SPD07N60S5 [INFINEON]
Cool MOS⑩ Power Transistor; 酷MOS ™功率晶体管
| 型号： | SPD07N60S5 |
| 厂家： | 
Infineon |
| 描述： | Cool MOS⑩ Power Transistor |
| 文件： | 总11页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPU07N60S5
SPD07N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
V
600
0.6
7.3
V
Ω
A
DS
R
DS(on)
I
D
• Worldwide best R
in TO-251 and TO-252
DS(on)
P-TO252.
P-TO251.
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
2
3
3
1
2
1
• Ultra low effective capacitances
• Improved transconductance
Type
SPU07N60S5
SPD07N60S5
Package
P-TO251.
P-TO252.
Ordering Code
Q67040-S4196
Q67040-S4186
Marking
07N60S5
07N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T = 25 °C
7.3
4.6
C
T = 100 °C
C
14.6
230
Pulsed drain current, t limited by T
Avalanche energy, single pulse
I
E
p
jmax
D puls
mJ
AS
I = - A, V = 50 V
D
DD
jmax
E
0.5
7.3
Avalanche energy, repetitive t limited by T
AR
AR
I = 7.3 A, V = 50 V
D
DD
A
V
Avalanche current, repetitive t limited by T
I
AR
jmax AR
Gate source voltage
V
±20
30
83
GS
V
P
Gate source voltage AC (f >1Hz)
GS
tot
Power dissipation, T = 25°C
W
C
°C
Operating and storage temperature
T , T
-55... +150
Page 1
Rev. 2.1
2004-03-30
SPU07N60S5
SPD07N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
20
V/ns
V
= 480 V, I = 7.3 A, T = 125 °C
D j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
-
1.5 K/W
75
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJC
R
-
thJA
R
thJA
-
-
-
-
75
50
2
2)
@ 6 cm cooling area
Soldering temperature,
T
-
-
260 °C
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
600
-
typ. max.
V
V
=0V, I =0.25mA
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =7.3A
GS
700
-
V
D
(BR)DS
I =350µΑ, V =V
3.5
4.5
5.5
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=600V, V =0V,
µA
DS
GS
DSS
T =25°C,
-
-
-
0.5
-
-
1
100
100 nA
j
T =150°C
j
V
V
=20V, V =0V
Gate-source leakage current
I
GS
DS
GSS
=10V, I =4.6A,
GS
Drain-source on-state resistance R
Ω
D
DS(on)
T =25°C
-
-
-
0.54
1.46
19
0.6
-
-
j
T =150°C
j
R
f=1MHz, open Drain
Gate input resistance
G
Page 2
Rev. 2.1
2004-03-30
SPU07N60S5
SPD07N60S5
Electrical Characteristics , at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Characteristics
Transconductance
g
V
≥2*I *R
DS(on)max
,
-
4
-
S
fs
DS
D
I =4.6A
D
Input capacitance
C
V
=0V, V =25V,
-
-
-
-
970
370
10
-
-
-
-
pF
iss
GS
DS
f=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
3)
V
V
=0V,
GS
Effective output capacitance,
energy related
C
30
pF
ns
o(er)
=0V to 480V
DS
4)
Effective output capacitance,
time related
C
-
55
-
o(tr)
Turn-on delay time
t
V
=350V, V =0/10V,
-
-
-
-
120
40
170
20
-
-
d(on)
r
DD
GS
I =7.3A, R =12Ω
Rise time
t
t
t
D
G
Turn-off delay time
Fall time
255
30
d(off)
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=350V, I =7.3A
-
-
-
7.5
16.5
27
-
-
35
nC
V
gs
gd
g
DD
D
Gate to drain charge
V
V
=350V, I =7.3A,
Gate charge total
DD
D
=0 to 10V
GS
V
=350V, I =7.3A
-
8
-
Gate plateau voltage
V(plateau)
DD
D
1
2
Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
Co(er) is a fixed capacitance that gives the same stored energy asCoss while VDS is rising from 0 to 80% VDSS
.
