SPI07N65C3HKSA1 [INFINEON]
Power Field-Effect Transistor, 7.3A I(D), 650V, 0.0006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, IPAK-3;
| 型号： | SPI07N65C3HKSA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 7.3A I(D), 650V, 0.0006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, IPAK-3 局域网 脉冲 晶体管 |
| 文件： | 总15页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPP07N65C3, SPI07N65C3
SPA07N65C3
CoolMOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V
650
0.6
7.3
V
Ω
A
DS
R
DS(on)
I
D
PG-TO220-3
PG-TO262-3-1 PG-TO220
• Periodic avalanche rated
• Extreme dv/dt rated
2
3
• High peak current capability
• Improved transconductance
2
3
2
1
1
P-TO220-3-31
P-TO220-3-1
• PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute)
Type
Package
Marking
SPP07N65C3
PG-TO220
07N65C3
07N65C3
07N65C3
SPI07N65C3
SPA07N65C3
PG-TO262-3
PG-TO220-3
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP_I
SPA
Continuous drain current
I
A
D
1)
T = 25 °C
7.3
4.6
7.3
C
1)
T = 100 °C
4.6
C
Pulsed drain current,
t
limited by
T
I
D puls
21.9
230
21.9
230
A
p
jmax
Avalanche energy, single pulse
E
mJ
AS
I =1.5A, V =50V
DD
D
2)
jmax
E
Avalanche energy, repetitive t limited by
T
0.5
0.5
AR
AR
I =2.5A, V =50V
DD
D
Avalanche current, repetitive t limited by
Gate source voltage
T
I
AR
2.5
20
30
83
2.5
20
30
32
A
V
AR
jmax
V
V
P
GS
GS
tot
Gate source voltage AC (f >1Hz)
Power dissipation, T = 25°C
W
C
Operating and storage temperature
T
,
T
stg
-55...+150
°C
j
Page 1
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 480 V, I = 7.3 A, T = 125 °C
D j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
-
-
-
-
-
-
1.5 K/W
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
thJC
3.9
62
80
R
thJC_FP
R
thJA
R
thJA_FP
R
thJA
@ min. footprint
-
-
-
-
35
-
62
2
3)
@ 6 cm cooling area
-
260 °C
Soldering temperature, wavesoldering
T
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T =25°C unless otherwise specified
j
Parameter
Symbol
Conditions
Values
Unit
min.
650
-
typ. max.
V
V
=0V, I =0.25mA
-
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =2.5A
730
V
GS
D
(BR)DS
I =350μA, V =V
2.1
3
3.9
Gate threshold voltage
V
I
D
GS DS
GS(th)
V
=600V, V =0V,
μA
Zero gate voltage drain current
DS
GS
DSS
T =25°C
-
-
0.5
-
1
j
T =150°C
100
j
V
V
=20V, V =0V
-
-
100 nA
Gate-source leakage current
I
GS
DS
GSS
=10V, I =4.6A
Drain-source on-state resistance R
Ω
GS
D
DS(on)
T =25°C
-
-
-
0.54
1.46
0.8
0.6
j
T =150°C
-
-
j
R
f=1MHz, open drain
Gate input resistance
G
Page 2
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
Unit
min.
typ. max.
Characteristics
Transconductance
g
V
≥2*I *R
DS(on)max
,
-
6
-
S
fs
DS
D
I =4.6A
D
Input capacitance
C
V
=0V, V =25V,
-
-
-
-
790
260
16
-
-
-
-
pF
iss
GS
DS
f=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
4)
V
V
=0V,
30
Effective output capacitance,
energy related
C
GS
o(er)
=0V to 480V
DS
5)
-
55
-
Effective output capacitance,
time related
C
o(tr)
Turn-on delay time
Rise time
t
V
=380V, V =0/13V,
-
-
-
-
6
3.5
60
7
-
-
ns
d(on)
DD
GS
I =7.3A, R =12Ω,
t
D
G
r
T =125°C
Turn-off delay time
Fall time
t
100
15
j
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=480V, I =7.3A
-
-
-
3
-
-
nC
V
gs
gd
g
DD
D
Gate to drain charge
9.2
21
V
V
=480V, I =7.3A,
27
Gate charge total
DD
D
=0 to 10V
GS
V
=480V, I =7.3A
-
5.5
-
Gate plateau voltage
V(plateau)
DD
D
1
2
Limited only by maximum temperature
Repetitve avalanche causes additional power losses that can be calculated asP =E *f.
