SPD15P10P G [INFINEON]
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.;
| 型号： | SPD15P10P G |
| 厂家： | 
Infineon |
| 描述： | Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. |
| 文件： | 总10页 (文件大小：731K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD15P10P G
SIPMOS® Small-Signal-Transistor
Product Summary
Features
V DS
-100
0.24
-15
V
Ω
A
• P-Channel
R DS(on),max
I D
• Enhancement mode
• Normal level
• Avalanche rated
PG-TO252-3
• Pb-free lead plating; RoHS compliant
° Qualified according to AEC Q101
Type
Package
Marking
15P10P
15P10P
Lead free Packing
SPP15P10P G
SPD15P10P G
PG-TO220-3
PG-TO252-3
Yes
Yes
Non dry
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
-15
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
Continuous drain current
A
-10.6
I D,pulse
E AS
-60
Pulsed drain current
230
I D=-15 A, R GS=25 Ω
Avalanche energy, single pulse
Gate source voltage
mJ
V
V GS
±20
P tot
T C=25 °C
128
Power dissipation
W
°C
T j, T stg
-55 ... 175
1C (1kV to 2kV)
260 °C
55/175/56
Operating and storage temperature
ESD Class
Soldering temperature
IEC climatic category; DIN IEC 68-1
Rev 1.8
page 1
2012-09-11
SPD15P10P G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
Thermal resistance,
R thJC
-
-
-
-
-
-
1.17 K/W
junction - soldering point
Thermal resistance,
junction - ambient
minimal footprint,
R thJA
75
45
steady state
6 cm2 cooling area1),
steady state
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=-1 mA
DS=V GS, I D=-
Drain-source breakdown voltage
Gate threshold voltage
-100
-4
-
-
V
-3
-2.1
1.54 mA
V
DS=-100 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-0.1
-1
µA
T j=25 °C
V
DS=-100 V, V GS=0 V,
-
-
-
-10
-10
160
-100
T j=150 °C
I GSS
V
V
GS=-20 V, V DS=0 V
Gate-source leakage current
-100 nA
GS=-10 V,
R DS(on)
Drain-source on-state resistance
240
-
mΩ
I D=-10.6 A
|V DS|>2|I D|R DS(on)max
I D=-10.6 A
,
g fs
Transconductance
4.7
9.3
S
2
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev 1.8
page 2
2012-09-11
SPD15P10P G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
961
237
100
9.5
23
1280 pF
315
V
GS=0 V, V DS=-25 V,
C oss
C rss
t d(on)
t r
f =1 MHz
150
15.9 ns
33
V
V
DD=-50 V,
GS=-10 V,
t d(off)
t f
Turn-off delay time
Fall time
33
43
I D=-15 A, R G=6 Ω
16
20
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
5.4
18
7.2
27
48
-
nC
Q gd
V
V
DD=-80 V, I D=-15 A,
GS=0 to -10 V
Q g
37
V plateau
Gate plateau voltage
5.9
V
A
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
-15
60
T C=25 °C
I S,pulse
V
GS=0 V, I F=-15 A,
V SD
t rr
Diode forward voltage
Reverse recovery time
Reverse recovery charge
-
-
-
-0.94
100
-1.35
V
T j=25 °C
150 ns
628 nC
V R=50 V, I F=|I S|,
di F/dt =100 A/µs
Q rr
419
2) See figure 16 for gate charge parameter definition
Rev 1.8
page 3
2012-09-11
SPD15P10P G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); |V GS|≥10 V
16
12
8
140
120
100
80
60
40
4
20
0
0
0
0
40
80
T C [°C]
120
160
40
80
C [°C]
120
160
T
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
102
101
1 µs
limited by on-state
resistance
100 µs
1 ms
101
100
0.5
10 ms
0.2
DC
0.1
0.05
100
10-1
0.02
0.01
single pulse
10-1
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
-V DS [V]
t p [s]
Rev 1.8
page 4
2012-09-11
SPD15P10P G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
40
500
-4 V
-4.5 V
35
-10 V
-8 V
30
25
20
15
10
5
400
300
200
100
-5 V
-7 V
-6 V
-6 V
-7 V
-5 V
-8 V
-10 V
-4.5 V
-4 V
0
0
2
4
6
8
10
0
10
20
30
-V DS [V]
-ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
10
20
15
10
5
25 °C
8
6
4
2
0
125 °C
0
1
3
5
7
0
5
10
15
20
25
30
-V GS [V]
-ID [A]
Rev 1.8
page 5
2012-09-11
SPD15P10P G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=-10.6 A; V GS=-10 V
V
GS(th)=f(T j); V GS=V DS; I D=-1.54 mA
500
5
min.
400
4
98 %
typ.
300
3
max.
200
2
typ.
100
1
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
102
25 °C, typ
175 °C, 98%
101
100
175 °C, typ
103
Ciss
25 °C, 98%
Coss
Crss
102
10-1
101
10-2
0
0
20
40
60
80
0.5
1
1.5
-V DS [V]
-V SD [V]
Rev 1.8
page 6
2012-09-11
SPD15P10P G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=-15 A pulsed
V
I
parameter: T j(start)
parameter: V DD
10
50 V
20 V
8
6
4
2
80 V
25 °C
101
100 °C
125 °C
100
10-1
100
0
0
101
102
103
10
20
30
40
t
AV [µs]
- Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=-1mA
120
115
110
105
100
95
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
90
-60
-20
20
60
100
140
180
T j [°C]
Rev 1.
8
page 7
2012-0
9-11
SPD15P10P G
Package Outline: PG-TO-252-3
Rev 1.8
page 8
2012-09-11
SPD15P10P G
PG-TO220-3: Outline
Rev 1.8
page 9
2012-09-11
SPD15P10P G
Rev 1.8
page 10
2012-09-11
相关型号：
SPD15P10PL G
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