4
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Page 3
Rev. 2.1
2004-03-30
SPU07N60S5
SPD07N60S5
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
-
-
7.3
14.6
1.2
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
-
-
SM
pulsed
V
=0V, I =I
F S
-
-
-
1
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =350V, I =I ,
750 1275 ns
4.9 µC
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Q
-
F
rr
Typical Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal resistance
Thermal capacitance
0.024
0.046
0.085
0.308
0.317
0.112
K/W
0.00012
0.0004578
0.000645
0.001867
0.004795
0.045
R
R
R
R
Rth5
R
C
Ws/K
th1
th2
th3
th4
th1
C
th2
C
th3
C
th4
C
th5
C
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Page 4
Rev. 2.1
2004-03-30
SPU07N60S5
SPD07N60S5
1 Power dissipation
= f (T )
2 Safe operating area
I = f ( V
P
)
DS
tot
C
D
parameter : D = 0 , T =25°C
C
10 2
SPU07N60S5
100
W
A
80
70
60
50
40
30
20
10
0
10 1
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 -1
10 -2
0
20
40
60
80 100 120
160
10 0
10 1
10 2
10 3
DS
°C
T
V
V
C
3 Typ. output characteristic
I = f (V ); T =25°C
4 Typ. output characteristic
I = f (V ); T =150°C
D
DS
j
D
DS
j
parameter: t = 10 µs, V
parameter: t = 10 µs, V
p
GS
p
GS
25
12
20V
20V
12V
A
9V
12V
10V
A
8.5V
8V
8
6
4
2
0
15
10
5
10V
9V
7.5V
7V
8V
7V
6.5V
6V
0
0
5
10
15
25
0
5
10
15
25
V
V
V
V
DS
DS
Page 5
Rev. 2.1
2004-03-30
SPU07N60S5
SPD07N60S5
5 Typ. drain-source on resistance
=f(I )
6 Drain-source on-state resistance
R = f (T )
DS(on)
R
DS(on)
D
j
parameter: T =150°C, V
parameter : I = 4.6 A, V = 10 V
j
GS
D
GS
SPU07N60S5
3
3.4
Ω
2.8
2.4
2
mΩ
2
1.5
1
1.6
1.2
0.8
0.4
0
20V
12V
10V
9V
8.5V
8V
98%
typ
7.5V
7V
6.5V
6V
°C
0
2
4
6
8
10
14
-60
-20
20
60
100
180
I
T
D
j
7 Typ. transfer characteristics
8 Typ. gate charge
= f (Q
I = f ( V ); V ≥ 2 x I x R
V
)
Gate
D
GS
DS
D
DS(on)max
GS
parameter: t = 10 µs
parameter: I = 7.3 A pulsed
p
D
SPU07N60S5
24
16
A
V
0.2 VDS max
20
18
0.8 VDS max
12
16
10
8
25 °C
14
150 °C
12
10
8
6
6
4
4
2
2
0
0
nC
0
4
8
12
20
GS
0
4
8
12 16 20 24 28 32
38
V
V
Q
Gate
Page 6
Rev. 2.1
2004-03-30
SPU07N60S5
SPD07N60S5
9 Forward characteristics of body diode
I = f (V )
10 Avalanche SOA
= f (t )
I
F
SD
AR
AR
parameter: T , tp = 10 µs
par.: T ≤ 150 °C
j
10 2
SPU07N60S5
8
A
A
6
5
4
3
2
1
0
10 1
Tj(START)=25°C
10 0
Tj(START)=125°C
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -1
0
0.4
0.8
1.2
1.6
2
2.4
3
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
V
V
µs
t
AR
SD
11 Avalanche energy
= f (T )
12 Drain-source breakdown voltage
= f (T )
E
V
(BR)DSS
AS
j
j
par.: I = - A, V = 50 V
D
DD
SPU07N60S5
260
mJ
720
V
220
200
180
160
140
120
100
80
680
660
640
620
600
580
560
540
60
40
20
0
20
40
60
80
100
120
160
-60
-20
20
60
100
180
°C
°C
T
T
j
j
Page 7
Rev. 2.1
2004-03-30
SPU07N60S5
SPD07N60S5
13 Avalanche power losses
= f (f )
14 Typ. capacitances
C = f (V )
P
AR
DS
parameter: E =0.5mJ
parameter: V =0V, f=1 MHz
AR
GS
10 4
300
pF
W
Ciss
10 3
200
150
100
50
10 2
Coss
10 1
Crss
10 0
0
10 4
10 5
10 6
0
100
200
300
400
600
DS
MHz
V
V
f
15 Typ. C
stored energy
oss
E
=f(V )
oss
DS
5.5
µJ
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
100
200
300
400
600
DS
V
V
Page 8
Rev. 2.1
2004-03-30
SPU07N60S5
SPD07N60S5
Definition of diodes switching characteristics
Page 9
Rev. 2.1
2004-03-30
SPU07N60S5
SPD07N60S5
P-TO-252-3-1 (D-PAK)
P-TO-251-3-1 (I-PAK)
+0.ꢀ5
6.5
-0.ꢀ0
+0.05
-0.ꢀ0
2.3
A
+0.08
-0.04
B
0.ꢀ
5.4
0.9
C
0.ꢀ5 max
per side
+0.08
0.ꢀ
0.5
3 x 0.75
2.28
-0.04
ꢀ.0
4.56
M
0.25
A B C
GPT09050
All metal surfaces tin plated, except area of cut.
Page 10
Rev. 2.1
2004-03-30
SPU07N60S5
SPD07N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 11
Rev. 2.1
2004-03-30
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