SPB70N10L [INFINEON]
SIPMOS Power-Transistor; SIPMOS功率三极管
| 型号： | SPB70N10L |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Power-Transistor |
| 文件： | 总8页 (文件大小：515K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
SIPMOS =Power-Transistor
Product Summary
Feature
V
100
16
V
m
A
DS
N-Channel
Enhancement mode
Logic Level
R
I
70
D
P-TO262-3-1
P-TO263-3-2
P-TO220-3-1
175°C operating temperature
Avalanche rated
dv/dt rated
Type
Package
Ordering Code
Marking
70N10L
70N10L
70N10L
SPP70N10L
SPB70N10L
SPI70N10L
P-TO220-3-1 Q67040-S4175
P-TO263-3-2 Q67040-S4170
P-TO262-3-1 Q67060-S7428
Maximum Ratings,at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T =25°C
70
50
C
T =100°C
C
280
Pulsed drain current
I
D puls
T =25°C
C
700
mJ
Avalanche energy, single pulse
E
AS
I =70 A , V =25V, R =25
D
DD GS
E
25
6
Avalanche energy, periodic limited by T
Reverse diode dv/dt
AR
jmax
dv/dt
kV/µs
I =70A, V =0V, di/dt=200A/µs
DS
S
Gate source voltage
Power dissipation
V
V
W
±20
250
GS
P
tot
T =25°C
C
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T , T
-55... +175
55/175/56
Page 1
2001-08-24
Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
R
-
-
-
-
0.6 K/W
62.5
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJC
R
thJA
R
thJA
-
-
-
-
62
40
2
@ 6 cm cooling area 1)
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
100
1.2
typ. max.
Static Characteristics
Drain-source breakdown voltage
V
-
-
V
(BR)DSS
V
=0V, I =2mA
GS
D
1.6
2
Gate threshold voltage, V = V
V
GS(th)
GS
DS
I = 2 mA
D
µA
Zero gate voltage drain current
I
DSS
V
=100V, V =0V, T =25°C
-
-
-
0.1
-
10
1
100
100 nA
DS
GS
j
V
=100V, V =0V, T =150°C
GS
DS
j
Gate-source leakage current
I
GSS
V
=20V, V =0V
GS
DS
-
-
14
10
25
16
Drain-source on-state resistance
R
m
DS(on)
V
=4.5V, I =50A
GS
D
Drain-source on-state resistance
R
DS(on)
V
=10V, I =50A
GS
D
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2001-08-24
Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I *R ,
DS(on)max
30
65
-
S
D
I =50A
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
V
=0V, V =25V,
DS
-
-
-
-
-
-
-
3630 4540 pF
iss
GS
f=1MHz
C
640
345
70
250
250
95
800
430
105 ns
375
oss
C
rss
t
V
=50V, V =4.5V,
d(on)
DD GS
I =70A, R =1.3
t
D
G
r
Turn-off delay time
Fall time
t
375
d(off)
t
145
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
V
=80V, I =70A
-
-
-
10
34
160
15
51
240
nC
gs
DD
D
Q
gd
V
=80V, I =70A,
Gate charge total
Q
DD
D
g
V
=0 to 10V
GS
V
=80V, I =70A
-
3.22
-
V
A
Gate plateau voltage
V
DD
D
Reverse Diode
Inverse diode continuous
forward current
T =25°C
-
-
-
-
70
280
1.8
I
C
S
Inverse diode direct current,
I
SM
pulsed
V
=0V, I =140A
-
-
-
1.2
100
600
V
Inverse diode forward voltage V
Reverse recovery time
GS
F
SD
t
rr
V =50V, I =l ,
R
150 ns
900 nC
F S
di /dt=100A/µs
Reverse recovery charge
Q
rr
F
Page 3
2001-08-24
Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
1 Power dissipation
= f (T )
2 Drain current
I = f (T )
P
tot
C
D
C
parameter: V
10 V
GS
SPP70N10L
SPP70N10L
280
W
75
A
240
220
200
180
160
140
120
100
80
60
