V, I = 10 µA
V
(BR)DSS
DS
= 28 V, V
= 0 V
I
—
1.0
—
µA
W
GS
DSS
= 10 V, V = 0.1 V
R
DS(on)
—
0.07
2.48
—
DS
Operating Gate Voltage
Gate Leakage Current
= 28 V, I
= 900 mA
V
GS
2
3
V
DQ
= 10 V, V = 0 V
I
—
1.0
µA
DS
GSS
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
V
DSS
V
GS
–0.5 to +12
200
V
T
J
°C
T
STG
–40 to +150
0.42
°C
Thermal Resistance (T
= 70°C, 150 W CW)
R
qJC
°C/W
CASE
Ordering Information
Type andVersion
Package Type
H-36248-2
H-36248-2
H-37248-2
Package Description
Shipping
PTFA041501E V4
PTFA041501E V4 R250
PTFA041501F V4
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Thermally-enhanced earless flange, single-ended
Tray
Tape & Reel, 250 pcs
Tray
PTFA041501F V4 R250 H-37248-2
Tape & Reel, 250 pcs
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Broadband Circuit Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
VDD = 28 V, IDQ = 900 mA, POUT = 80 W
VDD = 28 V, IDQ = 900 mA
50
45
40
35
30
25
20
15
-13
-14
-15
-16
-17
-18
-19
-20
65
60
55
50
45
40
35
30
25
20
15
20.9
20.8
20.7
20.6
20.5
20.4
20.3
20.2
20.1
20
Efficiency
Efficiency
Output Power
Return Loss
Gain
Gain
19.9
460
462
464
466
468
470
460
462
464
466
468
470
Frequency (MHz)
Frequency (MHz)
Power Sweep at selected IDQ
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz
VDD = 28 V, ƒ = 470 MHz
22.0
21.5
21.0
20.5
20.0
19.5
19.0
18.5
18.0
17.5
17.0
22
21
20
19
18
17
16
15
80
70
60
50
40
30
20
10
IDQ = 1125 mA
Gain
IDQ = 900 mA
IDQ = 675 mA
Efficiency
TCASE = 25°C
TCASE = 90°C
39
41
43
45
47
49
51
53
55
39
41
43
45
47
49
51
53
55
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 900 mA,
IM3 vs. Output Power at Selected Biases
VDD = 28 V , ƒ1 = 469 MHz, ƒ2 = 470 MHz
ƒ1 = 469 MHz, ƒ2 = 470 MHz
0
-10
-20
-30
-40
-50
-60
-70
50
45
40
35
30
25
20
15
10
-25
-27
-29
-31
-33
-35
-37
-39
-41
-43
Efficiency
675 mA
IM3
900 mA
IM5
IM7
1125 mA
36
38
40
42
44
46
48
50
36
38
40
42
44
46
48
50
Output Power (dBm), avg.
Output Power (dBm)
Output Power (at 1 dB compression)
vs. Supply Voltage
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
IDQ = 900 mA, ƒ = 470 MHz
series show current
0.29 A
0.88 A
1.47 A
2.20 A
4.41 A
6.61 A
8.81 A
11.02 A
55
54
53
52
51
50
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
24
26
28
30
32
-20
0
20
40
60
80
100
Case Temperature (°C)
Supply Voltage (V)
Data Sheet
4 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z0 = 50 W
D
Z Source
Z Load
Z Load
G
470 MHz
450 MHz
S
Z Source
Frequency
MHz
Z Source W
Z Load W
470 MHz
450 MHz
R
jX
R
jX
450
0.88
0.84
0.84
0.84
0.83
–3.20
–3.20
–3.10
–3.00
–2.90
1.33
1.35
1.40
1.41
1.44
0.22
0.31
0.38
0.47
0.57
455
460
465
470
See next page for circuit information
Data Sheet
5 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Reference Circuit
C1
0.001µF
R6
R2
1.2K Ω
1.3K Ω
QQ1
LM7805
VDD
Q1
BCP56
C2
0.001µF
C3
0.001µF
R3
R4
2K Ω
2K Ω
R5
3.3K Ω
R6
10 Ω
L1
VDD
C4
10µF
35V
C5
0.1µF
R7
5.1K Ω
C6
120pF
C10
100pF
C11
1µF
C12
10µF
50V
C13
0.1µF
50V
C14
10µF
50V
l7
l6
l4
C8
11pF
C7
100pF
C20
5.6pF
C22
11pF
C25
100pF
DUT
J2
J1
l1
l2
l3
l5
l10
l11
l12
l13
l14
C21
5.1pF
C23
11pF
C24
8.2pF
C9
4.3pF
l8
l9
L2
C15
100pF
C16
1µF
C17
10µF
50V
C18
0.1µF
50V
C19
10µF
50V
V66000-G9267-D631-01-7606.dwg
Reference circuit schematic for ƒ = 460 MHz
Circuit Assembly Information
DUT
PCB
PTFA041501E or PTFA041501F
LTN/PTFA041501EF
LDMOS Transistor
0.76 mm [.030"] thick, e = 9.2
Rogers TMM10
2 oz. copper
r
1
Microstrip
Electrical Characteristics at 460 MHz
Dimensions L x W (mm)
Dimensions L xW (in.)
