SPP08N50C3_09 [INFINEON]

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated; 新的革命高电压技术,超低栅极电荷定期额定雪崩
SPP08N50C3_09
型号: SPP08N50C3_09
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
新的革命高电压技术,超低栅极电荷定期额定雪崩

栅极
文件: 总14页 (文件大小:727K)
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75 INFINEON

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Cool MOS⑩ Power Transistor

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104 INFINEON

SPP08N80C3_08

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

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52 INFINEON

SPP08P06P

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SPP08P06P

SIPMOS Power-Transistor

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59 INFINEON

SPP08P06P_09

P-Channel Enhancement mode Avalanche rated dv/dt rated

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19 INFINEON

SPP08P06PG

P-Channel Enhancement mode Avalanche rated dv/dt rated

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21 INFINEON

SPP08P06PH

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

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0 INFINEON

SPP-1

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22 WELWYN

SPP100N03S2-03

OptiMOS Power-Transistor

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34 INFINEON

SPP100N03S2L-03

OptiMOS Power-Transistor

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20 INFINEON

SPP100N04S2-04

OptiMOS Power-Transistor

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18 INFINEON

SPP100N04S2L-03

OptiMOS Power-Transistor

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24 INFINEON

SPP100N06S2-05

OptiMOS Power-Transistor

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27 INFINEON

SPP100N06S2L-05

OptiMOS Power-Transistor

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27 INFINEON