55
50
45
40
35
30
25
20
15
10
5
60
40
20
0
0
0
20 40 60 80 100 120 140 160
190
0
20 40 60 80 100 120 140 160
190
°C
°C
T
T
C
C
3 Safe operating area
I = f ( V
4 Transient thermal impedance
Z = f (t )
thJC
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
C
p
10 3
SPP70N10L
SPP70N10L
10 1
K/W
A
t
= 18.0µs
10 0
p
10 2
10 -1
10 -2
10 -3
100 µs
D = 0.50
0.20
10 1
0.10
1 ms
0.05
0.02
10 ms
10 -4
single pulse
0.01
DC
10 0
10 -5
10 -1
10 0
10 1
10 2
10 3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
t
V
DS
p
Page 4
2001-08-24
Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
5 Typ. output characteristic
I = f (V ); T =25°C
6 Typ. drain-source on resistance
= f (I )
R
D
DS
j
DS(on)
D
parameter: t = 80 µs
parameter: V
p
GS
SPP70N10L
SPP70N10L
170
A
80
Ptot = 250W
b
c
d
m
k
j
i
V
[V]
g
l
GS
a
h
f
e
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
10.0
140
120
100
80
b
c
d
e
f
60
50
40
30
20
10
0
d
g
h
i
c
a
j
60
k
l
40
e
b
f
g
h
j
i
k
V
[V] =
c
l
GS
b
20
d
e
f
g
h
i
j
k
l
3.0 3.5 4.0 4.5 5.0
5.5 6.0 6.5 7.0
8.0 10.0
0
0
1
2
3
4
5.5
0
20
40
60
80
100
130
V
A
I
V
D
DS
7 Typ. transfer characteristics
I = f ( V ); V 2 x I x R
8 Typ. forward transconductance
g = f(I ); T =25°C
D
GS
DS
D
DS(on)max
fs
D
j
parameter: t = 80 µs
parameter: g
p
fs
60
S
70
A
60
55
50
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
0
0
V
A
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0
10
20
30
40
55
I
V
GS
D
Page 5
2001-08-24
Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
9 Drain-source on-state resistance
= f (T )
10 Gate threshold voltage
V = f (T )
GS(th)
parameter: V = V , I = 2 mA
GS DS D
R
DS(on)
j
j
parameter : I = 50 A, V = 4.5 V
D
GS
SPP70N10L
110
3
V
m
90
80
70
60
50
40
30
20
10
0
2.4
2.2
2
1.8
1.6
1.4
1.2
1
max
typ
98%
0.8
0.6
0.4
0.2
0
typ
min
°C
°C
-60
-20
20
60
100
140
200
-60
-20
20
60
100
140
200
T
T
j
j
11 Typ. capacitances
C = f (V )
12 Forward character. of reverse diode
I = f (V )
DS
F
SD
parameter: V =0V, f=1 MHz
parameter: T , tp = 80 µs
GS
10 4
10 3
SPP70N10L
A
pF
C
iss
10 2
10 3
C
C
oss
rss
10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 2
10 0
V
0
5
10
15
20
25
30
40
0
0.4
0.8
1.2
1.6
2
2.4
3
V
V
V
DS
SD
Page 6
2001-08-24
Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
13 Typ. avalanche energy
= f (T )
14 Typ. gate charge
= f (Q
E
V
)
Gate
AS
j
GS
par.: I = 70 A , V = 25 V, R = 25
parameter: I = 70 A pulsed
D
DD
GS
D
SPP70N10L
16
700
mJ
V
600
550
500
450
400
350
300
250
200
150
100
50
12
10
V
0,2
DS max
0,8 VDS max
8
6
4
2
0
0
25
45
65
85 105 125 145
185
0
40
80
120
160
200
280
°C
T
nC
Q
Gate
j
15 Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
SPP70N10L
120
V
114
112
110
108
106
104
102
100
98
96
94
92
90
-60
-20
20
60
100
140
200
°C
T
j
Page 7
2001-08-24
Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPP70N10L, BSPB70N10L and BSPI70N10L, for
simplicity the device is referred to by the term SPP70N10L, SPB70N10L and SPI70N10L
throughout this documentation
Page 8
2001-08-24
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