SPA15N65C3XKSA1 [INFINEON]
Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN;
| 型号： | SPA15N65C3XKSA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN 局域网 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPA15N65C3
CoolMOSTM Power Transistor
Features
Product Summary
V DS
650
0.28
63
V
• Low gate charge
R DS(on),max
Q g,typ
Ω
• Extreme dv/dt rated
nC
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
PG-TO220-3-31
Type
Package
Marking
SPA15N65C3
PG-TO220-3-31 15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
15
Parameter
Symbol Conditions
Unit
Continuous drain current2)
I D
T C=25 °C
T C=100 °C
T C=25 °C
A
9.4
Pulsed drain current3)
45
I D,pulse
E AS
I D=3 A, V DD=50 V
Avalanche energy, single pulse
460
mJ
2),3)
3),4)
E AR
I D=5 A, V DD=50 V
0.8
5.0
Avalanche energy, repetitive t AR
I AR
A
Avalanche current, repetitive t AR
V
DS=0...480 V
50
±20
MOSFET dv /dt ruggedness
dv /dt
V/ns
V
V GS
Gate source voltage
static
±30
AC (f >1 Hz)
T C=25 °C
P tot
34
Power dissipation
W
T j, T stg
-55 ... 150
50
Operating and storage temperature
Mounting torque
°C
M3 and M3.5 screws
page 1
Ncm
Rev. 2.0
2008-03-12
SPA15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
15
Parameter
Symbol Conditions
Unit
Continuous diode forward current2)
Diode pulse current3)
I S
A
T C=25 °C
I S,pulse
45
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
3.7
62
K/W
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
1.6 mm (0.063 in.)
from case for 10 s
T sold
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=250 µA
DS=V GS
Drain-source breakdown voltage
Gate threshold voltage
650
2.1
-
-
V
,
3
3.9
I D=0.675 mA
V
DS=600 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
0.5
25
-
µA
T j=25 °C
V
DS=600 V, V GS=0 V,
-
-
-
25
-
T j=150 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=9.4 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
0.25
0.28
Ω
T j=25 °C
V
GS=10 V, I D=9.4 A,
-
-
0.68
1.4
-
T j=150 °C
R G
Gate resistance
f =1 MHz, open drain
-
Ω
Rev. 2.0
page 2
2008-03-12
SPA15N65C3
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
-
-
1600
540
-
-
pF
V
GS=0 V, V DS=25 V,
f =1 MHz
C oss
Effective output capacitance, energy
related5)
C o(er)
-
-
67
-
-
V
GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related6)
C o(tr)
120
t d(on)
t r
t d(off)
t f
Turn-on delay time
Rise time
-
-
32
14
-
-
ns
V
V
DD=400 V,
GS=10 V, I D=15 A,
R G=6.8 Ω
Turn-off delay time
Fall time
-
-
70
11
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
9
-
-
nC
Q gd
29
63
5.4
V
V
DD=480 V, I D=15 A,
GS=0 to 10 V
Q g
V plateau
Gate plateau voltage
-
V
V
Reverse Diode
V
GS=0 V, I F=15 A,
V SD
Diode forward voltage
-
1.0
1.2
T j=25 °C
t rr
Reverse recovery time
-
-
-
420
8
-
-
-
ns
µC
A
V R=480 V, I F=I S,
di F/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
32
1) J-STD20 and JESD22
2) Limited only by maximum temperature.
3) Pulse width t p limited by T j,max
4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
5) C o(er) is a fixed capacitance that gives the same stored energy asC oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2008-03-12
SPA15N65C3
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P
tot=f(T C)
102
35
30
25
20
15
10
5
limited by on-state
resistance
1 µs
10 µs
101
100 µs
1 ms
10 ms
100
DC
10-1
0
0
100
101
102
103
40
80
120
160
T
C [°C]
V
DS [V]
3 Max. transient thermal impedance
(thJC)=f(tp)
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
Z
parameter: D=t p/T
parameter: V GS
101
50
40
30
20
10
0
20 V
10 V
8 V
0.5
7 V
6 V
100
0.2
0.1
0.05
5.5 V
10-1
0.02
0.01
5 V
single pulse
4.5 V
10-2
0
5
10
15
20
25
t
p [s]
V DS [V]
Rev. 2.0
page 4
2008-03-12
SPA15N65C3
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
6 Typ. drain-source on-state resistance
DS(on)=f(I D); T j=150 °C
R
parameter: V GS
25
20
15
10
5
4
20 V
10 V
8 V
7 V
6 V
5.5 V
3
2
1
6 V
7 V
5 V
6.5 V
5.5 V
20 V
4.5 V
5 V
0
0
0
0
5
10
V
15
DS [V]
20
25
10
20
30
ID [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
R
DS(on)=f(T j); I D= 9.4 A; V GS=10 V
0.8
50
40
30
20
10
0
25°C
0.6
0.4
150°C
typ
98 %
0.2
0
-50
0
50
100
150
0
2
4
6
8
10
T j [°C]
V GS [V]
Rev. 2.0
page 5
2008-03-12
SPA15N65C3
9 Typ. gate charge
GS=f(Q gate); I D= 15 A pulsed
10 Forward characteristics of reverse diode
I F=f(V SD
V
)
parameter: V DD
parameter: T j
102
10
9
8
7
6
5
4
3
2
1
150 °C, 98%
120 V
25 °C
480 V
101
25 °C, 98%
150 °C
100
0
0
0
0.5
1
1.5
2
20
40
60
80
Q
gate [nC]
V
SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS=f(T j); I D=3 A; V DD=50 V
V
BR(DSS)=f(T j); I D=0.25 mA
500
740
720
700
680
660
640
620
600
580
400
300
200
100
0
20
60
100
140
180
-50
-10
30
70
110
150
T j [°C]
T j [°C]
Rev. 2.0
page 6
2008-03-12
SPA15N65C3
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
105
104
12
9
6
3
Ciss
103
Coss
102
Crss
101
100
0
0
0
100
200
300
DS [V]
400
500
100
200
300
400
500
600
V
V
DS [V]
Rev. 2.0
page 7
2008-03-12
SPA15N65C3
Definition of diode switching characteristics
Rev. 2.0
page 8
2008-03-12
SPA15N65C3
PG-TO220-3-31/-3-111: Outline/Fully isolated package (2500VAC; 1 minute)
Rev. 2.0
page 9
2008-03-12
SPA15N65C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 10
2008-03-12
相关型号：
SPA16N50C3XKSA1
Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
INFINEON
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