SPB10N10LG [INFINEON]
Power Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN;
| 型号： | SPB10N10LG |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN |
| 文件： | 总8页 (文件大小：486K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary data
SPI10N10
SPP10N10,SPB10N10
SIPMOS Power-Transistor
Product Summary
Feature
V
100
170
10.3
V
m
A
DS
N-Channel
R
DS(on)
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
I
D
P-TO262-3-1
P-TO263-3-2
P-TO220-3-1
Type
SPP10N10
Package
Ordering Code
Marking
10N10
10N10
10N10
P-TO220-3-1 Q67042-S4118
P-TO263-3-2 Q67042-S4119
P-TO262-3-1 Q67042-S4120
SPB10N10
SPI10N10
Maximum Ratings,at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T =25°C
10.3
7.8
C
T =100°C
C
41.2
60
6
Pulsed drain current
I
D puls
T =25°C
C
mJ
Avalanche energy, single pulse
E
AS
I =10.3 A , V =25V, R =25
D
DD
GS
Reverse diode dv/dt
dv/dt
kV/µs
I =10.3A, V =80V, di/dt=200A/µs, T =175°C
jmax
S
DS
Gate source voltage
Power dissipation
V
V
W
±20
50
GS
P
tot
T =25°C
C
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T , T
-55... +175
55/175/56
j
stg
Page 1
2002-01-31
Preliminary data
SPI10N10
SPP10N10,SPB10N10
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
R
R
R
-
-
-
-
3
K/W
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJC
thJA
thJA
62
-
-
-
-
62
40
2
F)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
100
2.1
typ. max.
Static Characteristics
V
-
-
V
Drain-source breakdown voltage
(BR)DSS
V
=0V, I =1mA
D
GS
3
4
Gate threshold voltage, V = V
V
GS(th)
GS
DS
I = 21 µA
D
µA
Zero gate voltage drain current
I
DSS
V
=100V, V =0V, T =25°C
-
-
0.01
1
1
DS
GS
j
V
=100V, V =0V, T =125°C
100
DS
GS
j
-
1
100 nA
Gate-source leakage current
I
GSS
V
=20V, V =0V
DS
GS
-
137
170
Drain-source on-state resistance
R
m
DS(on)
V
=10V, I =7.8A
D
GS
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2002-01-31
Preliminary data
SPI10N10
SPP10N10,SPB10N10
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Dynamic Characteristics
Transconductance
g
V
2*I *R ,
DS(on)max
2.6
5.8
-
S
fs
DS
D
I =7.8A
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
V
=0V, V =25V,
-
-
-
-
-
-
-
320
72
426 pF
iss
GS
DS
C
f=1MHz
96
65
oss
C
43
rss
t
V
=50V, V =10V,
8.2
46
12
69
44
35
ns
d(on)
DD
GS
I =10.3A, R =2.2
t
D
G
r
Turn-off delay time
Fall time
t
29
d(off)
t
23
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=80V, I =10.3A
-
-
-
2.3
7.9
3
nC
V
gs
gd
g
DD
D
Gate to drain charge
11.9
19.4
V
=80V, I =10.3A,
14.6
Gate charge total
DD
D
V
=0 to 10V
GS
V
=80V, I =10.3A
-
6.4
-
Gate plateau voltage
V
DD
D
(plateau)
Reverse Diode
T =25°C
-
-
-
-
10.3 A
41.2
Inverse diode continuous
forward current
I
S
C
Inverse diode direct current,
pulsed
I
SM
V
=0V, I =10.3A
-
-
-
0.93
57
1.25 V
Inverse diode forward voltage V
GS
F
SD
Reverse recovery time
t
V =50V, I =l ,
71
ns
rr
R
F S
Reverse recovery charge
Q
