SPA15N60CFD [INFINEON]
CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode; CoolMOSTM功率晶体管特性的内在快速恢复体二极管
| 型号： | SPA15N60CFD |
| 厂家： | 
Infineon |
| 描述： | CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode |
| 文件： | 总12页 (文件大小：338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPA15N60CFD
CoolMOSTM Power Transistor
Product Summary
DS @ Tjmax
R DS(on),max
I D
Features
V
650
0.330
13.4
V
Ω
A
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
PG-TO220FP
• Extreme dv /dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
CoolMOS CFD designed for:
• Softswitching PWM Stages
• LCD & CRT TV
Type
Package
Marking
SPA15N60CFD
PG-TO220FP
15N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
13.4
8.4
Parameter
Symbol Conditions
Unit
Continuous drain current2)
I D
T C=25 °C
T C=100 °C
T C=25 °C
A
Pulsed drain current3)
I D,pulse
E AS
33
I D=6.7 A, V DD=50 V
I D=13.4 A, V DD=50 V
Avalanche energy, single pulse
460
mJ
Avalanche energy, repetitive3),4)
Avalanche current, repetitive3),4)
E AR
I AR
0.8
13.4
A
I D=13.4 A,
80
Drain source voltage slope
dv /dt
V/ns
V
DS=480 V, T j=125 °C
40
Reverse diode dv /dt
dv /dt
V/ns
I S=13.4 A, V DS=480 V,
T j=125 °C
600
Maximum diode commutation speed di /dt
A/µs
V
V GS
±20
±30
Gate source voltage
static
AC (f >1 Hz)
T C=25 °C
P tot
34
-55 ... 150
50
Power dissipation
W
T j, T stg
Operating and storage temperature
Mounting torque
°C
M2.5 screws
page 1
Ncm
Rev. 1.0
2007-01-10
SPA15N60CFD
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
3.7
62
K/W
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature, wave
soldering only allowed at leads
1.6 mm (0.063 in.)
from case for 10 s
T sold
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V (BR)DS
V
V
GS=0 V, I D=250 µA
GS=0 V, I D=13.4 A
Drain-source breakdown voltage
Avalanche breakdown voltage
600
-
-
-
-
V
700
V GS(th)
V
DS=V GS, I D=750 µA
Gate threshold voltage
3
-
4
5
-
V
DS=600 V, V GS=0 V,
I DSS
Zero gate voltage drain current
1.4
µA
T j=25 °C
V
DS=600 V, V GS=0 V,
-
-
-
1200
-
-
T j=150 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=9.4 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
0.28
0.33
Ω
T j=25 °C
V
GS=10 V, I D=9.4 A,
-
-
-
0.78
1.3
8
-
-
T j=150 °C
R G
g fs
Gate resistance
f =1 MHz, open drain
|V DS|>2|I D|R DS(on)max
I D=9.4 A
,
Transconductance
-
S
Rev. 1.0
page 2
2007-01-10
SPA15N60CFD
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
C iss
-
-
1820
520
-
-
pF
C oss
Output capacitance
V
GS=0 V, V DS=25 V,
f =1 MHz
C rss
Reverse transfer capacitance
-
-
21
61
-
-
Effective output capacitance, energy
related5)
C o(er)
V
GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related6)
C o(tr)
t d(on)
-
-
110
43
-
-
Turn-on delay time
ns
V
V
DD=400 V,
t r
Rise time
-
-
-
24
47
5
-
-
-
GS=10 V, I D=13.4 A,
t d(off)
t f
R G=3.6 Ω
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q gs
-
-
-
-
11
38
63
7.3
-
-
nC
V
V
DD=480 V,
I D=13.4 A,
GS=0 to 10 V
Q gd
Q g
Gate charge total
84
-
V
V plateau
Gate plateau voltage
1) J-STD20 and JESD22
2) Limited only by maximum temperature
3) Pulse width t p limited by T j,max
4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
5) C o(er) is a fixed capacitance that gives the same stored energy asC oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 80% V DSS.
