SPD08P06P G [INFINEON]
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.;
| 型号： | SPD08P06P G |
| 厂家： | 
Infineon |
| 描述： | Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. |
| 文件： | 总9页 (文件大小：599K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD08P06P G
SIPMOS® Power-Transistor
Product Summary
Features
V DS
-60
0.3
V
Ω
A
• P-Channel
R DS(on),max
I D
• Enhancement mode
-8.8
• Avalanche rated
• dv /dt rated
PG-TO252-3
• 175°C operating temperature
• Pb-free lead finishing; RoHS compliant
° Qualified according to AEC Q101
Type
Package
Tape and reel information
Marking Lead free
08P06P Yes
Packing
SPD08P06PG PG-TO252-3
1000 pcs / reel
Non dry
Value
Parameter
Symbol Conditions
Unit
steady state
I D
T A=25 °C
T A=100 °C
T A=25 °C
-8.83
Continuous drain current
A
-6.25
I D,pulse
E AS
-35.32
Pulsed drain current
I D=8.83 A, R GS=25 Ω
70
Avalanche energy, single pulse
mJ
Avalanche energy, periodic limited by
Tjmax
E AR
4.2
I D=8.83 A, V DS=48 V,
di /dt =-200 A/µs,
-6
Reverse diode dv /dt
dv /dt
kV/µs
T
j,max=175 °C
V GS
±20
42
Gate source voltage
V
P tot
T A=25 °C
Power dissipation
W
°C
T j, T stg
"-55 ... +175"
Operating and storage temperature
ESD class
260 °C
Soldering temperature
IEC climatic category; DIN IEC 68-1
55/175/56
Rev 1.92
page 1
2012-09-10
SPD08P06P G
Parameter
Symbol Conditions
Unit
Values
typ.
min.
max.
Thermal characteristics
Thermal resistance,
junction - case
R thJC
-
-
-
-
K/W
3.6
Thermal resistance,
junction - ambient,leaded
R thJA
R thJA
-
SMD version, device on PCB:
minimal footprint
-
-
-
-
75
K/W
6 cm2 cooling area1)
50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=-250 µA
DS=V GS, I D=-250 µA
Drain-source breakdown voltage
Gate threshold voltage
-60
-
-
V
-2.1
-3.0
-4
V
DS=-60 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-0.1
-1
µA
T j=25 °C
V
DS=-60 V, V GS=0 V,
-
-
-
-10
-10
230
-100
T j=150 °C
I GSS
V
V
GS=-20 V, V DS=0 V
GS=-6.2 V, I D=-10 A
Gate-source leakage current
-100 nA
R DS(on)
Drain-source on-state resistance
300
-
mΩ
|V DS|>2|I D|R DS(on)max
I D=-6.2 A
,
g fs
Transconductance
2.5
4.9
S
2
1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm ( one layer, 70µ, thick) copper area for drain connection.
PCB is vertical without blown air
.
Rev 1.92
page 2
2012-09-10
SPD08P06P G
Values
Unit
Parameter
Symbol Conditions
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
335
105
65
420 pF
135
95
V
GS=0 V, V DS=-25 V,
C oss
C rss
t d(on)
t r
f =1 MHz
16.0
46.0
48
24.0
69
V
DD=-30 V, V GS=-
10 V, I D=-6.2 A,
R G=6 Ω
t d(off)
t f
Turn-off delay time
Fall time
72
14
21
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
-1.9
-5
-2.6 nC
Q gd
-8
V
V
DD=-48 V, I D=-8.8 A,
GS=0 to -10 V
Q g
-10
-6
-13
V plateau
Gate plateau voltage
-
V
A
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
-8.80
-35.3
T A=25 °C
I S,pulse
V
GS=0 V, I F=-8.83 A,
V SD
t rr
Diode forward voltage
Reverse recovery time
Reverse recovery charge
-
-
-
-0.98
60
-1.55
90
V
T j=25 °C
ns
V R=30 V, I F=|I S|,
di F/dt =100 A/µs
Q rr
100
150 nC
Rev 1.92
page 3
2012-09-10
SPD08P06P G
1 Power dissipation
2 Drain current
P
tot=f(T A)
I D=f(T A); |V GS|≥10 V
9
8
7
6
5
4
3
2
1
0
40
30
20
10
0
0
0
40
80
A [°C]
120
160
40
80
120
160
T
A [°C]
T
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJA=f(t p)
Z
parameter: D =t p/T
102
101
10 µs
limited by on-state
resistance
100 µs
101
100
0.5
1 ms
10 ms
100
0.2
0.1
DC
0.05
0.02
0.01
10-1
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
102
10-1
10-2
10-1
100
101
102
-V DS [V]
t
p [s]
Rev 1.92
page 4
2012-09-10
SPD08P06P G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
1000
-20 V
900
800
18
-10 V
15
700
-7 V
-4 V
-4.5 V
600
12
9
-5 V
500
400
300
200
100
0
-5.5 V
-6 V
-6 V
-7 V
-5.5 V
-5V
6
-10 V
-20V
3
-4.5 V
-4 V
0
0
2
4
6
8
10
12
14
0
1
2
3
4
5
6
7
8
-V DS [V]
-ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
6
5
4
3
2
6
5
4
3
2
1
0
1
125 °C
25 °C
0
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
-ID [A]
-V GS [V]
Rev 1.92
page 5
2012-09-10
SPD08P06P G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=-6.2 A; V GS=-10 V
V
GS(th)=f(T j); V GS=V DS; I D=-250 µA
700
600
500
5
4.5
max.
4
3.5
98 %
typ.
3
400
2.5
2
300
min.
1.5
200
typ.
1
0.5
0
100
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
103
175 °C, typ
Ciss
101
100
25 °C, 98%
Coss
Crss
102
175 °C, 98%
10-1
10-2
25 °C, typ
101
0
5
10
15
20
25
0
0.5
1
1.5
2
2.5
3
-V DS [V]
-V SD [V]
Rev 1.92
page 6
2012-09-10
SPD08P06P G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=-8.8 A pulsed
V
I
parameter: T j(start)
parameter: V DD
101
16
14
12
10
8
25 °C
30 V
48 V
100 °C
12 V
125 °C
6
4
2
100
100
0
0
101
102
103
3
6
9
12
15
t
AV [µs]
Q
gate [nC]
15 Drain-source breakdown voltage
V
BR(DSS)=f(T j); I D=-250 µA
70
65
60
55
50
-60
-20
20
60
100
140
180
T j [°C]
Rev 1.92
page 7
2012-09-10
SPD08P06P G
Package outline: PG-TO252-3
Rev 1.92
page 8
2012-09-10
SPD08P06P G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
).
the nearest Infineon Technologies Office (www.infineon.com
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev 1.92
page 9
2012-09-10
相关型号：
SPD08P06PGBTMA1
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3 PIN
INFINEON
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