SPB18P06P [INFINEON]
SIPMOS Power-Transistor; SIPMOS功率三极管
| 型号： | SPB18P06P |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Power-Transistor |
| 文件： | 总9页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPP18P06P
SPB18P06P
Preliminary data
SIPMOS Power-Transistor
Features
Product Summary
P-Channel
Drain source voltage
V
-60
0.13
-18.6
V
A
DS
Enhancement mode
Avalanche rated
dv/dt rated
Drain-source on-state resistance R
DS(on)
Continuous drain current
I
D
175°C operating temperature
Type
Package
Ordering Code
Pin 1 PIN 2/4 PIN 3
SPP18P06P
SPB18P06P
P-TO220-3-1 Q67040-S4182
P-TO263-3-2 Q67040-S4191
G
D
S
Maximum Ratings,at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
Continuous drain current
I
D
A
T = 25 °C
-18.6
-13.2
C
T = 100 °C
C
Pulsed drain current
I
-74.4
D puls
T = 25 °C
C
Avalanche energy, single pulse
E
150
mJ
AS
I = -18.6 A , V = -25 V, R = 25
D
DD
GS
Avalanche energy, periodic limited by T
E
8
6
jmax
AR
Reverse diode dv/dt
dv/dt
kV/µs
I = -18.6 A, V = -48 V, di/dt = 200 A/µs,
S
DS
T
= 175 °C
jmax
Gate source voltage
Power dissipation
V
P
±20
80
V
GS
tot
W
T = 25 °C
C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T , T
-55...+175
55/175/56
°C
j
stg
Page 1
1999-11-22
SPP18P06P
SPB18P06P
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
R
-
-
-
-
1.85 K/W
62
thJC
R
thJA
R
thJA
-
-
-
-
62
40
2
1)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
-60
max.
Static Characteristics
Drain- source breakdown voltage
V
V
-
-
V
(BR)DSS
GS(th)
V
= 0 V, I = -250 µA
D
GS
Gate threshold voltage, V = V
-2.1
-3
-4
GS
DS
I = -1 mA
D
Zero gate voltage drain current
I
µA
DSS
V
V
= -60 V, V = 0 V, T = 25 °C
-
-
-0.1
-10
-1
DS
DS
GS
j
= -60 V, V = 0 V, T = 150 °C
-100
GS
j
Gate-source leakage current
= -20 V, V = 0 V
I
-
-10
-100 nA
GSS
V
GS
DS
Drain-source on-state resistance
R
DS(on)
-
0.1
0.13
V
= -10 V, I = -13.2 A
D
GS
1
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
1999-11-22
SPP18P06P
SPB18P06P
Preliminary data
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
4
-
8
-
S
fs
V
2*I *R
, I = -13.2 A
DS(on)max D
DS
D
Input capacitance
= 0 V, V = -25 V, f = 1 MHz
C
690
230
95
860 pF
290
iss
V
GS
DS
Output capacitance
= 0 V, V = -25 V, f = 1 MHz
C
-
oss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = -25 V, f = 1 MHz
C
-
120
rss
V
GS
DS
Turn-on delay time
= -30 V, V = -10 V, I = -13.2 A,
t
-
12
18
8.7
37
ns
d(on)
V
DD
GS
D
R = 2.7
G
Rise time
t
-
-
-
5.8
24.5
11
r
V
= -30 V, V = -10 V, I = -13.2 A,
GS D
DD
R = 2.7
G
Turn-off delay time
= -30 V, V = -10 V, I = -13.2 A,
t
d(off)
V
DD
GS
D
R = 2.7
G
Fall time
t
16.5
f
V
= -30 V, V = -10 V, I = -13.2 A,
GS D
DD
R = 2.7
G
Page 3
1999-11-22
SPP18P06P
SPB18P06P
Preliminary data
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Gate to source charge
Q
Q
-
-
-
-
4.4
9.3
6.6
14
33
-
nC
gs
V
= -48 , I = -18.6 A
D
DD
Gate to drain charge
= -48 V, I = -18.6 A
gd
V
DD
D
Gate charge total
= -48 V, I = -18.6 , V = 0 to -10 V
Q
22
g
V
DD
D
GS
Gate plateau voltage
= -48 , I = -18.6 A
V
-5.56
V
(plateau)
V
DD
D
Parameter
Symbol
Values
typ.
Unit
min.
max.