di /dt=100A/µs
134
167 nC
rr
F
Page 3
2002-01-31
Preliminary data
SPI10N10
SPP10N10,SPB10N10
1 Power dissipation
= f (T )
2 Drain current
I = f (T )
P
tot
C
D
C
parameter: V
10 V
GS
SPP10N10
SPP10N10
12
A
55
W
10
9
8
7
6
5
4
3
2
1
0
45
40
35
30
25
20
15
10
5
0
0
20 40 60 80 100 120 140 160
190
0
20 40 60 80 100 120 140 160
190
°C
°C
T
T
C
C
3 Safe operating area
I = f ( V
4 Transient thermal impedance
Z = f (t )
thJC
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
C
p
10 1
10 2
SPP10N10
SPP10N10
K/W
t
= 4.9µs
p
A
10 0
10 µs
10 1
10 -1
100 µs
D = 0.50
0.20
10 -2
1 ms
10 0
0.10
0.05
single pulse
10 ms
0.02
10 -3
DC
0.01
10 -1
10 -4
10 0
10 1
10 2
10 3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
t
V
DS
p
Page 4
2002-01-31
Preliminary data
SPI10N10
SPP10N10,SPB10N10
6 Typ. drain-source on resistance
= f (I )
5 Typ. output characteristic
R
I = f (V ); T =25°C
DS(on)
D
D
DS
j
parameter: V
parameter: t = 80 µs
GS
p
25
400
g
h
VGS[V]=
m
a= 5
b= 5.5
c= 6
d= 6.5
e= 7
f= 8
a
b
c
d
e
V
[V]=
f
GS
A
f
a= 5
b= 5.5
c= 6
d= 6.5
e= 7
f= 8
300
250
200
150
100
50
15
g= 9
h= 10
g
h
e
g= 9
h= 10
10
5
d
c
b
a
0
0
0
2
4
6
8
10
13
0
5
10
15
20
25
35
V
A
I
V
D
DS
7 Typ. transfer characteristics
8 Typ. forward transconductance
g = f(I ); T =25°C
I = f ( V ); V
2 x I x R
D DS(on)max
D
GS
DS
fs
D
j
parameter: t = 80 µs
parameter: g
p
fs
7
12
S
A
5
4
3
2
1
0
8
6
4
2
0
0
1
2
3
4
5
7
0
1
2
3
4
5
6
7
8
10
V
A
I
V
GS
D
Page 5
2002-01-31
Preliminary data
SPI10N10
SPP10N10,SPB10N10
9 Drain-source on-state resistance
= f (T )
10 Typ. gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter : I = 7.8 A, V = 10 V
parameter: V = V
GS DS
D
GS
SPP10N10
4
750
m
V
600
550
500
450
400
350
300
250
200
150
100
50
I =1mA
D
3
2.5
2
98%
typ
I =21µA
D
0
1.5
°C
-60
-20
20
60
100
140
200
-65 -35
-5
25
55
85 115
175
°C
T
T
j
j
11 Typ. capacitances
C = f (V
12 Forward character. of reverse diode
I = f (V
)
)
SD
DS
F
parameter: V =0V, f=1 MHz
parameter: T , tp = 80 µs
GS
j
10 3
10 2
SPP10N10
A
pF
C
iss
10 1
10 2
C
C
oss
rss
10 0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 1
10 -1
0
5
10
15
20
25
30
40
0
0.4
0.8
1.2
1.6
2
2.4
3
V
V
V
V
DS
SD
Page 6
2002-01-31
Preliminary data
SPI10N10
SPP10N10,SPB10N10
13 Typ. avalanche energy
= f (T )
14 Typ. gate charge
= f (Q
E
V
)
Gate
AS
j
GS
par.: I = 10.3 A , V = 25 V, R = 25
parameter: I = 10.3 A pulsed
D
DD
GS
D
SPP10N10
60
16
mJ
V
50
45
40
35
30
25
20
15
10
5
12
V
0,2
DS max
0,8 VDS max
10
8
6
4
2
0
0
25
45
65
85 105 125 145
185
0
4
8
12
16
24
Gate
°C
nC
Q
T
j
15 Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
SPP10N10
120
V
114
112
110
108
106
104
102
100
98
96
94
92
90
-60
-20
20
60
100
140
200
°C
T
j
Page 7
2002-01-31
Preliminary data
SPI10N10
SPP10N10,SPB10N10
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
2002-01-31
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