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SPI08N50C3 [INFINEON]

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated; 新的革命高电压技术，超低栅极电荷定期额定雪崩

SPI08N50C3


元器件型号：	SPI08N50C3
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 新的革命高电压技术，超低栅极电荷定期额定雪崩晶体栅极晶体管功率场效应晶体管开关脉冲局域网
PDF文件：	总14页 (文件大小：727K)
下载文档：	下载PDF数据表文档文件
型号参数：SPI08N50C3参数

SPI08N50C3HKSA1

Power Field-Effect Transistor, 7.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

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0 INFINEON

SPI08N80C3

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

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32 INFINEON

SPI1000GCM

1000 Watts ATX12V and EPS12V Switching Power Supply

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13 SPI

SPI100N03S2-03

OptiMOS Power-Transistor

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37 INFINEON

SPI100N03S2L-03

OptiMOS Power-Transistor

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22 INFINEON

SPI105

NPN-OUTPUT DC-INPUT OPTOCOUPLER,1-CHANNEL,2.5KV ISOLATION,DIP

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0 ONSEMI

SPI10N10

SIPMOS Power-Transistor

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33 INFINEON

SPI10N10L

SIPMOS Power-Transistor

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18 INFINEON

SPI11N60C3

Cool MOS⑩ Power Transistor

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15 INFINEON

SPI11N60C3

Cool MOS Power Transistor

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23 INFINEON

SPI11N60C3

Cool MOS⑩ Power Transistor

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50 INFINEON

SPI11N60C3

Cool MOS? Power Transistor Feature New revolutionary high voltage technology

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24 INFINEON

SPI11N60C3HKSA1

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

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0 INFINEON

SPI11N60C3XK

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

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0 INFINEON

SPI11N60CFD

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

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11 INFINEON

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