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SPI12N50C3 [INFINEON]

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated; 新的革命高电压技术，超低栅极电荷定期额定雪崩

SPI12N50C3


元器件型号：	SPI12N50C3
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 新的革命高电压技术，超低栅极电荷定期额定雪崩栅极
PDF文件：	总14页 (文件大小：847K)
下载文档：	下载PDF数据表文档文件
型号参数：SPI12N50C3参数

SPI150F4BN

150 Watts FLEX ATX Power Supply

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19 SPI

SPI150FA

150 Watts FLEX ATX Power Supply Remote ON/OFF function

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37 SPI

SPI150TNH

150 Watts TFX Power Supply

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19 SPI

SPI15N60C3

Cool MOS⑩ Power Transistor

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51 INFINEON

SPI15N60CFD

CoolMOSTM Power Transistor Intrinsic fast-recovery body diode

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14 INFINEON

SPI15N60CFDHKSA1

Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

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0 INFINEON

SPI15N65C3

CoolMOSTM Power Transistor Features Extreme dv/dt rated

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13 INFINEON

SPI15N65C3HKSA1

Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

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0 INFINEON

SPI16N50C3

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

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13 INFINEON

SPI16N50C3

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

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22 INFINEON

SPI16N50C3

Cool MOS⑩ Power Transistor

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30 INFINEON

SPI16N50C3HKSA1

Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

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0 INFINEON

SPI180LE

180 Watts Flex ATX Switching Power Supply

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45 SPI

SPI204

IC,PHOTO GAP DETECTOR,1-CHANNEL,GAP-1C

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0 ONSEMI

SPI206-10

IC,PHOTO GAP DETECTOR,1-CHANNEL,GAP-1C

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0 ONSEMI

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