SPN04N60S5_05 [INFINEON]
New revolutionary high voltage technology Worldwide best RDS in SOT 223; 新的革命高电压技术，在全球223 SOT最好的RDS
| 型号： | SPN04N60S5_05 |
| 厂家： | 
Infineon |
| 描述： | New revolutionary high voltage technology Worldwide best RDS in SOT 223 |
| 文件： | 总10页 (文件大小：566K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPN04N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
V
600
0.95
0.8
V
Ω
A
DS
R
DS(on)
I
D
• Worldwide best R
in SOT 223
DS(on)
SOT-223
• Ultra low gate charge
• Extreme dv/dt rated
4
• Ultra low effective capacitances
• Improved transconductance
3
2
1
VPS05163
Type
SPN04N60S5
Package
SOT-223
Ordering Code
Q67040-S4211
Marking
04N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T = 25 °C
0.8
A
T = 70 °C
0.65
A
3
Pulsed drain current, t limited by T
I
D puls
p
jmax
T = 25 °C
A
Gate source voltage
V
V
P
V
±20
30
1.8
GS
GS
tot
Gate source voltage AC (f >1Hz)
Power dissipation, T = 25°C
W
A
°C
Operating and storage temperature
T , T
-55... +150
j
stg
Page 1
Rev. 2.2
2005-02-21
SPN04N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
20
V/ns
V
= 480 V, I = 4.5 A, T = 125 °C
D j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
-
20
-
K/W
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
R
thJS
R
thJA
-
-
110
-
-
70
2
1)
@ 6 cm cooling area
Soldering temperature,
T
-
-
260 °C
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ. max.
V
V
=0V, I =0.25mA 600
-
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =4.5A
GS
-
700
V
D
(BR)DS
I =200µΑ, V =V
3.5
4.5
5.5
Gate threshold voltage
V
GS(th)
D
GS DS
V
=600V, V =0V,
µA
Zero gate voltage drain current
I
DSS
DS
GS
T =25°C,
-
-
0.5
-
1
50
j
T =150°C
j
V
V
=20V, V =0V
-
-
100 nA
Gate-source leakage current
Drain-source on-state resistance R
I
GSS
GS
DS
=10V, I =2.8A,
Ω
DS(on)
GS
D
T =25°C
-
-
-
0.8
2.3
20
0.95
-
-
j
T =150°C
j
R
f=1MHz, open Drain
Gate input resistance
G
Page 2
Rev. 2.2
2005-02-21
SPN04N60S5
Electrical Characteristics , at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Characteristics
Transconductance
g
V
≥2*I *R
DS(on)max
,
-
1
-
S
fs
DS
D
I =0.65A
D
Input capacitance
C
V
=0V, V =25V,
-
-
-
-
600
325
15
pF
-
-
-
-
iss
GS
DS
f=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
2)
V
V
=0V,
GS
Effective output capacitance,
energy related
C
20
pF
ns
o(er)
=0V to 480V
DS
3)
Effective output capacitance,
time related
C
-
35
-
o(tr)
Turn-on delay time
t
V
=350V, V =0/10V,
-
-
-
-
40
20
130
30
-
-
-
-
d(on)
r
DD
GS
I =0.8A, R =18Ω
Rise time
t
t
t
D
G
Turn-off delay time
Fall time
d(off)
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=350V, I =0.8A
-
-
-
4.1
9.2
17
-
-
-
nC
V
gs
gd
g
DD
D
Gate to drain charge
V
V
=350V, I =0.8A,
Gate charge total
DD
D
=0 to 10V
GS
V
=350V, I =0.8A
-
8
-
Gate plateau voltage
V(plateau)
DD
D
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2
Co(er) is a fixed capacitance that gives the same stored energy asCoss while VDS is rising from 0 to 80% VDSS
.