AR
AV
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
4
C
C
is a fixed capacitance that gives the same stored energy as C
while V is rising from 0 to 80% V
.
DSS
oss
DS
o(er)
5
is a fixed capacitance that gives the same charging time as C
while V is rising from 0 to 80% V
.
oss
DS
o(tr)
DSS
Page 3
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
-
-
7.3
21.9
1.2
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
pulsed
I
-
-
SM
V
=0V, I =I
F S
-
-
-
-
-
1
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =480V, I =I ,
400
4
600 ns
rr
R
F S
di /dt=100A/μs
Reverse recovery charge
Peak reverse recovery current
Q
-
-
-
μC
A
F
rr
I
28
800
rrm
T =25°C
A/μs
Peak rate of fall of reverse
recovery current
di /dt
j
rr
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPP_I
0.024
0.046
0.085
0.308
0.317
0.112
SPA
0.024
0.046
0.085
0.195
0.45
SPP_I
0.00012
0.0004578 0.0004578
SPA
R
R
R
R
K/W
C
C
C
C
C
C
0.00012
Ws/K
th1
th2
th3
th4
th1
th2
th3
th4
th5
th6
0.000645
0.001867
0.004795
0.045
0.000645
0.001867
0.007558
0.412
Rth5
R
2.511
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Page 4
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
1 Power dissipation
= f (T )
2 Power dissipation FullPAK
P = f (T )
tot
P
tot
C
C
SPP07N65C3
100
W
34
W
28
24
20
16
12
8
80
70
60
50
40
30
20
10
0
4
0
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
°C
°C
T
T
C
C
3 Safe operating area
I = f ( V
4 Safe operating area FullPAK
I = f (V )
)
D
DS
D
DS
parameter : D = 0 , T =25°C
parameter: D = 0, T = 25°C
C
C
10 2
10 2
A
A
10 1
10 1
10 0
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
tp = 0.001 ms
tp = 0.01 ms
10 -1
10 -1
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10 -2
10 0
10 -2
10 1
10 2
10 3
DS
10 0
10 1
10 2
10 3
DS
V
V
V
V
Page 5
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
5 Transient thermal impedance
= f (t )
6 Transient thermal impedance FullPAK
Z
Z
= f (t )
thJC
p
thJC p
parameter: D = t /T
parameter: D = t /t
p
p
10 1
10 1
K/W
K/W
10 0
10 -1
10 -2
10 -3
10 0
10 -1
10 -2
D = 0.5
D = 0.5
D = 0.2
D = 0.2
D = 0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -1
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
s
s
t
t
p
p
7 Typ. output characteristic
I = f (V ); T =25°C
8 Typ. output characteristic
I = f (V ); T =150°C
D
DS
j
D
DS
j
parameter: t = 10 μs, V
parameter: t = 10 μs, V
p
GS
p
GS
13
A
24
20V
20V
8V
10V
A
11
7V
8V
6.5V
6V
10
9
8
7
6
5
4
3
2
1
0
6,5V
16
12
8
5.5V
5V
6V
5,5V
4.5V
4V
5V
4
4,5V
0
0
5
10
15
25
0
2
4
6
8
10 12 14 16 18 20 22
25
V
V
DS
V
V
DS
Page 6
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
9 Typ. drain-source on resistance
=f(I )
10 Drain-source on-state resistance
R
R
= f (T )
DS(on) j
DS(on)
D
parameter: T =150°C, V
parameter : I = 4.6 A, V = 10 V
j
GS
D
GS
SPP07N65C3
10
3.4
4V
Ω
Ω
4.5V
8
2.8
2.4
2
7
5V
6
6V
5
6.5V
8V
1.6
1.2
0.8
0.4
0
5.5V
4
3
2
1
0
20V
98%
typ
°C
0
2
4
6
8
10
12
15
-60
-20
20
60
100
180
A
I
T
D
j
11 Typ. transfer characteristics
12 Typ. gate charge
= f (Q
I = f ( V ); V ≥ 2 x I x R
V
)
Gate
D
GS
DS
D
DS(on)max
GS