l 1
0.016 l , 50.69 W
0.058 l , 24.34 W
0.097 l , 4.85 W
0.081 l , 50.69 W
0.040 l , 4.85 W
0.158 l , 37.73 W
0.030 l , 10.94 W
0.158 l , 37.73 W
0.030 l , 10.94 W
0.025 l , 5.58 W
0.105 l , 5.58 W
0.006 l , 5.58 W
0.104 l , 21.37 W
0.014 l , 50.69 W
4.32 x 0.71
14.22 x 2.54
21.59 x 17.78
21.59 x 0.71
8.89 x 17.78
40.64 x 1.27
5.59 x 7.11
40.64 x 1.27
5.59 x 7.11
5.59 x 15.24
23.62 x 15.24
1.27 x 15.24
25.4 x 3.05
3.81 x 0.71
0.170 x 0.028
0.560 x 0.100
0.850 x 0.700
0.850 x 0.280
0.350 x 0.700
1.600 x 0.050
0.220 x 0.280
1.600 x 0.050
0.220 x 0.280
0.220 x 0.600
0.930 x 0.600
0.050 x 0.600
1.000 x 0.120
0.150 x 0.028
l 2
l 3
l 4
l 5
l 6
l 7
l 8
l 9
l 10
l 11
l 12
l 13
l 14
Data Sheet
6 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
GND
VDD
R5
R6
R4
QQ1
C14
C12
C1
C4
C3
R3
C2
R2
L1
C5
C10
R1
Q1
R7
C6
C13
C25
C8
C11
C20
C22
C24
RF IN
RF OUT
C7
C21
C23
C9
C16
C18
C15
L2
C17
C19
041501in_03
041501out_03
V66100-G9267-D631-01-7631.dwg
R5
R4
QQ1
C1
C4
C3
R3
C2
R2
C5
R1
Q1
R6
R7
C8
Reference circuit assembly diagram (not to scale). Gerber files for this circuit available on request.
Data Sheet
7 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Component
Description
Suggested Manufacturer
P/N or Comment
C1, C2, C3
Capacitor, 0.001 µF
Digi-Key
Digi-Key
Digi-Key
ATC
PCC1772CT-ND
PCS6106TR-ND
P4525-ND
C4
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
C5, C13, C18
C6
Ceramic capacitor, 120 pF
Ceramic capacitor, 100 pF
Ceramic capacitor, 11 pF
Ceramic capacitor, 4.3 pF
Capacitor, 1.0 µF
100B 121
C7, C10, C15, C25
ATC
100B 101
C8, C22, C23
ATC
100B 110
C9
ATC
100B 4R3
C11, C16
ATC
920C105
C12, C14, C17, C19
Capacitor, 10 µF, 50 V
Ceramic capacitor, 5.6 pF
Ceramic capacitor, 5.1 pF
Ceramic capacitor, 8.2 pF
Ferrite, 6 mm
Garrett Electronics
ATC
TPS106K050R0400
100B 5R6
C20
C21
C24
L1, L2
Q1
ATC
100B 5R1
ATC
100B 8R2
Ferroxcube
Infineon Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
53/3/4.6-452
BCP56
Transistor
QQ1
R1
Voltage regulator
LM7805
Chip resistor, 1.2k ohms
Chip resistor, 1.3k ohms
Chip resistor, 2k ohms
Potentiometer, 2k ohms
Chip resistor, 3.3k ohms
Chip resistor, 10 ohms
Chip resistor, 5.1k ohms
P1.2KGCT-ND
P1.3KGCT-ND
P2.0KECT-ND
3224W-202ETR-ND
P3.3KECT-ND
P10ECT-ND
P5.1KECT-ND
R2
R3
R4
R5
R6
R7
Data Sheet
8 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36248-2
(45° X 2.72
[.107])
C
L
4.83±0.51
[.190±.020]
D
S
FLANGE 9.78
[.385]
LID 9.40 +0.10
C
L
–0.15
19.43 ±0.51
[.765±.020]
[.370+.004
]
–.006
2X R1.63
[R.064]
G
4X R1.52
[R.060]
2X 12.70
[.500]
27.94
[1.100]
19.81±0.20
[.780±.008]
SPH 1.57
[.062]
1.02
[.040]
C
L
3.61±0.38
[.142±.015]
34.04
[1.340]
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch]
Data Sheet
9 of 11
Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37248-2
( 45° X 2.72
C
L
[.107])
4.83±0.51
[.190±.020]
D
+0.10
–0.15
19.43±0.51
[.765±.020]
LID 9.40
[.370
+.004
]
C
L
–.006
FLANGE 9.78
[.385]
G
+0.381
–0.127
4X R0.508
[R.020
+.015
]
–.005
2X 12.70
[.500]
19.81±0.20
[.780±.008]
C
L
SPH 1.57
[.062]
1.02
[.040]
S
20.57
[.810]
3.61±0.38
[.142±.015]
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 01.1, 2010-01-20
PTFA041501EF V4
Confidential, Limited Internal Distribution
Revision History:
2010-01-20
Data Sheet
none
PreviousVersion:
Page
Subjects (major changes since last revision)
Minor cosmetic changes only
6, 9, 10
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
®
GOLDMOS is a registered trademark of Infineon Technologies AG.
Edition 2010-01-20
Published by
InfineonTechnologies AG
81726 Munich, Germany
© 2009 InfineonTechnologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 01.1, 2010-01-20
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