-18.6
-74.4
-1.33
Reverse Diode
Inverse diode continuous forward current
I
-
-
-
-
-
-
-
A
S
T = 25 °C
C
Inverse diode direct current,pulsed
I
SM
T = 25 °C
C
Inverse diode forward voltage
V
-1
V
SD
V
= 0 V, I = -18.6 A
F
GS
Reverse recovery time
V = -30 V, I =I , di /dt = 100 A/µs
t
70
139
105 ns
208 nC
rr
R
F
S
F
Reverse recovery charge
V = -30 V, I =l , di /dt = 100 A/µs
Q
rr
R
F S
F
Page 4
1999-11-22
SPP18P06P
SPB18P06P
Preliminary data
Power dissipation
Drain current
I = f (T )
P
= f (T )
C
tot
D
C
parameter: V
10 V
GS
SPP18P06P
SPP18P06P
-20
90
A
W
-16
-14
-12
-10
-8
70
60
50
40
30
20
10
0
P
I
-6
-4
-2
0
°C
°C
190
0
20 40 60 80 100 120 140 16
190
0
20 40 60 80 100 120 140 160
T
T
C
C
Safe operating area
I = f ( V
Transient thermal impedance
Z = f (t )
thJC
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
C
p
SPP18P06P
SPP18P06P
-10 2
10 1
t
= 29.0µs
p
K/W
10 0
A
100 µs
10 -1
I
Z
-10 1
D = 0.50
0.20
10 -2
I
0.10
1 ms
V
0.05
0.02
10 -3
R
10 ms
0.01
single pulse
DC
-10 0
10 -4
-10 -1
-10 0
-10 1
-10 2
DS
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
V
t
p
Page 5
1999-11-22
SPP18P06P
SPB18P06P
Preliminary data
Typ. output characteristic
I = f (V ); T =25°C
Typ. drain-source-on-resistance
= f (I )
R
D
DS
j
DS(on)
D
parameter: t = 80 µs
parameter: V
GS
p
SPP18P06P
SPP18P06P
-50
0.42
Ptot = 80.00W
a
b
c
d
e
f
g
h
A
V
[V]
GS
a
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
-8.0
-9.0
-10.0
-20.0
l
-40
k
j
b
c
d
e
f
i
-35
h
I
R
-30
g
g
h
i
f
-25
-20
-15
-10
-5
e
j
k
l
i
d
b
j
k
l
c
a
V
[V] =
b
GS
a
c
d
e
f
g
h
i
j
k
l
-4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0-20.0
0
V
A
D
0
-1 -2 -3 -4 -5 -6 -7 -8
-10
DS
0
-4
-8 -12 -16 -20 -24 -28 -32
-38
V
I
Typ. transfer characteristics I = f ( V
)
GS
Typ. forward transconductance
g = f(I ); T =25°C
D
V
2 x I x R
D DS(on)max
DS
fs
D
j
parameter: t = 80 µs
parameter: g
p
fs
10
-40
S
A
8
7
-30
-25
6
I
g
5
4
3
2
1
0
-20
-15
-10
-5
0
V
A
0
-1 -2 -3 -4 -5 -6 -7 -8
-10
0
-5
-10
-15
-20
-30
V
GS
I
D
Page 6
1999-11-22
SPP18P06P
SPB18P06P
Preliminary data
Drain-source on-state resistance
= f (T )
Gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter : I = -13.2 A, V = -10 V
parameter: V = V , I = -1 mA
GS DS D
D
GS
SPP18P06P
0.38
-5.0
V
-4.4
-4.0
-3.6
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
R
V
max
98%
typ
typ
min
°C
V
-60
-20
20
60
100
140
200
-60
-20
20
60
100
140
200
T
T
j
j
Typ. capacitances
C = f (V )
Forward characteristics of reverse diode
I = f (V )
DS
F
SD
parameter: V =0V, f=1 MHz
parameter: T , tp = 80 µs
GS
j
SPP18P06P
10 4
-10 2
pF
A
10 3
-10 1
C
iss
I
C
C
C
oss
rss
10 2
-10 0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 1
-10 -1
0.0
V
V
0
-5
-10
-15
-20
-25
-35
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
-3.0
V
V
DS
SD
Page 7
1999-11-22
SPP18P06P
SPB18P06P
Preliminary data
Avalanche energy
= f (T )
Typ. gate charge
= f (Q
E
V
)
Gate
AS
j
GS
para.: I = -18.6 A , V = -25 V, R = 25
parameter: I = -18.6 A pulsed
D
DD
GS
D
SPP18P06P
160
-16
mJ
V
120
100
80
60
40
20
0
-12
-10
V
E
V
V
DS max
0,2
0,8
DS max
-8
-6
-4
-2
0
25
45
65
85 105 125 145
185
0
4
8
12
16
20
24
28
34
°C
nC
T
j
Q
Gate
Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
SPP18P06P
-72
V
-68
-66
-64
-62
-60
-58
-56
-54
V
°C
-60
-20
20
60
100
140
200
T
j
Page 8
1999-11-22
SPP18P06P
SPB18P06P
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 9
1999-11-22
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