parameter: t = 10 μs
parameter: I = 7.3 A pulsed
p
D
SPP07N65C3
24
16
A
V
25°C
20
18
16
14
12
10
8
12
V
0,2
DS max
0,8 VDS max
10
8
150°C
6
6
4
4
2
2
0
0
0
2
4
6
8
10 12 14 16
20
GS
0
4
8
12
16
20
24
28
34
Gate
V
V
nC
Q
Page 7
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
13 Forward characteristics of body diode
I = f (V )
14 Typ. switching time
t = f (I ), inductive load, T =125°C
F
SD
D
j
parameter: T , tp = 10 μs
par.: V =380V, V =0/+13V, R =12Ω
DS GS G
j
10 2
SPP07N65C3
90
ns
A
td(off)
70
60
50
40
30
20
10
0
10 1
10 0
tf
Tj = 25 °C typ
td(on)
tr
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -1
0
0.4
0.8
1.2
1.6
2
2.4
3
0
1
2
3
4
5
6
8
V
A
I
V
D
SD
15 Typ. switching time
t = f (R ), inductive load, T =125°C
16 Typ. drain current slope
di/dt = f(R ), inductive load, T = 125°C
G
j
G
j
par.: V =380V, V =0/+13V, I =7.3 A
par.: V =380V, V =0/+13V, I =7.3A
DS GS D
DS
GS
D
500
3000
ns
A/μs
400
350
300
250
200
150
100
50
2000
1500
1000
500
0
td(off)
di/dt(on)
td(on)
tf
tr
di/dt(off)
20
0
0
20
40
60
80
100
130
0
40
60
80
100
130
Ω
Ω
R
R
G
G
Page 8
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
17 Typ. drain source voltage slope
dv/dt = f(R ), inductive load, T = 125°C
18 Typ. switching losses
E = f (I ), inductive load, T =125°C
G
j
D
j
par.: V =380V, V =0/+13V, I =7.3A
par.: V =380V, V =0/+13V, R =12Ω
DS
GS
D
DS
GS
G
100
0.025
*) E includes SDP06S60
on
diode commutation losses.
V/ns
mWs
80
70
60
50
40
30
20
10
0
0.015
0.01
0.005
0
dv/dt(on)
Eoff
Eon*
dv/dt(off)
20
0
40
60
80
120
0
1
2
3
4
5
6
8
A
Ω
I
R
D
G
19 Typ. switching losses
E = f(R ), inductive load, T =125°C
20 Avalanche SOA
= f (t )
I
G
j
AR
AR
par.: V =380V, V =0/+13V,I =11A
par.: T ≤ 150 °C
DS
GS
D
j
0.2
*) E includes SDP06S60
on
diode commutation losses.
mWs
0.16
0.14
0.12
0.1
Eoff
0.08
0.06
0.04
0.02
0
Eon*
0
20
40
60
80
100
130
Ω
R
G
Page 9
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
21 Avalanche energy
= f (T )
22 Drain-source breakdown voltage
E
V
= f (T )
(BR)DSS j
AS
j
par.: I = 1.5 A, V = 50 V
D
DD
SPP07N65C3
785
V
260
mJ
220
200
180
160
140
120
100
80
745
725
705
685
665
645
625
605
585
60
40
20
0
20
40
60
80
100
120
160
-60
-20
20
60
100
180
°C
°C
T
T
j
j
23 Avalanche power losses
= f (f )
24 Typ. capacitances
C = f (V )
P
AR
DS
parameter: E =0.5mJ
parameter: V =0V, f=1 MHz
AR
GS
10 4
500
pF
W
Ciss
10 3
300
200
100
10 2
Coss
10 1
Crss
10 0
0
10 4
10 5
10 6
0
100
200
300
400
600
DS
MHz
V
V
f
Page 10
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
25 Typ. C
stored energy
oss
E
=f(V )
DS
oss
5.5
μJ
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
100
200
300
400
600
DS
V
V
Definition of diodes switching characteristics
Page 11
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
PG-TO220-3
Page 12
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
PG-TO-220-3 (FullPAK)
Page 13
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
PG-TO262-3, PG-TO262-3 (I²-PAK)
Page 14
Rev. 1.92
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Page 15
Rev. 1.92
2010-12-21
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