SPD02N80C3BTMA1 [INFINEON]
Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 2/3 PIN;
| 型号： | SPD02N80C3BTMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 2/3 PIN |
| 文件： | 总10页 (文件大小：375K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD02N80C3
CoolMOSTM Power Transistor
Features
Product Summary
V DS
800
2.7
12
V
• New revolutionary high voltage technology
• Extreme dv/dt rated
R DS(on)max @ Tj = 25°C
Q g,typ
W
nC
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda)
• Ultra low gate charge
PG-TO252-3
• Ultra low effective capacitances
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
xsx
Type
Package
Marking
SPD02N80C3
PG-TO252-3
02N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
2
1.2
Continuous drain current
A
T C=100 °C
Pulsed drain current2)
6
I D,pulse
E AS
T C=25 °C
I D=1 A, V DD=50 V
I D=2 A, V DD=50 V
Avalanche energy, single pulse
90
mJ
2),3)
2),3)
E AR
0.05
2
Avalanche energy, repetitive t AR
I AR
A
Avalanche current, repetitive t AR
MOSFET dv /dt ruggedness
Gate source voltage
V DS=0…640 V
static
50
dv /dt
V GS
V/ns
V
±20
±30
42
AC (f >1 Hz)
T C=25 °C
P tot
Power dissipation
W
T j, T stg
-55 ... 150
Operating and storage temperature
°C
a) non-Halogen free (OPN: SPD02N80C3BT); Halogen free (OPN: SPD02N80C3AT)
Rev. 2.92page 1
203-07-31
SPD02N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I S
2
6
4
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
A
T C=25 °C
I S,pulse
dv /dt
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
3
K/W
SMD version, device
on PCB, minimal
footprint
R thJA
62
Thermal resistance, junction -
ambient
SMD version, device
on PCB, 6 cm2 cooling
area5)
-
-
35
-
-
Soldering temperature, reflow
soldering
T sold
reflow MSL1
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=250 µA
V (BR)DS V GS=0 V, I D=2 A
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
800
-
-
870
3
-
-
V
V GS(th) V DS=V GS, I D=0.12 mA
2.1
3.9
V DS=800 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
5
-
µA
V DS=800 V, V GS=0 V,
T j=150 °C
-
-
-
25
-
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
100 nA
V GS=10 V, I D=1.2 A,
T j=25 °C
R DS(on)
Drain-source on-state resistance
2.4
2.7
W
V GS=10 V, I D=1.2 A,
T j=150 °C
-
-
6.5
1.2
-
-
R G
Gate resistance
f =1 MHz, open drain
W
Rev. 2.92
page 2
203-07-31
SPD02N80C3
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
-
-
290
13
-
-
pF
V GS=0 V, V DS=100 V,
f =1 MHz
C oss
Effective output capacitance, energy
related6)
C o(er)
-
-
11
26
-
-
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related7)
C o(tr)
t d(on)
t r
t d(off)
t f
Turn-on delay time
Rise time
-
-
-
-
25
15
72
18
-
-
-
-
ns
V DD=400 V,
V GS=0/10 V, I D=2 A,
R G=47 ? , T j=25 °C
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
1.5
6
-
-
nC
Q gd
V DD=640 V, I D=2 A,
V GS=0 to 10 V
Q g
12
5.5
16
-
V plateau
Gate plateau voltage
V
V
Reverse Diode
V GS=0 V, I F=I S=2 A,
T j=25 °C
V SD
Diode forward voltage
-
1
1.2
t rr
Reverse recovery time
-
-
-
520
2
-
-
-
ns
µC
A
V R=400 V, I F=I S=2 A,
di F/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
1) J-STD20 and JESD22
6
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
I
=ID, di/dt=400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
SD
5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection.
PCB is vertical without blown air
6)
C
C
is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
o(er)
7)
o(tr)
2013-07-31
Rev. 2.92
page 3
SPD02N80C3
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P tot=f(T C)
101
50
40
30
20
10
0
1 µs
limited by on-state
resistance
10 µs
100 µs
1 ms
100
10-1
10-2
10 ms
DC
1
10
100
1000
0
25
50
75
100
125
150
T C [°C]
V DS [V]
3 Max. transient thermal impedance
ZthJC=f(tP)
4 Typ. output characteristics
I D=f(V DS); T j=25 °C; t p=10 µs
parameter: V GS
parameter: D=t p/T
101
7
6
5
20 V
10 V
0.5
4
3
2
1
0
100
0.2
6.5 V
6 V
0.1
0.05
0.02
5.5 V
5 V
0.01
single pulse
10-1
10-5
10-4
10-3
10-2
10-1
0
5
10
15
20
25
t p [s]
V DS [V]
Rev. 2.92
page 4
203-07-31
SPD02N80C3
5 Typ. output characteristics
I D=f(V DS); T j=150 °C; t p=10 µs
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
3
2.5
2
9
8.6
8.2
7.8
7.4
7
20 V
6 V
10 V
20 V
5.5 V
10 V
6 V
1.5
5 V
6.6
1
5.5 V
5 V
6.2
4.5 V
4 V
4.5 V
5.8
5.4
5
0.5
0
0
5
10
15
20
25
0
1
2
3
4
5
6
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=1.2 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 µs
parameter: T j
5.6
4.8
7
25 °C
6
5
4
3
2
1
0
98 %
4
3.2
2.4
150 °C
typ
1.6
0.8
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
T j [°C]
V GS [V]
Rev. 2.92
page 5
2013-07-31
SPD02N80C3
9 Typ. gate charge
V GS=f(Q gate); I D=2 A pulsed
parameter: V DD
10 Forward characteristics of reverse diode
I F=f(V SD); t p=10 µs
parameter: T j
102
101
100
10-1
10
160 V
150 °C
8
640 V
25°C (98°C)
6
150°C (98%)
25 °C
4
2
0
0
0.5
1
1.5
2
0
2
4
6
8
10
12
14
Q gate [nC]
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=1 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
80
960
920
880
840
800
760
720
680
60
40
20
0
25
50
75
100
T j [°C]
125
150
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.92
page 6
203-07-31
SPD02N80C3
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
103
2.5
Ciss
2
1.5
1
102
Coss
101
Crss
0.5
100
0
0
0
100
200
300
400
500
100 200 300 400 500 600 700 800
V DS [V]
V DS [V]
Rev. 2.92
page 7
203-07-31
SPD02N80C3
Definition of diode switching characteristics
Rev. 2.92
page 8
203-07-31
SPD02N80C3
PG-TO252-3: Outline
Rev. 2.92
page 9
203-07-31
SPD02N80C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.92
page 10
203-07-31
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