SPD03N50C3 [INFINEON]
Cool MOS™ Power Transistor; 酷MOS ™功率晶体管
| 型号： | SPD03N50C3 |
| 厂家： | 
Infineon |
| 描述： | Cool MOS™ Power Transistor |
| 文件： | 总11页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD03N50C3
Final data
Cool MOS™ Power Transistor
V
@ T
560
1.4
3.2
V
Ω
A
DS
jmax
Feature
R
DS(on)
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
I
D
P-TO252-3-1
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
Package
Ordering Code
Marking
SPD03N50C3
P-TO252-3-1 Q67040-S4571
03N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T = 25 °C
3.2
2
C
T = 100 °C
C
9.6
100
Pulsed drain current, t limited by T
Avalanche energy, single pulse
I
E
p
jmax
D puls
mJ
AS
I = 2.4 A, V = 50 V
Avalanche energy, repetitive t limited by T
D
DD
jmax
E
0.2
3.2
AR
AR
I = 3.2 A, V = 50 V
D
DD
A
V
Avalanche current, repetitive t limited by T
Gate source voltage
I
AR
jmax AR
V
±20
±30
38
GS
V
P
Gate source voltage AC (f >1Hz)
GS
tot
W
°C
Power dissipation, T = 25°C
C
Operating and storage temperature
T , T
-55... +150
Page 1
2003-10-07
SPD03N50C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 400 V, I = 3.2 A, T = 125 °C
DS
D j
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
3.3 K/W
Thermal resistance, junction - case
thJC
R
-
-
75
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJA
R
thJA
-
-
-
-
75
50
2
2)
@ 6 cm cooling area
Soldering temperature,
T
-
-
260 °C
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
500
-
typ. max.
V
V
=0V, I =0.25mA
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =3.2A
GS
600
-
V
D
(BR)DS
I =135µΑ, V =V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=500V, V =0V,
DS GS
µA
DSS
T =25°C,
-
-
-
0.1
-
-
1
100
100 nA
j
T =150°C
j
V
V
=20V, V =0V
Gate-source leakage current
I
GS
DS
GSS
=10V, I =2A,
GS
Drain-source on-state resistance R
Ω
D
DS(on)
T =25°C
-
-
-
1.25
3.4
15
1.4
-
-
j
T =150°C
j
R
f=1MHz, open Drain
Gate input resistance
G
Page 2
2003-10-07
SPD03N50C3
Final data
Electrical Characteristics , at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
S
min.
Transconductance
g
V
≥2*I *R
DS(on)max
,
-
3.5
-
fs
DS
D
I =2A
D
Input capacitance
C
V
=0V, V =25V,
GS DS
-
-
-
-
350
150
5
-
-
-
-
pF
iss
f=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
3)
V
V
=0V,
GS
Effective output capacitance,
energy related
Effective output capacitance,
time related
C
18
pF
ns
o(er)
=0V to 400V
DS
4)
C
-
31
-
o(tr)
Turn-on delay time
t
V
=350V, V =0/10V,
-
-
-
-
10
5
70
15
-
-
-
-
d(on)
DD
GS
I =3.2A, R =20Ω
Rise time
t
D
G
r
Turn-off delay time
Fall time
t
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=400V, I =3.2A
-
-
-
2
8
15
-
-
-
nC
V
gs
DD
D
gd
V
V
=400V, I =3.2A,
Gate charge total
DD
D
g
=0 to 10V
GS
V
=400V, I =3.2A
-
5
-
Gate plateau voltage
V(plateau)
DD
D
1
2
Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
Co(er) is a fixed capacitance that gives the same stored energy asCoss while VDS is rising from 0 to 80% VDSS
.