3
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Page 3
Rev. 2.2
2005-02-21
SPN04N60S5
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
-
-
0.8
A
Inverse diode continuous
forward current
I
A
S
Inverse diode direct current,
I
-
-
3
SM
pulsed
V
=0V, I =I
F S
-
-
-
0.85
200
1.2
1.05 V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =350V, I =I ,
-
-
ns
µC
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Q
rr
F
Page 4
Rev. 2.2
2005-02-21
SPN04N60S5
1 Power dissipation
= f (T )
2 Safe operating area
I = f ( V
P
)
DS
tot
A
D
parameter : D = 0 , T =25°C
A
10 1
SPN04N60S5
1.9
W
A
1.6
1.4
1.2
1
10 0
10 -1
0.8
0.6
0.4
0.2
0
tp = 0.001 ms
tp = 0.01 ms
10 -2
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10 -3
0
20
40
60
80 100 120
160
10 0
10 1
10 2
10 3
DS
°C
T
V
V
A
3 Transient thermal impedance
= f (t )
4 Typ. output characteristic
I = f (V ); T =25°C
Z
thJC
p
D
DS
j
parameter: D = t /T
parameter: t = 10 µs, V
p
p
GS
10 2
14
A
K/W
13V
12
11
10
9
10 1
10 0
11V
9V
8
7
6
10 -1
10 -2
10 -3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
5
4
3
single pulse
2
7V
20
1
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
0
4
8
12
16
26
V
s
t
V
p
DS
Page 5
Rev. 2.2
2005-02-21
SPN04N60S5
5 Typ. output characteristic
I = f (V ); T =150°C
6 Typ. drain-source on resistance
=f(I )
R
D
DS
j
DS(on)
D
parameter: t = 10 µs, V
parameter: T =150°C, V
p
GS
j
GS
8
5
20V
mΩ
12V
10V
9.5V
9V
A
8.5V
4
3.5
3
8V
4
2
0
20V
12V
10V
9V
7.5V
7V
2.5
2
8.5V
8V
6.5V
6V
7.5V
7V
1.5
6.5V
6V
1
0
5
10
15
25
0
1
2
3
4
5
6
7
8.5
V
D
I
V
DS
7 Drain-source on-state resistance
= f (T )
8 Typ. transfer characteristics
I = f ( V ); V ≥ 2 x I x R
DS(on)max
R
DS(on)
j
D
GS
DS
D
parameter : I = 0.65 A, V = 10 V
parameter: t = 10 µs
D
GS
p
SPN04N60S5
16
5.5
Ω
A
4.5
4
12
10
8
3.5
3
2.5
2
6
1.5
1
4
98%
typ
2
0.5
0
0
°C
-60
-20
20
60
100
180
0
2
4
6
8
10 12 14 16
20
V
V
T
GS
j
Page 6
Rev. 2.2
2005-02-21
SPN04N60S5
9 Typ. gate charge
= f (Q
10 Forward characteristics of body diode
V
)
I = f (V )
GS
Gate
F SD
parameter: I = 0.8 A pulsed
parameter: T , tp = 10 µs
D
10 1
SPN04N60S5
SPN04N60S5
16
V
A
0.2 VDS max
12
0.8 VDS max
10 0
10
8
6
10 -1
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
2
10 -2
0
nC
0
4
8
12
16
20
28
0
0.4
0.8
1.2
1.6
2
2.4
3
V
Q
V
Gate
SD
11 Drain-source breakdown voltage
= f (T )
12 Typ. capacitances
V
C = f (V )
(BR)DSS
j
DS
parameter: V =0V, f=1 MHz
GS
10 4
pF
SPN04N60S5
720
V
10 3
10 2
10 1
10 0
10 -1
680
660
640
620
600
580
560
540
Ciss
Coss
Crss
-60
-20
20
60
100
180
0
10 20 30 40 50 60 70 80
100
°C
V
T
V
DS
j
Page 7
Rev. 2.2
2005-02-21
SPN04N60S5
13 Typ. C
stored energy
oss
E
=f(V )
oss
DS
3.5
µJ
2.5
2
1.5
1
0.5
0
0
100
200
300
400
600
DS
V
V
Definition of diodes switching characteristics
Page 8
Rev. 2.2
2005-02-21
SPN04N60S5
Page 9
Rev. 2.2
2005-02-21
SPN04N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 10
Rev. 2.2
2005-02-21
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