首页 |元器件品牌

SPDX6N60S5 [INFINEON]

Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
SPDX6N60S5
型号： SPDX6N60S5
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

脉冲 晶体管
文件： 总5页 (文件大小：84K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SPUX6N60S5  
SPDX6N60S5  
Target data sheet  
Cool MOS Power Transistor  
· N-Channel  
· Enhancement mode  
· Ultra low gate charge  
· Avalanche rated  
· dv/dt rated  
1
2
3
· 150°C operating temperature  
G
D
S
Type  
V
I
R
Marking  
950 mW X6N60S5  
Package  
Ordering Code  
DS  
D
DS(on)  
SPUX6N60S5 600 V 4.5 A  
SPDX6N60S5  
P-TO251-3-1  
P-TO252  
-
-
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
V
Drain source voltage  
Continuous drain current  
V
600  
DSS  
A
I
D
T = 25 °C  
4.5  
2.8  
C
T = 100 °C  
C
Pulsed drain current  
I
9
D puls  
T = 25 °C  
C
Avalanche energy, single pulse  
E
140  
mJ  
AS  
I = 4.5 A, V = 50 V, R = 25 W  
D
DD  
GS  
tbd  
tbd  
6
A
Avalanche current (periodic, limited by T  
)
I
jmax  
AR  
Avalanche energy (10 kHz, limited by T  
Reverse diode dv/dt  
)
E
mJ  
jmax  
AR  
KV/µs  
dv/dt  
I = 4.5 A, V <V  
, di/dt = 100 A/µs,  
S
DS DSS  
T
= 150 °C  
jmax  
Gate source voltage  
V
P
±20  
50  
V
GS  
tot  
j
Power dissipation, T = 25 °C  
W
°C  
C
Operating temperature  
T
T
-55 ...+150  
Storage temperature  
-55 ... +150  
55/150/56  
stg  
IEC climatic category; DIN IEC 68-1  
Semiconductor Group  
1
21/Oct/1998  
SPUX6N60S5  
SPDX6N60S5  
Target data sheet  
Electrical Characteristics  
Parameter  
Symbol  
Values  
Unit  
at T = 25 °C, unless otherwise specified  
min.  
typ.  
max.  
j
Thermal Characteristics  
Thermal resistance, junction - case  
Thermal resistance, junction - ambient  
(Leaded and through-hole packages)  
SMD version, device on PCB:  
@ min. footprint  
R
-
-
-
2.5 K/W  
-
thJC  
R
100  
thJA  
R
thJA  
-
-
tbd  
tbd  
-
-
2
1)  
@ 6 cm cooling area  
Static Characteristics  
600  
-
-
V
Drain- source breakdown voltage  
= 0 V, I = 0.25 mA  
V
V
(BR)DSS  
V
GS  
D
Gate threshold voltage, V = V  
GS  
DS  
GS(th)  
I = 200 µA, T = 25 °C  
3.5  
tbd  
4.5  
-
5.5  
-
D
j
I = 200 µA, T = 150 °C  
D
j
Zero gate voltage drain current, V =V  
I
µA  
DS DSS  
DSS  
V
V
V
= 0 V, T = -40 °C  
-
-
-
-
0.5  
-
0.1  
1
GS  
GS  
GS  
j
= 0 V, T = 25 °C  
j
= 0 V, T = 150 °C  
tbd  
j
Gate-source leakage current  
= 20 V, V = 0 V  
I
-
10  
100 nA  
GSS  
V
GS  
DS  
Drain-Source on-state resistance  
R
-
tbd  
950 mW  
DS(on)  
V
= 10 V, I = 2.8 A  
D
GS  
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain  
connection. PCB is vertical without blown air.  
Semiconductor Group  
2
21/Oct/1998  
SPUX6N60S5  
SPDX6N60S5  
Target data sheet  
Electrical Characteristics  
Parameter  
Symbol  
Values  
Unit  
at T = 25 °C, unless otherwise specified  
min.  
typ.  
tbd  
580  
375  
20  
max.  
-
j
Characteristics  
-
-
-
-
-
S
Transconductance  
g
fs  
V
³ 2 I  
R
, I = 2.8 A  
DS  
* D * DS(on)max D  
Input capacitance  
= 0 V, V = 25 V, f = 1 MHz  
C
C
C
tbd  
tbd  
tbd  
tbd  
pF  
iss  
oss  
V
GS  
DS  
Output capacitance  
= 0 V, V = 25 V, f = 1 MHz  
V
GS  
DS  
Reverse transfer capacitance  
= 0 V, V = 25 V, f = 1 MHz  
rss  
V
GS  
DS  
Turn-on delay time  
= 350 V, V = 10 V, I = 4.5 A,  
t
t
t
t
tbd  
ns  
d(on)  
V
DD  
GS  
D
R = 18 W  
G
Rise time  
-
-
-
tbd  
tbd  
tbd  
-
tbd  
-
r
V
= 350 V, V = 10 V, I = 4.5 A,  
GS D  
DD  
R = 18 W  
G
Turn-off delay time  
= 350 V, V = 10 V, I = 4.5 A,  
d(off)  
V
DD  
GS  
D
R = 18 W  
G
Fall time  
