SPB02N60S5_07 [INFINEON]

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology; 酷MOS ™功率晶体管提供新的革命性的高电压技术


型号：	SPB02N60S5_07
厂家：	Infineon
描述：	Cool MOS™ Power Transistor Feature New revolutionary high voltage technology 酷MOS ™功率晶体管提供新的革命性的高电压技术晶体晶体管
文件：	总10页 (文件大小：342K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SPB02N60S5

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

600

1.8

Ω

DS(on)

• Ultra low gate charge

PG-TO263

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

Type

SPB02N60S5

Package

PG-TO263

Ordering Code

Q67040-S4212

Marking

02N60S5

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

1.8

1.1

3.2

T = 100 °C

Pulsed drain current, t limited by T

Avalanche energy, single pulse

jmax

D puls

I = 1.35 A, V = 50 V

jmax

0.07

1.8

Avalanche energy, repetitive t limited by T

I = 1.8 A, V = 50 V

Avalanche current, repetitive t limited by T

jmax AR

Gate source voltage

±20

Gate source voltage AC (f >1Hz)

tot

Power dissipation, T = 25°C

°C

Operating and storage temperature

T , T

-55... +150

stg

Page 1

Rev. 2.4

2007-02-14

SPB02N60S5

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain Source voltage slope

dv/dt

V/ns

= 480 V, I = 1.8 A, T = 125 °C

D j

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ. max.

K/W

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

thJC

thJA

@ 6 cm cooling area

Soldering temperature, reflow soldering, MSL1

260 °C

sold

1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ. max.

=0V, I =0.25mA 600

Drain-source breakdown voltage

Drain-Source avalanche

breakdown voltage

(BR)DSS GS

=0V, I =1.8A

700

(BR)DS

I =80µΑ, V =V

3.5

4.5

5.5

Gate threshold voltage

Zero gate voltage drain current

GS DS

GS(th)

=600V, V =0V,

µA

DSS

T =25°C,

0.5

T =150°C

=20V, V =0V

100 nA

Gate-source leakage current

Drain-source on-state resistance R

GSS

=10V, I =1.1A,

Ω

DS(on)

T =25°C

2.7

7.3

T =150°C

Page 2

Rev. 2.4

2007-02-14

SPB02N60S5

Electrical Characteristics , at T = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

typ. max.

Unit

min.

Characteristics

Transconductance

≥2*I *R ,

DS(on)max

1.4

I =1.1A

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

=0V, V =25V,

240

4.4

iss

f=1MHz

oss

rss

=350V, V =0/10V,

d(on)

I =1.8A, R =50Ω

Turn-off delay time

Fall time

d(off)

Gate Charge Characteristics

Gate to source charge

=350V, I =1.8A

2.3

4.5

7.3

Gate to drain charge

=350V, I =1.8A,

9.5

Gate charge total

=0 to 10V

=350V, I =1.8A

Gate plateau voltage

V_(plateau)

Repetitve avalanche causes additional power losses that can be calculated asP =E *f.

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 3

Rev. 2.4

2007-02-14

SPB02N60S5

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

typ. max.

Unit

min.

T =25°C

1.8

3.2

1.2

Inverse diode continuous

forward current

Inverse diode direct current,

pulsed

=0V, I =I

F S

Inverse diode forward voltage

Reverse recovery time

V =350V, I =I ,

860 1460 ns

1.6 µC

F S

di /dt=100A/µs

Reverse recovery charge

Typical Transient Thermal Characteristics

Symbol

Value

typ.

Unit

Symbol

Value

typ.

Unit

Thermal resistance

Thermal capacitance

0.1

K/W

0.00002806

0.0001113

0.0001679

0.000547

0.001388

0.019

R_th5

Ws/K

th1

th2

th3

th4

th1

0.184

0.306

1.207

0.974

0.251

th2

th3

th4

th5

th6

External Heatsink

T_j

R_th1

R_th,n

T_case

P_tot(t)

C_th1

C_th2

C_th,n

T_amb

Page 4

Rev. 2.4

2007-02-14

SPB02N60S5

1 Power dissipation

= f (T )

2 Safe operating area

I = f ( V

)

tot

parameter : D = 0 , T =25°C

10 ¹

SPP02N60S5

10 ⁰

tp = 0.001 ms

10 ^-1

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

10 ^-2

80 100 120

160

10 ⁰

10 ¹

10 ²

10 ³

°C

3 Typ. output characteristic

I = f (V ); T =25°C

4 Drain-source on-state resistance

= f (T )

DS(on)

parameter: t = 10 µs, V

parameter : I = 1.1 A, V = 10 V

SPP02N60S5

20V

12V

Ω

10V

8.5V

98%

7.5V

typ

°C

-60

-20

100

180

Page 5

Rev. 2.4

2007-02-14

SPB02N60S5

5 Typ. transfer characteristics

I = f ( V ); V ≥ 2 x I x R

6 Typ. gate charge

= f (Q

)

Gate

DS(on)max

parameter: t = 10 µs

parameter: I = 1.8 A pulsed

SPP02N60S5

0.2 V_{DS max}

0.8 V_{DS max}

Gate

7 Forward characteristics of body diode

I = f (V )

8 Avalanche SOA

= f (t )

parameter: T , tp = 10 µs

par.: T ≤ 150 °C

10 ¹

SPP02N60S5

1.6

1.4

1.2

=25°C

j(START)

10 ⁰

0.8

=125°C

j(START)

10 ^-1

0.6

0.4

0.2

T_j= 25 °C typ

T_j= 150 °C typ

T_j= 25 °C (98%)

T_j= 150 °C (98%)

10 ^-2

0.4

0.8

1.2

1.6

2.4

10 ^-310 ^-210 ^-110 ⁰10 ¹10 ²

10 ⁴

µs

Page 6

Rev. 2.4

2007-02-14

SPB02N60S5

9 Avalanche energy

= f (T )

10 Drain-source breakdown voltage

= f (T )

(BR)DSS

par.: I = 1.35 A, V = 50 V

SPP02N60S5

720

680

660

640

620

600

580

560

540

100

120

160

-60

-20

100

180

°C

11 Typ. capacitances

C = f (V )

parameter: V =0V, f=1 MHz

10 ⁴

10 ³

iss

10 ²

10 ¹

10 ⁰

oss

rss

10 20 30 40 50 60 70 80

100

Page 7

Rev. 2.4

2007-02-14

SPB02N60S5

Definition of diodes switching characteristics

Page 8

Rev. 2.4

2007-02-14

SPB02N60S5

PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22

Page 9

Rev. 2.4

2007-02-14

SPB02N60S5

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device

or system Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

Page 10

Rev. 2.4

2007-02-14

相关型号：