Rev. 1.0
page 3
2007-01-10
SPA15N60CFD
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Reverse Diode
Diode continuous forward current2)
Diode pulse current3)
I S
-
-
-
-
13.4
33
A
V
T C=25 °C
I S,pulse
V
GS=0 V, I F=I S,
V SD
Diode forward voltage
-
1.0
1.2
T j=25 °C
t rr
Reverse recovery time
-
-
147
1
-
-
ns
V R=480 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
µC
I rrm
Peak reverse recovery current
-
-
12
-
-
A
Peak rate of fall of reverse recovery
current
di rr / dt T j=25 °C
1200
A/µs
Rev. 1.0
page 4
2007-01-10
SPA15N60CFD
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P
tot=f(T C)
102
40
limited by on-state
resistance
1 µs
30
20
10
10 µs
101
100 µs
1 ms
10 ms
DC
100
10-1
0
0
100
101
102
103
40
80
120
160
T
C [°C]
V
DS [V]
3 Max. transient thermal impedance
I D=f(V DS); T j=25 °C
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
35
20 V
10 V
30
25
20
15
10
5
0.5
100
8 V
0.2
0.1
0.05
0.02
7 V
10-1
0.01
6.5 V
single pulse
6 V
5.5 V
5 V
10-2
0
10-5
10-4
10-3
10-2
10-1
100
101
0
5
10
15
20
t
p [s]
V
DS [V]
Rev. 1.0
page 5
2007-01-10
SPA15N60CFD
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
6 Typ. drain-source on-state resistance
DS(on)=f(I D); T j=150 °C
R
parameter: V GS
20
15
10
5
2
20 V
8 V
10 V
1.6
1.2
7 V
6.5 V
7 V
6 V
5 V
5.5 V
6.5 V
6 V
10 V
20 V
0.8
0.4
5.5 V
5 V
0
0
0
0
5
10
15
20
2
4
6
8
10
12
V
DS [V]
ID [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
R
DS(on)=f(T j); I D=9.4 A; V GS=10 V
1
50
40
30
20
10
0
25 °C
0.8
0.6
150 °C
98 %
0.4
typ
0.2
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
12
T j [°C]
V
GS [V]
Rev. 1.0
page 6
2007-01-10
SPA15N60CFD
9 Typ. gate charge
GS=f(Q gate); I D=13.4 A pulsed
10 Forward characteristics of reverse diode
I F=f(V SD
V
)
parameter: V DD
parameter: T j
102
10
120 V
480 V
8
6
4
2
150 °C, 98%
25 °C
101
150 °C
25 °C, 98%
100
10-1
0
0
0
0.5
1
1.5
2
20
40
60
80
Q
gate [nC]
V
SD [V]
11 Avalanche SOA
AR=f(t AR
12 Avalanche energy
I
)
E
AS=f(T j); I D=6.7 A; V DD=50 V
parameter: T j(start)
14
480
420
360
300
240
180
120
60
12
10
8
6
25 °C
125 °C
4
2
0
0
10-3
10-2
10-1
100
101
102
103
104
25
75
125
175
t
AR [µs]
T j [°C]
Rev. 1.0
page 7
2007-01-10
SPA15N60CFD
13 Drain-source breakdown voltage
14 Typ. capacitances
V
BR(DSS)=f(T j)
C =f(V DS); V GS=0 V; f =1 MHz
104
700
Ciss
103
660
620
580
102
Coss
Crss
101
100
540
-60
0
100
200
300
400
500
-20
20
60
100
140
180
T j [°C]
V DS [V]
15 Typ. C oss stored energy
16 Typ. reverse recovery charge
E
oss= f(V DS
)
Q rr=f(T j);parameter: I D =13.4 A
12
10
8
2
1.8
1.6
1.4
1.2
1
6
4
2
0
0
100
200
300
400
500
600
25
50
75
100
125
V
DS [V]
T j [°C]
Rev. 1.0
page 8
2007-01-10
SPA15N60CFD
17 Typ. reverse recovery charge
18 Typ. reverse recovery charge
Q rr=f(I S); parameter: di/ dt =100 A/µs
Q rr=f(di /dt ); parameter: I D=13.4 A
2
1.8
1.6
3
2.5
125 °C
125 °C
1.4
2
1.2
1
1.5
25 °C
25 °C
0.8
1
0.5
0
0.6
0.4
0.2
0
4
6
8
10
12
100
200
300
400
500
I
S [A]
d i/d t [A/µs]
Rev. 1.0
page 9
2007-01-10
SPA15N60CFD
Definition of diode switching characteristics
Rev. 1.0
page 10
2007-01-10
SPA15N60CFD
PG-TO-220-3--31; -3-111: Outlines/Fully isolated package (2500VAC; 1minute)
Dimensions in mm/ inches
Rev. 1.0
page 11
2007-01-10
SPA15N60CFD
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologies
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 1.0
page 12
2007-01-10
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