SPBX1N60S5 [INFINEON]
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3;
| 型号： | SPBX1N60S5 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPPX1N60S5
SPBX1N60S5
Target data sheet
Cool MOS Power Transistor
• Worldwide best R
• N-Channel
in TO 220
DS(on)
• Enhancement mode
• Ultra low gate charge
• Avalanche rated
• dv/dt rated
1
2
3
• 150°C operating temperature
G
D
S
Type
V
I
R
DS(on)
Marking
Package
Ordering Code
DS
D
SPPX1N60S5
SPBX1N60S5
600 V 20.7 A 190 mΩ
X1N60S5
P-TO220-3-1
P-TO263-3-2
-
-
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
Drain source voltage
Continuous drain current
V
600
V
A
DSS
I
D
T = 25 °C
20.7
13.1
42
C
T = 100 °C
C
Pulsed drain current
I
D puls
T = 25 °C
C
Avalanche energy, single pulse
E
AS
690
mJ
I = 20.7 A, V = 50 V, R = 25 Ω
GS
D
DD
Avalanche current (periodic, limited byT
Avalanche energy (10 kHz, limited byT
)
I
AR
tbd
tbd
6
A
jmax
)
E
AR
mJ
jmax
Reverse diode dv/dt
I = 20.7 A, V <V , di/dt = 100 A/µs,
DSS
dv/dt
KV/µs
S
DS
T
= 150 °C
jmax
Gate source voltage
V
±20
V
GS
Power dissipation, T = 25 °C
P
208
W
°C
C
tot
Operating temperature
T
j
-55 ...+150
-55 ... +150
55/150/56
Storage temperature
T
stg
IEC climatic category; DIN IEC 68-1
Semiconductor Group
1
03 / 1998
SPPX1N60S5
SPBX1N60S5
Target data sheet
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T = 25 °C, unless otherwise specified
j
min.
typ.
max.
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient
(Leaded and through-hole packages)
SMD version, device on PCB:
@ min. footprint
R
-
-
-
0.6 K/W
-
thJC
R
62
thJA
R
thJA
-
-
tbd
35
-
-
2
1)
@ 6 cm cooling area
Static Characteristics
600
-
-
V
Drain- source breakdown voltage
= 0 V, I = 0.25 mA
V
V
(BR)DSS
V
GS
D
Gate threshold voltage,V = V
GS
DS
GS(th)
I = 1 mA, T = 25 °C
3.5
tbd
4.5
-
5.5
-
D
j
I = 1 mA, T = 150 °C
D
j
Zero gate voltage drain current,V =V
I
µA
DS DSS
DSS
V
V
V
= 0 V, T = -40 °C
-
-
-
-
0.5
-
0.1
1
GS
GS
GS
j
= 0 V, T = 25 °C
j
= 0 V, T = 150 °C
tbd
j
Gate-source leakage current
= 20 V, V = 0 V
I
-
10
100 nA
GSS
V
GS
DS
Drain-Source on-state resistance
V = 10 V, I = 13.1 A
R
-
tbd
190 mΩ
DS(on)
GS
D
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Semiconductor Group
2
03 / 1998
SPPX1N60S5
SPBX1N60S5
Target data sheet
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T = 25 °C, unless otherwise specified
j
min.
typ.
max.
Characteristics
Transconductance
g
-
-
-
-
-
-
tbd
-
S
fs
V
≥ 2 I
R
, I = 13.1 A
DS
* D * DS(on)max D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
3000
1900
100
tbd
tbd pF
iss
V
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
C
tbd
oss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
C
tbd
rss
V
GS
DS
Turn-on delay time
t
tbd ns
d(on)
V
= 350 V, V
= 10 V, I = 20.7 A
D
DD
GS
GS
Rise time
= 350 V, V
t
tbd
-
r
V
= 10 V, I = 20.7 A,
D
DD
R = 3.6 Ω
G
Turn-off delay time
t
-
-
tbd
tbd
tbd
-
d(off)
V
= 350 V, V
= 10 V, I = 20.7 A,
D
DD
GS
R = 3.6 Ω
G
Fall time
t
f
V
= 350 V, V
= 10 V, I = 20.7 A,
D
DD
GS
R = 3.6 Ω
G
Semiconductor Group
3
03 / 1998
SPPX1N60S5
SPBX1N60S5
Target data sheet
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T = 25 °C, unless otherwise specified
j
min.
typ.
max.
Gate Charge Characteristics
Gate-source charge
Q
-
-
-
tbd
-
-
nC
gs
I = 20.7 A, V = 400 V
D
DD
Gate-drain charge
I = 20.7 A, V = 400 V
Q
tbd
gd
D
DD
Total gate charge
= 400 V, I = 20.7 A, V = 0 to 10 V
GS
Q
100
tbd
G
V
DD
D
Reverse Diode
Continuous source current
I
S
-
-
-
-
-
-
20.7
42
1.2
-
A
T = 25 °C
C
Pulsed source current
I
SM
-
T = 25 °C
C
Inverse diode forward voltage
V
tbd
tbd
4.5
V
SD
V
GS
= 0 V, I = 20.7 A
F
Reverse recovery time
V = 100 V, I =I , di /dt = 100 A/µs
t
ns
µC
rr
R
F
S
F
Reverse recovery charge
V = 100 V, I =l , di /dt = 100 A/µs
Q
-
rr
R
F S
F
Semiconductor Group
4
03 / 1998
SPPX1N60S5
SPBX1N60S5
Target data sheet
Edition 7.97
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstraße 73,
81541 München
© Siemens AG 1997
All Rights Reserved.
Attention please!
As far as patents or other rights of third parties are concerned, liability is only assumed for components,
not for applications, processes and circuits implemented within components or assemblies.
The information describes a type of component and shall not be considered as warranted characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany
or the Siemens Companies and Representatives worldwide (see address list).
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Siemens Office, Semiconductor Group.
Siemens AG is an approved CECC manufacturer.
Packing
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For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to
invoice you for any costs incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose!
1
Critical components of the Semiconductor Group of Siemens AG, may only be used in life-support devices or
2
systems with the express written approval of the Semiconductor Group of Siemens AG.
1)A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of
that device or system.
2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
Errata sheet to target data sheetSPPX1N60S5:
Samples with datecode≤ 830:
• Reduced avalanche rating
• Reverse diodedv/dt ≤ 4 KV/µs
• Gate threshold voltageV
: upper limit 6V
GS(th)
Semiconductor Group
5
03 / 1998
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