4
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Page 3
2003-10-07
SPD03N50C3
Final data
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
C
-
-
3.2
A
Inverse diode continuous
forward current
I
S
Inverse diode direct current,
I
-
-
9.6
SM
pulsed
V
=0V, I =I
F S
-
-
-
-
-
1
1.2
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =400V, I =I ,
240
1.6
12
-
-
-
-
ns
µC
A
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
F
rr
I
rrm
550
A/µs
Peak rate of fall of reverse
recovery current
di /dt
rr
Typical Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal resistance
Thermal capacitance
0.054
0.103
0.178
0.757
0.682
0.202
K/W
0.00005232
0.0002034
0.0002963
0.0009103
0.002084
0.024
R
R
R
R
Rth5
R
C
C
C
C
C
C
Ws/K
th1
th2
th3
th4
th1
th2
th3
th4
th5
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Page 4
2003-10-07
SPD03N50C3
Final data
1 Power dissipation
= f (T )
2 Safe operating area
I = f ( V
P
)
DS
tot
C
D
parameter : D = 0 , T =25°C
C
10 1
SPD03N50C3
40
W
A
32
28
24
20
16
12
8
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10 -1
tp = 1 ms
DC
4
10 -2
0
0
20
40
60
80 100 120
160
10 0
10 1
10 2
10 3
DS
°C
T
V
V
C
3 Transient thermal impedance
= f (t )
4 Typ. output characteristic
I = f (V ); T =25°C
Z
thJC
p
D
DS
j
parameter: D = t /T
parameter: t = 10 µs, V
p
p
GS
10 1
11
A
K/W
20V
9
7V
10 0
10 -1
10 -2
10 -3
6.5V
8
6V
5.5V
7
5V
4.5V
6
4V
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
5
4
3
2
1
0
single pulse
10 -7
10 -6
10 -5
10 -4
10 -3
10 -1
0
5
10
15
25
s
V
t
V
DS
p
Page 5
2003-10-07
SPD03N50C3
Final data
5 Typ. output characteristic
I = f (V ); T =150°C
6 Typ. drain-source on resistance
=f(I )
R
D
DS
j
DS(on)
D
parameter: t = 10 µs, V
parameter: T =150°C, V
p
GS
j
GS
10
6
A
Ω
4V
20V
4.5V
5V
7V
5
4.5
4
6V
8
7
6
5
4
3
2
1
5.5V
6V
5.5V
5V
6.5V
8V
4.5V
4V
3.5
3
20V
3.5V
2.5
2
1.5
1
0.5
0
0
5
10
15
25
0
1
2
3
4
5
6
8
V
A
I
V
D
DS
7 Drain-source on-state resistance
= f (T )
8 Typ. transfer characteristics
R
I = f ( V ); V ≥ 2 x I x R
DS(on)
j
D GS DS D DS(on)max
parameter : I = 2 A, V = 10 V
parameter: t = 10 µs
D
GS
p
SPD03N50C3
8
11
A
Ω
9
8
7
6
5
4
3
2
1
0
25°C
6
5
4
3
2
1
0
150°C
98%
typ
°C
-60
-20
20
60
100
180
0
2
4
6
10
V
V
T
GS
j
Page 6
2003-10-07
SPD03N50C3
Final data
9 Typ. gate charge
= f (Q
10 Forward characteristics of body diode
I = f (V )
V
)
GS
Gate
F
SD
parameter: I = 3.2 A pulsed
parameter: T , tp = 10 µs
D
10 1
SPD03N50C3
SPD03N50C3
16
V
A
12
10 0
0.2 VDS max
10
0.8 VDS max
8
6
4
2
0
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -2
nC
0
4
8
12
16
20
24
30
0
0.4
0.8
1.2
1.6
2
2.4
3
V
Q
V
Gate
SD
11 Avalanche SOA
= f (t )
12 Avalanche energy
E = f (T )
AS
I
AR
AR
j
par.: T ≤ 150 °C
par.: I = 2.4 A, V = 50 V
j
D
DD
3.5
120
A
mJ
T
=25°C
j(START)
2.5
2
80
60
40
20
0
1.5
T
=125°C
j(START)
1
0.5
0
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
20
40
60
80
100
120
160
°C
µs
AR
t
T
j
Page 7
2003-10-07
SPD03N50C3
Final data
13 Drain-source breakdown voltage
= f (T )
14 Avalanche power losses
P = f (f )
AR
V
(BR)DSS
j
parameter: E =0.2mJ
AR
SPD03N50C3
200
600
V
W
160
140
120
100
80
570
560
550
540
530
520
510
500
490
480
470
460
450
60
40
20
0
10 4
-60
-20
20
60
100
180
10 5
10 6
°C
Hz
T
f
j
15 Typ. capacitances
C = f (V )
16 Typ. C
stored energy
oss
E
=f(V )
DS
oss
DS
parameter: V =0V, f=1 MHz
GS
10 4
1.75
pF
µJ
10 3
Ciss
1.25
1
10 2
Coss
0.75
0.5
0.25
0
10 1
Crss
10 0
10 -1
0
100
200
300
500
DS
0
100
200
300
500
DS
V
V
V
V
Page 8
2003-10-07
SPD03N50C3
Final data
Definition of diodes switching characteristics
Page 9
2003-10-07
SPD03N50C3
Final data
P-TO-252-3-1 (D-PAK)
Page 10
2003-10-07
SPD03N50C3
Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
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Page 11
2003-10-07
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