f
V
= 350 V, V = 10 V, I = 4.5 A,  
GS D  
DD  
R = 18 W  
G
Semiconductor Group  
3
21/Oct/1998  
SPUX6N60S5  
SPDX6N60S5  
Target data sheet  
Electrical Characteristics  
Parameter  
Symbol  
Values  
Unit  
at T = 25 °C, unless otherwise specified  
min.  
typ.  
tbd  
tbd  
19  
max.  
j
Gate Charge Characteristics  
Gate-source charge  
Q
-
-
-
-
-
nC  
gs  
I = 4.5 A, V = 400 V  
D
DD  
Gate-drain charge  
I = 4.5 A, V = 400 V  
Q
gd  
D
DD  
Total gate charge  
= 400 V, I = 4.5 A, V = 0 to 10 V  
Q
G
tbd  
V
DD  
D
GS  
Reverse Diode  
Continuous source current  
I
-
-
-
-
-
-
4.5  
9
A
S
T = 25 °C  
C
Pulsed source current  
I
-
SM  
T = 25 °C  
C
Inverse diode forward voltage  
= 0 V, I = 4.5 A  
V
t
tbd  
tbd  
tbd  
1.2  
-
V
SD  
V
GS  
F
Reverse recovery time  
V = 100 V, I =I , di /dt = 100 A/µs  
ns  
µC  
rr  
R
F
S
F
Reverse recovery charge  
V = 100 V, I =l , di /dt = 100 A/µs  
Q
-
rr  
R
F S  
F
Semiconductor Group  
4
21/Oct/1998  
SPUX6N60S5  
SPDX6N60S5  
Target data sheet  
Edition 7.97  
Published by Siemens AG,  
Bereich Halbleiter Vetrieb,  
Werbung, Balanstraße 73,  
81541 München  
© Siemens AG 1997  
All Rights Reserved.  
Attention please!  
As far as patents or other rights of third parties are concerned, liability is only assumed for components,  
not for applications, processes and circuits implemented within components or assemblies.  
The information describes a type of component and shall not be considered as warranted characteristics.  
Terms of delivery and rights to change design reserved.  
For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany  
or the Siemens Companies and Representatives worldwide (see address list).  
Due to technical requirements components may contain dangerous substances. For information on the types  
in question please contact your nearest Siemens Office, Semiconductor Group.  
Siemens AG is an approved CECC manufacturer.  
Packing  
Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales  
office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport.  
For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to  
invoice you for any costs incurred.  
Components used in life-support devices or systems must be expressly authorized for such purpose!  
1
Critical components of the Semiconductor Group of Siemens AG, may only be used in life-support devices or  
2
systems with the express written approval of the Semiconductor Group of Siemens AG.  
1)A critical component is a component used in a life-support device or system whose failure can reasonably be  
expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of  
that device or system.  
2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or  
maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the  
Semiconductor Group  
5
21/Oct/1998  

相关型号：

SPDX7N60S5

 Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
INFINEON

SPDXXD28

 DC Solid State Power Controller Module
SENSITRON

SPE-1001-25

 SURFACE MOUNT 2-WAY SPLITTER
PDI

SPE/LC503PBG1-30Q-A3

 SPECIFICATION FOR COTCO LED LAMP
CREE

SPE/LC503PBL1-15Q-A3

 SPECIFICATION FOR COTCO LED LAMP
ETC

SPE0504

 4-Line ESD Protection Array
SYNC-POWER

SPE0504S26RG

 4-Line ESD Protection Array
SYNC-POWER

SPE0504_10

 4-Line ESD Protection Array
SYNC-POWER

SPE0505

 5-Line ESD Protection Array
SYNC-POWER

SPE0505S26RG

 5-Line ESD Protection Array
SYNC-POWER

SPE0505_10

 5-Line ESD Protection Array
SYNC-POWER

SPE0506

 5-Line ESD Protection Array
SYNC-POWER
©2020 ICPDF网 联系我们和版权申明